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Poly-SiGe stacked gates with Ge content ([Ge])varying between zero and 100% have been fabricated using an industriel single-wafer machine. These poly-SiGe layers were characterised and fully integrated in a 0.18 pm CMOS process. Interdiffusion of Si and Ge upon subsequent annealing of the structure has been observed and studied. This interdiffusion effect was found to be responsible for the discrepancy observed between theoretical and practical values of the Ge workfunction ɸms evaluated from our electrical measurements and from those of different authors. A technique for the limitation of this interdiffusion effect has then been developped and is described.

Direct nitridation of the silicon substrate using gaseous NO at 550–700°C, 10 mbar is studied using physical (SIMS, TEM, XPS) and electrical characterisations. The nitrogen profile can be tailored for the fabrication of thin nitrided oxides as in the case of implanted nitrogen. Degradation of the I(V) characteristics has been evidenced when the nitrogen amount increases.

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Evidence of InterDiffusion Effect In Stacked Polycrystalline Sige/Si Layers For Cmos Gate Application

Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide

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Evidence of InterDiffusion Effect In Stacked Polycrystalline Sige/Si Layers For Cmos Gate Application

Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide