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Mixing in PCBM/P3HT bilayers, using in situ and ex situ neutron reflectivity

Published online by Cambridge University Press:  06 March 2017

Dyfrig Môn
Affiliation:
College of Engineering, Swansea University, Wales SA1 8EN, UK
Anthony M. Higgins*
Affiliation:
College of Engineering, Swansea University, Wales SA1 8EN, UK
Philipp Gutfreund
Affiliation:
Large Scale Structures, Institut Laue-Langevin, Grenoble 38000, France
David James
Affiliation:
College of Engineering, Swansea University, Wales SA1 8EN, UK
*
a) Address all correspondence to this author. e-mail: a.m.higgins@swansea.ac.uk

Abstract

In situ and ex situ neutron reflectivity is used to characterize annealed regioregular-P3HT/PCBM bilayers. In situ annealing of a 20 nm PCBM/35 nm P3HT bilayer at 170 °C reveals rapid mixing of PCBM and P3HT to produce a polymer-rich layer that contains around 18–20% PCBM. Samples with three different thicknesses of P3HT layer are ex situ annealed at 140 °C. This again reveals migration of PCBM into the P3HT and vice versa, with the polymer-rich layer in the 20 nm PCBM/35 nm P3HT sample containing 19% PCBM. Complete migration of the entire PCBM layer into the P3HT layer is observed for a 20 nm PCBM/80 nm P3HT bilayer. The robustness of fitted model composition profiles, in comparison with real-space imaging of sample surface morphology and previous work on annealed P3HT/PCBM bilayer compositions, is discussed in detail.

Information

Type
Invited Articles
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
Copyright © Materials Research Society 2017
Figure 0

FIG. 1. (a) Reflectivity versus momentum transfer normal to the substrate (q), and fit for an unannealed PCBM (∼20 nm)/P3HT (∼35 nm) bilayer on silicon. (b) The SLD profile corresponding to the best-fit line in (a). Fits were obtained using a bilayer model in which the thickness, SLD and roughness of each layer was allowed to vary.

Figure 1

FIG. 2. Temperature versus in situ annealing time, for a nominal temperature of 170 °C. The dashed line shows the set-point temperature and the continuous line shows the sample surface temperature.

Figure 2

FIG. 3. (a) Neutron reflectivity data and (b) SLD profiles from a PCBM (∼20 nm)/P3HT (∼35 nm) bilayer annealed in situ at 170 °C. Reflectivity curves are offset vertically for clarity. The lines in (a) are bilayer fits to the experimental data. The percentage PCBM in each layer and interface roughness, σ, are shown for the SLD profile after annealing. The measurements before-annealing and after-annealing were performed at 80 °C. The times given in the legend are those at the end of each 30 s time slice.

Figure 3

FIG. 4. Fit parameters for the PCBM (∼20 nm)/P3HT (∼35 nm) sample annealed in situ at 170 °C. The reflectivity curves and SLD profiles for this sample are shown in Fig. 3. The filled circles correspond to fits of the full reflectivity curves before and after annealing the sample. The open squares correspond to fits of the reflectivity collected at a single incident angle during annealing (30 s collection time for each data point). The SLD of the bottom and top layers are shown in (a) and (b) respectively, and the interface roughness between these two layers is shown in (c).

Figure 4

FIG. 5. Neutron reflectivity data and fits for PCBM (20 nm)/P3HT bilayers on silicon, with three different thicknesses of P3HT. (a–c) Neutron reflectivity data and fits. All fits use either a single layer or bilayer model in which the thickness, SLD and roughness of each layer is allowed to vary. The SLD profiles corresponding to the best-fit lines in (a–c) are given in (d–f) respectively. Initial thicknesses of P3HT were approximately 8 nm in (a) and (d), 35 nm in (b) and (e) and 80 nm in (c) and (f). All samples were ex situ annealed at 140 °C (for 60 min for the 8 and 35 nm P3HT bilayers, and for 10 min for the 80 nm P3HT bilayer). A 20 layer fit to the 35 nm P3HT sample is also shown in (e); in this fit the interfacial roughness between all layers is set to zero, and the SLD of all layers is allowed to vary. There is no fixed oxide layer included in this model. There is also no fixed oxide layer included in the single/bilayer fits in (c) and (f). The unannealed SLD profiles in (d), (e) and (f) were calculated from AFM measurements (of the layer thicknesses and the surface roughness) of duplicate PCBM and P3HT single layers, and of the bilayer samples prior to annealing (imaging peripheral areas of the sample that were not irradiated by the neutron beam). The percentages (by volume) of PCBM in each layer and the roughness of the PCBM-rich/P3HT-rich interface, after annealing are given in (e) for the 2 layer fit to this sample. The inset in (c) shows the same data/fits presented in ‘$R_{\rm{q}}^4$’ format.

Figure 5

FIG. 6. Optical microscopy and atomic force microscopy (AFM) images of annealed (20 nm) PCBM/P3HT bilayers. (a) Optical microscopy image of a 35 nm P3HT bilayer annealed at 140 °C for 60 min. (b) AFM image of the sample shown in (a). (c) Line profiles from the image shown in (b). (d) Optical microscopy of an 80 nm P3HT bilayer annealed at 140 °C for 10 min. (e) AFM image of an 80 nm P3HT bilayer annealed at 140 °C for 60 min. (f) A line profile from the image shown in (e). (a–d) were taken from the actual samples measured with neutron reflectivity, while (e) and (f) are from a duplicate of the sample show in (d), but annealed for 60 min, rather than the 10 min (both AFM measurements and optical microscopy images on these two samples look very similar). The rms roughnesses of (b) and (e) are 2.7 and 26 nm respectively. AFM measurements (not shown) on the sample shown in (d) gave an rms roughness of 24 ± 2 nm (averaged over five 40 × 40 μm scans from different parts of the sample). Images (a) and (d) are both of size 100 × 68 μm.

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