We detected no correlation between standardized antimicrobial administration ratios (SAARs) and healthcare facility-onset Clostridioides difficile infection (HO-CDI) rates in 102 acute-care Veterans Affairs medical centers over 16 months. SAARs may be useful for investigating trends in local antimicrobial use, but no ratio threshold demarcated HO-CDI risk.

The current study assessed whether the proportion of childhood (age 0–9 years) in poverty altered the developmental trajectories (ages 9–24) of multimethodological indicators of psychological well-being. In addition, we tested whether exposure to cumulative risk over time mediated the association between poverty exposure and psychological well-being. Measures of psychological well-being included internalizing and externalizing symptoms, a behavioral index of learned helplessness (task persistence), and chronic physiological stress (allostatic load). Exposure to poverty during childhood predicted the trajectory of each development outcome: individuals with more poverty exposure during childhood showed (a) relatively high levels of internalizing symptoms that diminished more slowly with maturation, (b) relatively high levels of externalizing symptoms that increased faster over time, (c) less task persistence indicative of greater learned helplessness, and (d) higher levels of chronic physiological stress which increased faster over time relative to persons with less childhood poverty exposure. Trajectories of cumulative risk exposure from physical and psychosocial surroundings from 9–24 years accounted for the association between childhood poverty and the growth curves of internalizing and externalizing symptoms but not for learned helplessness or chronic physiological stress. Additional sensitivity analyses indicate that early childhood disadvantage is particularly problematic for each outcome, except for internalizing symptoms which seem sensitive to the combination of early and lifetime poverty exposure. We also explored whether domains of cumulative risk as well as two alternatives, maternal sensitivity or family cohesion, functioned as mediators. Little evidence emerged for any of these alternative mediating constructs.

A substantial amount of research has demonstrated the deleterious effects of chronic stress on memory. However, much less is known about protective factors. In the current study we test the role of maternal responsiveness in buffering the effects of childhood allostatic load on subsequent adolescent working memory. Allostatic load is a marker of cumulative stress on the body that is caused by mobilization of multiple physiological systems in response to chronic environmental demands. Results of the study suggest that allostatic load negatively affects working memory, but that this effect is significantly attenuated in children with responsive mothers.

The use of nanotechnology based materials for chemical sensing has been of great interest since nanocrystalline materials have been shown to offer improved sensor sensitivity, stability, and response time. Several groups are successfully integrating nanostructures such as nanowires into operational sensors. The typical procedure may include random placement (e.g., dispersion, with fine-line patterning techniques used to create functional sensors) or time consuming precise fabrication (e.g., mechanical placement using an atomic force microscope or laser tweezer techniques). Dielectrophoresis has also been utilized, however it can be challenging to achieve good electrical contact of the nanostructures to the underlying electrodes. In this paper we report on a sensor platform that incorporates nanorods in a controlled, efficient, and effective manner. Semiconducting SnO2 nanorods are used as the sensing element for detection of hydrogen (H2) and propylene (C3H6) up to 600oC. Using a novel approach of combining dielectrophoresis with standard microfabrication processing techniques, we have achieved reproducible, time-efficient fabrication of gas sensors with reliable contacts to the SnO2 nanorods used for the detection of gases. The sensor layout is designed to assist in the alignment of the nanorods by selectively enhancing the electric field strength and allowing for the quick production of sensor arrays. The SnO2 nanorods are produced using a thermal evaporation-condensation approach. After growth, nanorods are separated from the resulting material using gravimetric separation. The rods vary in length from 3μm to greater than 10μm, with diameters ranging from 50 to 300nm. Dielectrophoresis is used to align multiple nanorods between electrodes. A second layer of metal is incorporated using standard microfabrication methods immediately after alignment to bury the ends of the rods making contact with the underlying electrodes within another layer of metal. Electrical contact was verified during testing by the response to H2 and C3H6 gases at a range of temperatures. Testing was performed on a stage with temperature control and probes were used for electrical contact. Gas flows into the testing chamber at a flow rate of 4000sccm. Sensor response of normalized current shift, |Igas-Iair|/Iair, was measured at a constant voltage bias. Sensors showed response to both H2 and C3H6. Detection of H2 was achieved at 100oC and response levels improved approximately 12000-fold at 600oC. Detection of C3H6 started at 100oC and improved approximately 10000-fold at 600oC. Detection of at least 200ppm for both gases was achieved at 600oC. Using this novel microfabrication approach, semiconducting SnO2 nanorods integrated into a microsensor platform have been demonstrated and sensing response showed dramatic increases at higher temperatures.

Silicon-incorporated amorphous hydrocarbon (Si-aC:H) films with varying Si contents were deposited onto a Ti interlayer on Si and steel substrates by reactive sputtering in an unbalanced magnetron sputtering system. The objective of this study was to measure and relate the structural, chemical, and mechanical properties of these Si-aC:H films. Transmission electron microscopy revealed that the Si-aC:H phase is amorphous and TiC exists at the Si-aC:H/Ti phase boundary for all compositions. Mechanical properties such as hardness, indentation modulus, and intrinsic stress decreased with increasing Si and H content in the films, for Si/C ≥ 0.04. XPS measurements suggested that this is most likely due to the decreasing presence of a C-C sp3 interlinked network, accompanied by an increase in C-H and Si-H bonds. This conclusion was supported by radial distribution functions obtained using extended electron energy-loss fine structure analysis (EXELFS).