Hostname: page-component-77f85d65b8-lfk5g Total loading time: 0 Render date: 2026-03-29T19:52:38.275Z Has data issue: false hasContentIssue false

SG-II-Up prototype final optics assembly: optical damage and clean-gas control

Published online by Cambridge University Press:  04 March 2015

Dongfeng Zhao*
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, No. 390, Qinghe Road, Jiading District, Shanghai 201800, China University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing 100049, China
Li Wan
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, No. 390, Qinghe Road, Jiading District, Shanghai 201800, China
Zunqi Lin
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, No. 390, Qinghe Road, Jiading District, Shanghai 201800, China
Pin Shao
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, No. 390, Qinghe Road, Jiading District, Shanghai 201800, China
Jianqiang Zhu
Affiliation:
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, No. 390, Qinghe Road, Jiading District, Shanghai 201800, China
*
Correspondence to: D. Zhao, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, No. 390, Qinghe Road, Jiading District, Shanghai 201800, China. Email: dfzhao@siom.ac.cn

Abstract

The Shenguang-II Upgrade (SG-II Up) facility is an under-construction high-power laser driver with eight beams, 24 kJ energy, 3 ns pulse duration and ultraviolet laser output, in the Shanghai Institute of Optics and Fine Mechanics, China. The prototype design and experimental research of the prototype final optics assembly (FOA), which is one of the most important parts of the SG-II Up facility, have been completed on the ninth beam of the SG-II facility. Thirty-three shots were fired using 1-${\it\omega}$ energy from 1000 to 4500 J and 3-${\it\omega}$ energy from 500 to 2403 J with a 3 ns square pulse. During the experiments, emphasis was given to the process of optical damage and to the effects of clean-gas control. A numerical model of the FOA generated by the Integrated Computer Engineering and Manufacturing code for Computational Fluid Dynamics (ICEMCFD) demonstrated that a flux within $1{-}5~\text{l s}^{-1}$ and a 180 s period is effectual to avoid contaminant sputtering to the optics. The presence of surface ‘mooning’ damage and surface spots located outside the clear aperture are induced by contaminants such as wire, silica gel and millimeter order fiber and metal.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
The online version of this article is published within an Open Access environment subject to the conditions of the Creative Commons Attribution licence .
Copyright
© The Author(s) 2015
Figure 0

Figure 1. The prototype FOA is composed of fixed interfaces to the target chamber and five modules that house eight full-aperture optics. The clear aperture size is $310~\text{mm}\times 310~\text{mm}$.

Figure 1

Figure 2. Numerical model of the FOA generated by ICEMCFD.

Figure 2

Figure 3. Schematic of the observed cross-section distributions in the prototype FOA.

Figure 3

Figure 4. Density distribution of the contaminants in cross-section 2 as the flux ranges within $1{-}5~\text{l s}^{-1}$ after 30 s.

Figure 4

Figure 5. Distribution of the gas inlets and outlets in the FOA.

Figure 5

Figure 6. Two types of inlet and exhaust pipes.

Figure 6

Figure 7. Graph showing the real-time contaminant quantity.

Figure 7

Figure 8. Surface damage morphologies induced by contaminants: (a) film damage located on the clear aperture brim, (b) surface spot outside the clear aperture, (c) clear aperture brim and (d) surface ‘mooning’ damage outside the clear aperture.

Figure 8

Figure 9. Results obtained by x-ray fluorescence spectrometry: (a) unused silica coated by sol-gel film (including Al, Si, Pd, Cr, Mn, Fe, Cu and Zn) and (b) used silica coated by sol-gel film (including Zn, Al, Si, P, S, K, Ca, Ti, Cr, Mn, Fe, Ni and Cu; because the Pb amount is negligible, it is not labeled).