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Defining the optimal gradient doped $\def \xmlpi #1{}\def \mathsfbi #1{\boldsymbol {\mathsf {#1}}}\let \le =\leqslant \let \leq =\leqslant \let \ge =\geqslant \let \geq =\geqslant \def \Pr {\mathit {Pr}}\def \Fr {\mathit {Fr}}\def \Rey {\mathit {Re}}\mathrm{Yb}^{3+}$:YAG disk for room and low temperature diode pumped solid-state laser operations

Published online by Cambridge University Press:  02 October 2014

J.-C. Chanteloup*
Affiliation:
LULI, Ecole Polytechnique, CNRS, CEA, UPMC, Route de Saclay, 91128 Palaiseau, France
M. Arzakantsyan
Affiliation:
LULI, Ecole Polytechnique, CNRS, CEA, UPMC, Route de Saclay, 91128 Palaiseau, France
S. Marrazzo
Affiliation:
LULI, Ecole Polytechnique, CNRS, CEA, UPMC, Route de Saclay, 91128 Palaiseau, France
*
Correspondence to: J.-C. Chanteloup, Laboratoire LULI, Ecole Polytechnique, Route de Saclay, 91128, Palaiseau CEDEX, France. Email: jean-christophe.chanteloup@polytechnique.edu
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Abstract

We propose a general methodology to define the optimum doping ion volume distribution required for an efficient solid-state laser amplifier. This approach is illustrated in the context of two experimental diode pumped Yb:YAG amplifiers operating at 300 and 160 K. Processing of such tailored gain media is now possible through horizontal direct crystallization.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/3.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
© The Author(s) 2014
Figure 0

Figure 1. (a) The workspace defined by the disk doping ramp over its thickness and the doping mean value. (b) The linear doping equation $d(x)=d_{0}+g_{d}(x-t/2)/t$. The inset shows the 77 mm disk used for the 160 K Lucia active mirror amplifier; it corresponds to the blue circle with coordinates (0, 1) in the workspace; the other circle (0, 2) refers to the 300 K disk. Both positions are qualified as WP.

Figure 1

Figure 2. The thermal evolution of the absorption cross section between 90 and 300 K for an HDC grown homogeneously 1 at.% doped 1 cm thick Yb:YAG crystal. The data in (a) are collected at 940 nm whereas those in (b) correspond to the 1030 nm absorption peak. The red dots refer to data from Fan[7] whereas the green ones refer to data from Brown[8].

Figure 2

Table 1. Absorption and emission cross sections at 300 and 160 K.

Figure 3

Figure 3. Stored energy density map versus doping ramp and mean value. For each specific doping ramp, a minimum average doping value exists below which this doping ramp is not defined; this explains the map’s white triangular area. The iso-energy density $9\ {\rm J}\ {\rm cm}^{-2}$ line above which the requested energetic performance will be reached is drawn.

Figure 4

Figure 4. (a) Maximum gain map versus doping ramp and mean value. The 1.33 ${\rm cm}^{-1}$ threshold iso-gain curve is drawn in solid back. Below this value, ASE triggered parasitic oscillations are expected to be severely limited, guaranteeing a satisfactory efficiency for the amplifier. The iso-energy density $9\ {\rm J}\ {\rm cm}^{-2}$ line is also drawn (dashed line). The bottom right inset gives an enlarged view of the AoI. (b) Small signal gain distribution over the 7 mm thick crystal for the current 2 at.% constant doped crystal (black) and optimum 1.9 at.% average/0.9 at.% doping ramp crystal (red).

Figure 5

Figure 5. (a) Gain contrast $Cg_{0}$ map versus doping ramp and mean value. The red rectangle gives the AoI. The iso-energy density $9\ {\rm J}\ {\rm cm}^{-2}$ line is dashed. The optimum region is white dashed. The Lucia current operating point WP is marked with the blue circle (27%) and the optimum one is marked in yellow (2.4%). (b) The gain profiles for the blue and yellow points.

Figure 6

Figure 6. (a) Stored energy density map versus doping ramp and mean value. (b) Maximum gain map versus doping ramp and mean value. The optimum region (dashed) is defined by an upper boundary: the $1.32\ {\rm cm}^{-1}$ threshold iso-gain curve. Below this value, ASE triggered parasitic oscillations are expected to be severely limited, guaranteeing a satisfactory efficiency for the amplifier. The iso-energy density $3.3\ {\rm J}\ {\rm cm}^{-2}$ line defines the lower boundary. The Lucia low temperature amplifier operating point is marked with the blue circle (0, 1). The yellow circle is located at the lowest gain position along the $3.3\ {\rm J}\ {\rm cm}^{-2}$ energy density line.

Figure 7

Figure 7. (a) Gain contrast $Cg_{0}$ versus doping ramp and mean value. The unity contrast line defines the frontier of doping domains where the minimum gain becomes negative due to strong 1030 nm absorption ($d_{0}> 2.2$ at.%). (b) Gain (bold curves, left scale) and ${\rm Yb}^{3+}$ concentration (dashed lines, right scale) distributions within three 1 cm thick crystals. The respective extreme doping values are given in the inset. The grayed-out bottom area defines the negative gain location.

Figure 8

Table 2. Energetic improvement for the low temperature amplifier.