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High-power mid-infrared femtosecond master oscillator power amplifier Er:ZBLAN fiber laser system

Published online by Cambridge University Press:  01 June 2023

Linpeng Yu
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Jinhui Liang
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Qinghui Zeng
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Jiacheng Wang
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Xing Luo
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Jinzhang Wang
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Peiguang Yan
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Fanlong Dong
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Xing Liu
Affiliation:
Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen, China
Qitao Lü
Affiliation:
Han’s Laser Technology Industry Group Co., Ltd., Shenzhen, China
Chunyu Guo*
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
Shuangchen Ruan
Affiliation:
Shenzhen Key Laboratory of Laser Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen, China
*
Correspondence to: Chunyu Guo, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China. E-mail: cyguo@szu.edu.cn

Abstract

High-power femtosecond mid-infrared (MIR) lasers are of vast importance to both fundamental research and applications. We report a high-power femtosecond master oscillator power amplifier laser system consisting of a single-mode Er:ZBLAN fiber mode-locked oscillator and pre-amplifier followed by a large-mode-area Er:ZBLAN fiber main amplifier. The main amplifier is actively cooled and bidirectionally pumped at 976 nm, generating a slope efficiency of 26.9%. Pulses of 8.12 W, 148 fs at 2.8 μm with a repetition rate of 69.65 MHz are achieved. To the best of our knowledge, this is the highest average power ever achieved from a femtosecond MIR laser source. Such a compact ultrafast laser system is promising for a wide range of applications, such as medical surgery and material processing.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (https://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with Chinese Laser Press
Figure 0

Figure 1 Schematic of the laser system. ISO, isolator; GM, gold mirror; LD, laser diode; λ/2, half-wave plate; λ/4, quarter-wave plate; DM, dichroic mirror; L, lens.

Figure 1

Figure 2 Measured output characteristics of the pre-amplifier under a pump power of 10 W. (a) Output spectrum. (b) Autocorrelation trace. (c) RF spectrum with a resolution bandwidth of 10 Hz. (d) Pulse trains in the nanosecond and millisecond time scales.

Figure 2

Figure 3 Average output power and pulse duration of the main amplifier versus pump power.

Figure 3

Figure 4 (a) Output spectra and (b) corresponding autocorrelation traces of the main amplifier at different average output power levels. (c) Linear output spectrum of the main amplifier at an average output power of 8.12 W.

Figure 4

Figure 5 Beam quality measurement of the main amplifier at an average output power of 6.28 W. Inset: the corresponding collimated beam profile.

Figure 5

Figure 6 (a) Measured long-term stability of the main amplifier for 1 hour at an average output power of 6.28 W. Inset: the corresponding pulse train measured in a 20-ms time scale. (b) RF spectrum with a resolution bandwidth of 10 Hz.