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Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide — ERRATUM

Published online by Cambridge University Press:  17 October 2016

Keita Nomoto ,
Sebastian Gutsch ,
Anna V. Ceguerra ,
Andrew Breen ,
Hiroshi Sugimoto ,
Minoru Fujii ,
Ivan Perez-Wurfl ,
Simon P. Ringer  and
Gavin Conibeer

Abstract

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Information

Type
Erratum
Information
MRS Communications , Volume 6 , Issue 4 , December 2016 , pp. 469
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Copyright
Copyright © Materials Research Society 2016 

In Nomoto et al.,Reference Nomoto, Gutsch, Ceguerra, Breen, Sugimoto, Fujii, Perez-Wurfl, Ringer and Conibeer 1 on page 291 the wrong distance units were listed regarding the extraction of the P and B concentration in Si NCs and the oxide region. They were listed as “m,” when they should have been listed as “nm.” The sentence therefore should have read:

“The P and B concentration in Si NCs and the oxide region was extracted from the distance around 0.5 nm and −2.5 nm, respectively.”

The publisher regrets this error.

References

1. Nomoto, K., Gutsch, S., Ceguerra, A.V., Breen, A., Sugimoto, H., Fujii, M., Perez-Wurfl, I., Ringer, S.P., and Conibeer, G.: Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide. MRS Communications 6(3), 287–292 (2016). doi: 10.1557/mrc.2016.37.Google Scholar