The reactions between bilayered Ni/Pt films and Si (100) substrates induced by thermal annealing and ion mixing were investigated. Thermal annealing of Si/Pt/Ni and Si/Ni/Pt samples led to layer reversal at low temperatures (∼ 300°to 400°C) and the formation of a ternary phase at high temperatures (∼ 700°C). These results are consistent with those reported in the literature. Ion mixing of both types of samples led to silicide formation without layer reversal. This effect is interpreted in terms of a change of moving species from metal (in thermal annealing) to Si (in ion mixing). The mixing efficiency between Pt and Ni is observed to be enhanced when Si is mixed together with these two metals.

Certain aspects of Rapid Thermal Annealing (RTA) are reviewed. Temperatureconsiderations are discussed. The implant disorder removal rate is measured(5eV removal energy for As induced damage). Shallower defect-free junctionsare obtained using RTA. Results of a ”Round Robin”-RTA annealing arepresented, transient enhanced diffusion is not prominent for As. New resultsfor the concentration enhanced diffusion of As are presented. Diffusion fromthe channeling-tai1 region of shallow boron diffusions is noted as alimiting factor for producing shallow p+-junctions. Other issuesare briefly discussed.