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A 172 mJ, high-energy picosecond 355 nm ultraviolet laser system at 100 Hz

Published online by Cambridge University Press:  15 November 2024

Jiatong Li
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Jiayu Zhang
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Tiejun Ma
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Yongping Yao
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Runze Liang
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Xue Zhou
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Chunyan Jia
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Shengjun Huang
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Hongkun Nie*
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Bo Yao
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
Jingliang He
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao, China
Baitao Zhang*
Affiliation:
Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao, China
*
Correspondence to: H. Nie and B. Zhang, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China. Emails: hknie@sdu.edu.cn (H. Nie); btzhang@sdu.edu.cn (B. Zhang)
Correspondence to: H. Nie and B. Zhang, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China. Emails: hknie@sdu.edu.cn (H. Nie); btzhang@sdu.edu.cn (B. Zhang)

Abstract

A high-energy picosecond 355 nm ultraviolet (UV) laser operating at 100 Hz was demonstrated. A 352 mJ, 69 ps, 1064 nm laser at 100 Hz was realized firstly by cascaded regenerative, laser diode end-pumped single-pass and side-pumped main amplifiers. The stimulated Raman scattering-based beam shaping technique, thermally induced birefringence compensation and 4f spatial filter-image relaying systems were used to maintain a relatively homogeneous beam intensity distribution during the amplification process. By using lithium triborate crystals for second- and third-harmonic generation (THG), a 172 mJ, approximately 56 ps, 355 nm UV laser was achieved with a THG conversion efficiency of 49%. To the best of our knowledge, it is the highest pulse energy of a picosecond 355 nm UV laser so far. The beam quality factor ${M}^2$ and pulse energy stability were ${M}_x^2$=3.92, ${M}_y^2$=3.71 and root mean square of 1.48%@3 hours. This laser system could play significant roles in applications including photoconductive switch excitation, laser drilling and laser micro-fabrication.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (https://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2024. Published by Cambridge University Press in association with Chinese Laser Press
Figure 0

Figure 1 Schematic setup of the high-energy picosecond 355 nm UV laser system. HWP, half-wave plate; OI, optical isolator; BE, beam expander; TFP, thin-film polarizer; FR, Faraday rotator; QWP, quarter-wave plate; PC, Pockels cell; HR, high-reflection mirror; LD, laser diode; DM, dichroic mirror; VT, vacuum tube; MD, Nd:YAG module; CL, compensating lens; QR, 90° quartz rotator.

Figure 1

Figure 2 (a) Output energies of the master oscillator (MO), regenerative amplifier (RA), single-pass amplifier (SA), first stage of the main amplifier (MA.1), second stage of the main amplifier (MA.2), and third stage of the main amplifier (MA.3). (b) Output beam quality ${M}^2$ from the RA. The inset shows the near-field beam intensity distribution.

Figure 2

Figure 3 Intensity distributions of (a) the flat-top center beam and (b) the saddle-shaped concave center beam after being shaped by the single-pass amplifier. (c) Output laser spectra of the flat-top center beam (blue line) and the saddle-shaped concave center beam (red line) from the single-pass amplifier.

Figure 3

Figure 4 (a) Energy stability of the 1064 nm fundamental laser pulse. (b) Measured beam quality factor ${M}^2$ at an output energy of 352 mJ. The inset shows the near-field beam intensity distribution. (c) Laser spectra of the seed pulses at an output energy of 2 nJ (black line) and the amplified pulses at an output energy of 352 mJ (red line). (d) Temporal profiles of the seed pulses at an output energy of 2 nJ (black line) and the amplified pulses at an output energy of 352 mJ (red line).

Figure 4

Figure 5 (a) Dependence of the 532 nm green laser pulse energy and SHG efficiency on the incident 1064 nm laser pulse energy. (b) Energy stability of the 532 nm green laser pulse. (c) Dependence of the 355 nm UV laser pulse energy and THG efficiency on the incident 1064 nm laser pulse energy. (d) Energy stability of the 355 nm UV laser pulse.

Figure 5

Figure 6 (a) Measured beam quality factor ${M}^2$ of the 355 nm UV laser at a pulse energy of 172 mJ. The inset shows the near-field beam intensity distribution. (b) Measured temporal pulse profile of the 355 nm UV laser.

Figure 6

Table 1 Representative results of the high-energy picosecond 355 nm UV laser.