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Experimental investigation of the stimulated Raman scattering effect in high-power nanosecond superfluorescent fiber source

Published online by Cambridge University Press:  27 September 2023

Chaoyu Ning
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Shuzhen Zou
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Haijuan Yu
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Jiexi Zuo
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xuechun Chen
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Shuang Xu
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Shifei Han
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xinyao Li
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Wenjuan Wu
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Chaojian He
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
Xuechun Lin*
Affiliation:
Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing, China
*
Correspondence to: Xuechun Lin, Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. Email: xclin@semi.ac.cn

Abstract

In this work, we experimentally investigate the dependence of the stimulated Raman scattering (SRS) effect on the seed linewidth of a high-power nanosecond superfluorescent fiber source (ns-SFS). The results reveal that the SRS in the ns-SFS amplifier is significantly influenced by the full width at half maximum (FWHM) of the ns-SFS seed, and there is an optimal FWHM linewidth of 2 nm to achieve the lowest SRS in our case. The first-order SRS power ratio increases rapidly when the seed’s linewidth deviates from the optimal FWHM linewidth. By power scaling the ns-SFS seed with the optimal FWHM linewidth, a narrowband all-fiberized ns-SFS amplifier is achieved with a maximum average power of 602 W, pulse energy of 24.1 mJ and corresponding peak power of 422.5 kW. This is the highest average power and pulse energy achieved for all-fiberized ns-SFS amplifiers to the best of our knowledge.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with Chinese Laser Press
Figure 0

Figure 1 The experimental setup of the ns-SFS seed.

Figure 1

Figure 2 The output characteristics of the ns-SFS seed. The output spectra of the unfiltered ns-SFS (a) and the filtered ns-SFSs (b). (c) The pulse profiles. (d) The fluctuations at the pulse peak of the ns-SFS seed.

Figure 2

Table 1 Output power of the ns-SFS seed versus the FWHM linewidth.

Figure 3

Figure 3 The experimental setup of the ns-SFS amplifier.

Figure 4

Figure 4 The output spectra (a) and the pulse profiles (b) of the ns-SFS signals at an output power of approximately 18 W.

Figure 5

Figure 5 (a) The output power and (b) pulse width of amplified ns-SFS signals as a function of pumping power, (c) the pulse profiles and (d) the details of the pulse peak of amplified ns-SFS signals at a pump power of 370 W.

Figure 6

Figure 6 The SRS of the amplified ns-SFS with various linewidths. (a) The first-order SRS power ratio of seven ns-SFS amplifiers under different pump powers. (b) The output spectra of the ns-SFS amplifiers with a pump power of 370 W. (c) The experimental and fitted output spectra in the case of an 8 nm ns-SFS at a pump power of 370 W in a linear scale; inset, the corresponding spectra in a logarithmic coordinate. (d) The first-order SRS power ratio and the second-order SRS power ratio versus the ns-SFS seed’s FWHM linewidth at a pump power of 370 W.

Figure 7

Figure 7 The dependence of the ASE power ratio and spectral broadening factor on the FWHM linewidth of the ns-SFS seed at a pump power of 370 W.

Figure 8

Figure 8 Output performance of the 2 nm ns-SFS amplifier. (a) Output average power (black line) and pulse width (red line) versus pump power. (b) Pulse profiles at different output powers. (c) Output spectra dependence on the operation power. (d) Beam quality at the maximum output power of 602 W.