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Nanosecond laser conditioning of multilayer dielectric gratings for picosecond–petawatt laser systems

Published online by Cambridge University Press:  25 September 2023

Kun Shuai
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai, China
Yuanan Zhao*
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai, China
Xiaofeng Liu*
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai, China
Xiangkun Lin
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai, China
Zhilin Xia
Affiliation:
School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, China
Keqiang Qiu
Affiliation:
National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
Dawei Li
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai, China
He Gong
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, China
Yan Zhou
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, China
Jian Sun
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai, China
Li Zhou
Affiliation:
National Laboratory on High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, CAS, Shanghai, China
Youen Jiang
Affiliation:
National Laboratory on High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, CAS, Shanghai, China
Yaping Dai
Affiliation:
Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, China
Jianda Shao
Affiliation:
Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences (CAS), Shanghai, China Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai, China Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, China
*
Correspondence to: Yuanan Zhao and Xiaofeng Liu, Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China. Emails: yazhao@siom.ac.cn (Y. Zhao); liuxiaofeng@siom.ac.cn (X. Liu)
Correspondence to: Yuanan Zhao and Xiaofeng Liu, Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China. Emails: yazhao@siom.ac.cn (Y. Zhao); liuxiaofeng@siom.ac.cn (X. Liu)

Abstract

Multilayer dielectric gratings (MLDGs) are crucial for pulse compression in picosecond–petawatt laser systems. Bulged nodular defects, embedded in coating stacks during multilayer deposition, influence the lithographic process and performance of the final MLDG products. In this study, the integration of nanosecond laser conditioning (NLC) into different manufacturing stages of MLDGs was proposed for the first time on multilayer dielectric films (MLDFs) and final grating products to improve laser-induced damage performance. The results suggest that the remaining nodular ejection pits introduced by the two protocols exhibit a high nanosecond laser damage resistance, which remains stable when the irradiated laser fluence is more than twice the nanosecond-laser-induced damage threshold (nanosecond-LIDT) of the unconditioned MLDGs. Furthermore, the picosecond-LIDT of the nodular ejection pit conditioned on the MLDFs was approximately 40% higher than that of the nodular defects, and the loss of the grating structure surrounding the nodular defects was avoided. Therefore, NLC is an effective strategy for improving the laser damage resistance of MLDGs.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (https://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with Chinese Laser Press
Figure 0

Figure 1 Schematic representation of the nanosecond and picosecond laser damage tests performed on three types of MLDG samples: (a) unconditioned MLDG, (b) MLDF conditioning and (c) MLDG conditioning. (d) Schematic of the raster scan damage tests.

Figure 1

Figure 2 OM images of the nodular ejection pits and plasma scalds originating from Protocol 1. (a), (b) Before photoresist spin-coating after MLDF conditioning. (c), (d) After photoresist spin-coating. (e), (f) After MLDG cleaning.

Figure 2

Figure 3 SEM images of the nodular defect and ejection pits at the different MLDG fabrication stages. (a) Typical bulged nodular defect in the MLDF and (b)–(d) morphologies of the nodular ejection pits after the MLDF conditioning, photoresist spin-coating and grating cleaning, respectively.

Figure 3

Table 1 Model parameters used in the calculations.

Figure 4

Figure 4 (a) Typical cross-sectional morphology of a nodular defect in the unconditioned MLDG. (b), (c) SEM images of the typical nodular ejection pits caused by Protocols 1 and 2, respectively. (d)–(f) Simulated $\left|{E}^2\right|$ distributions corresponding to the morphological structures in (a)–(c), respectively.

Figure 5

Figure 5 (a) SEM image of the plasma-scalding region induced by the NLC in Protocol 1; the inset image shows a local magnified view of the nodular ejection pit. (b)−(g) Local magnified SEM images of the positions marked by rectangles (in color) in (a).

Figure 6

Figure 6 (a) SEM image of the plasma-scalding region induced by the NLC in Protocol 2; the inset image indicates the local magnified view of the central nodular ejection pit. (b)−(g) Local magnified SEM images of the positions marked by rectangles (in color) in (a).

Figure 7

Figure 7 (a) LIDT results of the nanosecond laser raster scan; the two thresholds represent the results of two different test samples. (b) Damage density versus laser fluence (only the damage points that appear in the nanosecond laser damage test process are counted as damage).

Figure 8

Figure 8 (a) OM image showing the pristine morphological modifications of the three nodular ejection pits induced by the NLC in Protocol 1. (b)–(f) OM images showing the morphologies of the ejection pit areas irradiated by gradually increasing nanosecond laser fluences; here, the red lines represent the nodular ejection pits on the MLDG.

Figure 9

Figure 9 (a) OM image showing the pristine morphological modifications of a nodular ejection pit induced by the NLC in Protocol 2. (b)–(f) Ejection pit region irradiated by gradually increasing nanosecond laser fluences.

Figure 10

Figure 10 Picosecond-LIDTs of the unconditioned nodule and nodular ejection pits conditioned by Protocols 1 and 2.

Figure 11

Figure 11 Typical morphological characteristics of the different test areas induced during the picosecond laser damage test. (a), (d) Unconditioned nodular defects. (b), (e) Nodular ejection pits caused by Protocol 1. (c), (f) Nodular ejection pits caused by Protocol 2 (where F denotes the incident laser fluence).

Figure 12

Figure 12 (a) OM image showing the pristine morphological modification of a nodular ejection pit in Protocol 1. (b)–(f) OM images showing the morphologies of the ejection pit area irradiated by the gradually increasing picosecond laser fluences.

Figure 13

Figure 13 (a) OM image showing the pristine morphological modification of a nodular ejection pit in Protocol 2. (b)–(f) OM images showing the morphologies of the ejection pit area irradiated by the gradually increasing picosecond laser fluences.