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1 results

  • A study of BGaN back-barriers for AlGaN/GaN HEMTs

  • Jeramy R. Dickerson, Vinod Ravindran, Tarik Moudakir, Simon Gautier, Paul L. Voss, Abdallah Ougazzaden
  • Journal:
    The European Physical Journal - Applied Physics / Volume 60 / Issue 3 / December 2012
    Published online by Cambridge University Press:
    26 November 2012, 30101
    Print publication:
    December 2012

  • We study the use of a BGaN back-barrier layer in the GaN buffer of AlyGa1−yN/GaN highelectron mobility transistors to improve confinement of carriers in the 2D electron gas region. Unlike InGaN back-barrier designs, whose polarization-induced sheet charges form an electrostatic barrier at the backbarrier/ buffer interface, BGaN back-barrier designs create an electrostatic barrier at the channel/backbarrier interface. This can result in carrier confinement to sub-15 nm thickness, even when the channel is 30 nm wide. Although polarization sheet charges due to the BGaN back-barrier form a secondary well at the back-barrier/buffer interface, increasing the thickness of the back-barrier may move the secondary well so that it no longer interacts with the primary channel.