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High damage threshold liquid crystal binary mask for laser beam shaping

Published online by Cambridge University Press:  11 February 2019

Gang Xia
Affiliation:
Key Laboratory of High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China National Laboratory on High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China University of Chinese Academy of Sciences, Beijing 100049, China
Wei Fan*
Affiliation:
Key Laboratory of High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China National Laboratory on High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Dajie Huang*
Affiliation:
Key Laboratory of High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China National Laboratory on High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
He Cheng
Affiliation:
Key Laboratory of High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China National Laboratory on High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Jiangtao Guo
Affiliation:
Key Laboratory of High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China National Laboratory on High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China University of Chinese Academy of Sciences, Beijing 100049, China
Xiaoqin Wang
Affiliation:
Key Laboratory of High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China National Laboratory on High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China University of Chinese Academy of Sciences, Beijing 100049, China
*
Correspondence to: W. Fan and D. Huang, No. 390 Qinghe Road, Jiading, Shanghai 201800, China. Email: fanweil@siom.ac.cn (W. Fan); hdajie@siom.ac.cn (D. Huang)
Correspondence to: W. Fan and D. Huang, No. 390 Qinghe Road, Jiading, Shanghai 201800, China. Email: fanweil@siom.ac.cn (W. Fan); hdajie@siom.ac.cn (D. Huang)

Abstract

In order to improve the damage threshold and enlarge the aperture of a laser beam shaper, photolithographic patterning technology is adopted to design a new type of liquid crystal binary mask. The inherent conductive metal layer of commercial liquid crystal electro-optical spatial light modulators is replaced by azobenzene-based photoalignment layers patterned by noncontact photolithography. Using the azobenzene-based photoalignment layer, a liquid crystal binary mask for beam shaping is fabricated. In addition, the shaping ability, damage threshold, write/erase flexibility and stability of the liquid crystal binary mask are tested. Using a 1 Hz near-IR (1064 nm) laser, the multiple-shot nanosecond damage threshold of the liquid crystal mask is measured to be higher than $15~\text{J}/\text{cm}^{2}$. The damage threshold of the azobenzene-based photoalignment layer is higher than $50~\text{J}/\text{cm}^{2}$ under the same testing conditions.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
© The Author(s) 2019
Figure 0

Figure 1. (a) Structure of the LC binary mask (1 – anti-reflection coating, 2 – front glass substrate, 3 – anti-reflection coating, 4 – polyimide layer, 5 – LC molecule, 6 – azobenzene group, 7 – photoalignment layer, 8 – anti-reflection coating, 9 – rear glass substrate and 10 – anti-reflection coating) and (b) arrangement of LC molecules in a single pixel of two pixel types (1 – incident light, 2 – polarizer, 3 – P-polarized light, 4 – front glass substrate with coating polyimide, 5 – LC molecule, 6 – rear glass substrate with coating azobenzene, 7 – P-polarized light, 8 – polarizer, 9 – output light and 10 – S-polarized light).

Figure 1

Figure 2. Fabrication process of the LC cell.

Figure 2

Figure 3. Photolithography mask system (1 – light source, 2 – collimating lens, 3 – polarization beam splitter, 4 – LCOS, 5 – imaging system (1:1) and 6 – LC cell).

Figure 3

Figure 4. Designed objective function $y=0.8x^{2}+0.2$. (a) Binary distribution of the mask; the unit pixel is $40~\unicode[STIX]{x03BC}\text{m}$. (b) Spatial distribution of the objective function.

Figure 4

Figure 5. Beam shaping test system (1 – laser source, 2 – single mode fiber, 3 – fiber port, 4 – beam expander ($20\times$), 5 – polarization beam splitter, 6 – LC binary mask, 7 – polarization beam splitter, 8 – plano-convex lens, 9 – mirror, 10 – pinhole, 11 – mirror, 12 – plano-convex lens and 13 – CCD).

Figure 5

Figure 6. Physical LC binary mask. (a) Boundary dimension of the physical LC binary mask. (b) Parabolic pixel distribution is observed in polarized white light. (c) Regional area of the pixel structure examined under a crossed polarizer microscope ($50\times$).

Figure 6

Table 1. Laser damage thresholds of the azobenzene-based photoalignment layers.

Figure 7

Figure 7. Parabolic shaping of the LC binary mask (curve 1 is the designed objective function, curve 2 was tested at the completed mask; curve 3 is the transmission curve of the same tested mask, which has been stored for six months in a conventional storage).

Figure 8

Table 2. Laser damage thresholds of the LC binary mask materials.

Figure 9

Figure 8. Square soft edge diaphragm of the LC binary mask.

Figure 10

Figure 9. Logo picture of ‘SIOM’ (the size of the picture is 8 mm $\times$ 8 mm; (a) designed picture and (b) picture written on the LC cell).

Figure 11

Figure 10. Results of written and erased situation. (a) First lithography. (b) Third lithography on the same LC cell. (c) Fifth lithography on the same LC cell. (d) Sixth lithography on the same LC cell. (e) The LC cell erased by a linearly polarized blue light of 10 mW for 5 minutes after the sixth writing. (f) The LC cell erased at the power of 10 mW for extra 3 hours after (e).