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    • Publisher:
      Cambridge University Press
      Publication date:
      05 June 2012
      28 January 2010
      ISBN:
      9780511840685
      9780521514606
      Dimensions:
      (247 x 174 mm)
      Weight & Pages:
      0.86kg, 354 Pages
      Dimensions:
      Weight & Pages:
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    Book description

    Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: Rigorous theoretical treatment combined with practical detail A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation Covers MOSFETS, HBTs and HJFETS Uses the PSP model for MOSFETS Rigorous treatment of device capacitance Describes the operation of modern, high-performance transistors and diodes Evaluates the suitability of various transistor types and diodes for specific modern applications Covers solar cells and LEDs and their potential impact on energy generation and reduction Includes a chapter on nanotransistors to prepare students and professionals for the futureProvides results of detailed numerical simulations to compare with analytical solutions End-of-chapter exercises Online lecture slides for undergraduate and graduate courses

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