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High-energy, alignment-insensitive, injection-seeded Q-switched Ho:yttrium aluminum garnet single-frequency laser

Published online by Cambridge University Press:  04 July 2023

Dong Yan
Affiliation:
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China
Yue Yuan
Affiliation:
Department of Physics and Chemistry, PLA Army Academy of Special Operations, Guangzhou, China
Yunpeng Wang
Affiliation:
Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China
Jiawei Fan
Affiliation:
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China
Jiaze Wu
Affiliation:
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China
Xiaoming Duan
Affiliation:
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China
Sining Li
Affiliation:
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China
Tongyu Dai
Affiliation:
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China
Youlun Ju*
Affiliation:
National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin, China
*
Correspondence to: Youlun Ju, National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China. Email: jylhit@163.com

Abstract

A high-energy, alignment-insensitive, injection-seeded Q-switched Ho:yttrium aluminum garnet (YAG) single-frequency laser is developed. Both the slave Q-switched laser and the seed laser are Ho:YAG ring lasers based on a pair of corner cubic reflectors. The seed laser has an available power of 830 mW at 2096.667 nm. At 100 Hz, the Q-switched Ho:YAG laser provides a single-frequency pulsed output using injection-seeded technology. The 7.3 mJ single-frequency pulse energy from the slave laser has a pulse width of 161.2 ns and is scaled to 33.3 mJ after passing through the Ho:YAG single-pass amplifier. According to the measurement results of the heterodyne beating technique, the single-frequency pulse has a half-width of 4.12 MHz.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (https://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with Chinese Laser Press
Figure 0

Figure 1 Schematic diagram of the single-frequency injection-seeded Ho:YAG laser. The upper left part of the schematic is the transmission path of the oscillating light inside the CCR. Fiber 1–3, 1908 nm fiber lasers; f1–f9, plano-convex lenses (with focal lengths of f1 and f3 being 160 mm, f2, f4 and f5 400 mm, f6 and f7 200 mm, f8 600 mm, f9 240 mm); AOM, acousto-optic modulator; HWP, half-wave plate; CCR1–CCR4, corner cube reflectors; IOS, isolator; F-R, Faraday rotator; S1, S2, splitters; HR is coated with 1.9–2.1 μm high reflection film; thin-film polarizers TFP1–TFP6 are coated with 1.9 μm pump light and 2.1 μm S-polarized high reflection film as well as 2.1 μm P-polarized high transmittance film.

Figure 1

Figure 2 Wavelength and Fabry–Pérot interferometer spectrum of the Ho:YAG seed laser.

Figure 2

Figure 3 Output power of the Ho:YAG seed laser.

Figure 3

Figure 4 The fluctuations of the power and wavelength of the Ho:YAG seed laser.

Figure 4

Table 1 Output power versus CCR1 travel distance.

Figure 5

Figure 5 Effect of angular deviation of the CCR on the output power of seed laser under SLM and Q-switched operation.

Figure 6

Figure 6 Wavelength of the Q-switched Ho:YAG laser.

Figure 7

Figure 7 Effect of angular deviation of the CCR on the output power of the Q-switched slave laser with different cavity lengths.

Figure 8

Figure 8 Effect of travel distance of CCR3 on the output power.

Figure 9

Figure 9 Energy and pulse width of the Q-switched Ho:YAG laser.

Figure 10

Figure 10 The pulse temporal profiles of the Q-switched Ho:YAG laser (a) with injection seeding and (b) without injection seeding.

Figure 11

Figure 11 The build-up time of the Q-switched Ho:YAG laser with and without injection seeding.

Figure 12

Figure 12 Output energy of the Ho:YAG amplifier.

Figure 13

Figure 13 Energy fluctuation of the Ho:YAG amplifier.

Figure 14

Figure 14 Beam quality of the Ho:YAG amplifier.

Figure 15

Figure 15 (a) Beating signal. (b) The FFT spectrum.