Hostname: page-component-77f85d65b8-9nbrm Total loading time: 0 Render date: 2026-03-28T08:20:11.404Z Has data issue: false hasContentIssue false

Multilayer substrate integrated waveguide six-port junctions with embedded resistive films

Published online by Cambridge University Press:  13 November 2024

Bartosz Tegowski*
Affiliation:
Institute of High-Frequency Technology, Hamburg University of Technology, Hamburg, Germany
Alexander Koelpin
Affiliation:
Institute of High-Frequency Technology, Hamburg University of Technology, Hamburg, Germany
*
Corresponding author: Bartosz Tegowski; Email: bartosz.tegowski@tuhh.de
Rights & Permissions [Opens in a new window]

Abstract

This article deals with multilayer substrate integrated waveguide (SIW) six-port junctions with embedded carbon resistive films. SIW six-ports usually employ reactive power dividers, which degrade the amplitude and phase balance when the six-port is terminated with mismatched power detectors. The associated impairments are studied and two SIW six-port junctions with improved isolation and output matching are designed for K-/Ka-band applications to overcome these limitations. The proposed designs differ with respect to the configuration of the output ports making the underlying six-port topology applicable for different layout requirements. Measurements of the fabricated components validate the concept. The six-ports are compact, fully shielded and can be integrated in multilayer printed circuit boards.

Information

Type
Research Paper
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2024. Published by Cambridge University Press in association with The European Microwave Association.
Figure 0

Figure 1. Port configuration of (a) a conventional six-port, (b) the multilayer stacked SIW six-port concept from [8, 15], and (c) its proposed extension.

Figure 1

Figure 2. Block diagram of a six-port junction terminated with power detectors.

Figure 2

Figure 3. (a) IQ-diagram of a six-port with reactive (solid) and ideal (dotted) power dividers for different output reflection coefficients ${\Gamma_{D}={-20}\,\mathrm{dB}}$ (blue line), ${\Gamma_{D}={-10}\,\mathrm{dB}}$ (red line), and ${\Gamma_{D}={-5}\,\mathrm{dB}}$ (yellow line). (b) Amplitude imbalance and (c) inphase offset versus $\Gamma_D$ for a six-port with power dividers exhibiting an output return loss and isolation of x.

Figure 3

Figure 4. Schematic of the six-port junction SP-1. Layers L1 and L3 consist of plain copper.

Figure 4

Figure 5. Schematic of the quadrature power divider with embedded resistive film. Port 1 denotes the input port, port 2 is the upper (layers L3–L2) and port 3 the lower (layers L2–L1) output. Dimensions in mm: {a0a1a2a3a4a5} = {3.04, 2.16, 3.3, 3.06, 4.86, 0.35}, {b0b1b2b3b4} = {0.37, 1.84, 2.72, 2.87, 2.63}, {g0g1g2} = {1.1, 4.19, 1.61}.

Figure 5

Figure 6. Simulation results of the quadrature power divider after three optimization steps: without resistive film (dotted), with inserted resistive film (dash-dotted), after final re-optimization (solid).

Figure 6

Figure 7. Conceptual block diagram of six-port SP-2 with $h_{12} \gt h_{23}$.

Figure 7

Figure 8. Schematic of the output transition. The cutouts in the substrate serve visualization purposes. Dimensions: $w_x={0.27}\,\mathrm{mm}$, $w_y = {4.08}\,\mathrm{mm}$, $l={3.61}\,\mathrm{mm}$, $s={0.41}\,\mathrm{mm}$, $c={3.10}\,\mathrm{mm}$, $h_{12}={0.3}\,\mathrm{mm}$, $h_{23}={0.25}\,\mathrm{mm}$.

Figure 8

Figure 9. Simulation results of the output transition. Port denomination is indicated in Figure 8.

Figure 9

Figure 10. Layer stacks of (a) the quadrature power divider and six-port SP-1, and (b) six-port SP-2.

Figure 10

Figure 11. Photograph of the manufactured quadrature power divider.

Figure 11

Figure 12. Simulation (dashed) and measurement results (solid) of the quadrature power divider.

Figure 12

Figure 13. (a) and (b) Photographs of the manufactured six-port SP-1 after deposition of the carbon resistive films. White circles indicate the L1-L3-vias yet to be drilled and hachures mark areas of layer L2 which will be removed. (c) Cross section at the position indicated in Figure 13(b). (d) and (e) Fabricated six-port SP-1 with transitions and coaxial connectors.

Figure 13

Figure 14. (a) Photographs of the manufactured six-port SP-2 with indicated vias between layers L2 and L3. (b) Layer stack cross section.

Figure 14

Figure 15. Measurement (solid) and simulation (dashed) results of six-port SP-1. (a) Input reflection coefficients and transmission magnitude S21. (b) and (c) Forward transmission magnitudes and (d) their ratio. (e) Phase differences $\Delta\varphi_{i} = \arg{(S_{i1}/S_{i2})}$ relative to $\Delta\varphi_{3}$.

Figure 15

Figure 16. Measured (solid) and simulated (dashed) (a) output reflection coefficients and (b) output-to-output transmission coefficients of six-port SP-1.

Figure 16

Figure 17. Measurement (solid) and simulation (dashed) results of six-port SP-2. (a) Input reflection coefficients and transmission magnitude S21. (b) and (c) Forward transmission magnitudes and (d) their ratio. (e) Phase differences $\Delta\varphi_{i} = \arg{(S_{i1}/S_{i2})}$ relative to $\Delta\varphi_{3}$.

Figure 17

Figure 18. Measured (solid) and simulated (dashed) (a) output reflection coefficients and (b) output-to-output transmission coefficients of six-port SP-2.

Figure 18

Figure 19. (a) and (b) Synthesized IQ-diagrams based on measured scattering parameters of (a) six-port SP-1 and (b) SP-2 for different termination reflection coefficients $\Gamma_{D}$. (c) and (d) Associated amplitude imbalance and IQ-offsets for (c) six-port SP-1 and (d) SP-2.

Figure 19

Table 1. Comparison of SIW six-port junctions