Hostname: page-component-76d6cb85b7-rxvq6 Total loading time: 0 Render date: 2026-07-18T20:09:51.738Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron transport in semiconducting SnO2 : intentional bulk donors and acceptors, the interface, and the surface – CORRIGENDUM

Published online by Cambridge University Press:  06 September 2012

Oliver Bierwagen ,
Takahiro Nagata ,
Mark E. White ,
Min-Ying Tsai  and
James S. Speck

Abstract

An abstract is not available for this content. As you have access to this content, full HTML content is provided on this page. A PDF of this content is also available in through the ‘Save PDF’ action button.

Information

Type
Corrigendum
Information
Journal of Materials Research , Volume 27 , Issue 19 , 14 October 2012 , pp. 2578
Copyright
Copyright © Materials Research Society 2012

doi: 10.1557/jmr.2012.172, Published by Cambridge University Press, 7 June 2012.

In Bierwagen et al.Reference Bierwagen, Nagata, White, Tsai and Speck1, the authors wish to add the following acknowledgement:

This work was supported in part by the National Science Foundation NSF MRSEC and MWN Programs under Award Nos. DMR05-20415 and DMR09-09203. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF-funded NNIN network. O.B. was supported by a grant from the AFOSR Award No. FA9550-08-1-0461.

The authors regret the omission.

References

REFERENCE

Bierwagen, O.Nagata, T.White, M.E.Tsai, M.-Y.Speck, J.S.: Electron transport in semiconducting SnO2 : intentional bulk donors and acceptors, the interface, and the surface. J. Mater. Res. 27(17), 2232–2236 (2012).CrossRefGoogle Scholar