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Molecular beam homoepitaxial growth of MgO(001)

Published online by Cambridge University Press:  03 March 2011

S.A. Chambers ,
T.T. Tran  and
T.A. Hileman
S.A. Chambers
Affiliation:
Molecular Science Research Center, Pacific Northwest Laboratory, Richland, Washington 99352
T.T. Tran
Affiliation:
Molecular Science Research Center, Pacific Northwest Laboratory, Richland, Washington 99352
T.A. Hileman
Affiliation:
Molecular Science Research Center, Pacific Northwest Laboratory, Richland, Washington 99352
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Abstract

We describe homoepitaxial growth and detailed in situ characterization of MgO(001). We have used, for the first time, high-speed Auger electron spectroscopy as a real-time probe of film composition during growth. Excellent short-range and long-range crystallographic order are achieved in films grown to a thickness of several hundred angstroms in the substrate temperature range of 450 °C to 750 °C. Moreover, the films become more laminar as the growth temperature increases, suggesting that MgO grows homoepitaxially by the step-flow growth mechanism at elevated temperature. The surfaces of films grown at 650°and 750 °C are smoother than those obtained by cleaving MgO(001).

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Articles
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Journal of Materials Research , Volume 9 , Issue 11 , November 1994 , pp. 2944 - 2952
Copyright
Copyright © Materials Research Society 1994

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References

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