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On the role of heterogeneity in concentrated solid-solution alloys in enhancing their irradiation resistance

Published online by Cambridge University Press:  19 November 2019

Shijun Zhao*
Affiliation:
Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, China, 999077; and Shenzhen Research Institute of City University of Hong Kong, Shenzhen, China, 518057
*
a)Address all correspondence to this author. e-mail: shijzhao@cityu.edu.hk

Abstract

Concentrated solid-solution alloys (CSAs) demonstrate excellent mechanical properties and promising irradiation resistance depending on their compositions. Existing experimental and simulation results indicate that their heterogeneous structures induced by the random arrangement of different elements are one of the most important reasons responsible for their outstanding properties. Nevertheless, the details of this heterogeneity remain unclear. Specifically, which properties induced by heterogeneity are most relevant to their irradiation response? In this work, we scrutinize the role of heterogeneity in CSAs played in damage evolution in different aspects through atomistic simulations, including lattice misfit, thermodynamic mixing, point defect energetics, point defect diffusion, and dislocation properties. Our results reveal that structural parameters, such as lattice misfit and enthalpy of mixing, are generally not suitable to assess their irradiation response under cascade conditions. Instead, atomic-level defect properties are the keys to understand defect evolution in CSAs. Therefore, tuning chemical disorder to tailor defect properties is a possible way to further improve the irradiation performance of CSAs.

Information

Type
Invited Feature Paper
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
Copyright © Materials Research Society 2019
Figure 0

TABLE I: Calculated lattice parameters (in Å) for all considered alloy systems using different potentials. For hcp Co, values of a and c are provided.

Figure 1

TABLE II: Calculated misfit volume parameters for considered alloys.

Figure 2

TABLE III: Calculated mixing energies for considered alloys (eV/atom).

Figure 3

Figure 1: Calculated defect migration energy distributions in considered alloys. The upper half represents results from the Bonny potential, whereas the results in the lower half are obtained from the Zhou potential.

Figure 4

Figure 2: Diffusion coefficients of interstitial and vacancy defects in the considered alloys. The results calculated using the Bonny potential are shown in the left column, whereas those from the Zhou potential are shown in the right.

Figure 5

Figure 3: The ratio of partial diffusion coefficients (${{D_{\rm{X}}^{\rm{*}}} / {D_{{\rm{Ni}}}^{\rm{*}}}}$, where X denotes the other elements in the alloy) in considered alloys. In Ni0.4Fe0.4Cr0.2 (Ni0.333Co0.333Cr0.333), ${{D_{{\rm{Fe}}\left( {{\rm{Co}}} \right)}^{\rm{*}}} / {D_{{\rm{Ni}}}^{\rm{*}}}}$ is presented by blue lines, whereas ${{D_{{\rm{Cr}}}^{\rm{*}}} / {D_{{\rm{Ni}}}^*}}$ is denoted by pink lines. The results from the Bonny potential are provided in the left side, whereas those from the Zhou potential are given in the right.

Figure 6

Figure 4: Distributions of stacking fault energies in considered alloys. The results from the Bonny potential are provided in the left column, whereas those from the Zhou potential are in the right.

Figure 7

Figure 5: Velocities of an edge dislocation in considered alloys as a function of applied stress.

Figure 8

Figure 6: The defect number generated in the accumulated displacement cascade simulations. The upper row is the results from the Bonny potential, whereas the lower is the results from the Zhou potential.

Figure 9

Figure 7: The number of interstitials in large defect clusters as obtained from the Bonny and Zhou potentials.