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Spontaneous growth of freestanding Ga nanoribbons from Cr2GaC surfaces

Published online by Cambridge University Press:  03 March 2011

Zheng Ming Sun ,
Surojit Gupta ,
Haihui Ye  and
Michel W. Barsoum
Zheng Ming Sun*
Affiliation:
Department of Materials Science and Engineering, Drexel University,Philadelphia, Pennsylvania 19104; and National Institute of AdvancedIndustrial Science and Technology (AIST), Nagoya 463-8560, Japan
Surojit Gupta
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
Haihui Ye
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
Michel W. Barsoum
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
*
a)Address all correspondence to this author. e-mail: z.m.sun@aist.go.jp
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Abstract

Herein we report on the room-temperature spontaneous growth of Ga freestanding nanoribbons from Cr2GaC surfaces. An oxidation-based model is proposed to explain the growth of the nanostructures. The nanoribbons present a unique opportunity to study the behavior of electrons confined to two dimensions. The production of these Ga nanostructures could be the first step in the manufacture of gallium arsenide or nitride devices with enhanced characteristics for photonic, electronic, and catalytic applications.

Keywords

FilmNanoscale

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Type
Articles
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Journal of Materials Research , Volume 20 , Issue 10 , October 2005 , pp. 2618 - 2621
Copyright
Copyright © Materials Research Society 2005

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References

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