Experimental data are presented showing maximum carbon C6+ ion energies obtained from nm-scaled targets in the relativistic transparent regime for laser intensities between 9 × 1019 and 2 × 1021 W/cm2. When combined with two-dimensional particle-in-cell simulations, these results show a steep linear scaling for carbon ions with the normalized laser amplitude a0 ($a_0 \propto \sqrt ( I)$). The results are in good agreement with a semi-analytic model that allows one to calculate the optimum thickness and the maximum ion energies as functions of a0 and the laser pulse duration τλ for ion acceleration in the relativistic-induced transparency regime. Following our results, ion energies exceeding 100 MeV/amu may be accessible with currently available laser systems.

In 1975 van den Burg and van den Hoofdakker hypothesized that depressed patients might be ‘overaroused.’ This suggestion is consistent not only with their seminal observations on the antidepressant effects of total sleep deprivation in depression, but with the short, fragmented, and shallow sleep of depressed patients, lowered arousal thresholds, hyperactivity of the hypothalamus-pituitary adrenal (HPA) axis, and elevated core body temperature commonly found in some patients during the sleep period.

The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f14 occupancy.

The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.

The present study was designed to determine the susceptibility of domestic animals to an isolate of Taenia solium from Hainan Province, People's Republic of China. A total of 162 cysticerci were recovered from two pigs and 21 from two dogs after experimental inoculation. Cats, goats and a calf were not susceptible to T. solium. Cysticerci were recovered mainly from muscles of the pigs and all were alive. The remainder were in the liver and only one was alive. In the dog, all cysticerci were recovered from the muscles and all were alive.

A series of novel epoxy/clay nanocomposites (EPOCg-x) were prepared with a selected epoxy resin and x wt% of a mechanically ground phosphorus-containing organoclay (POCg). The results of x-ray diffraction (XRD), Fourier transform infrared, and field emission scanning electron microscopy measurements showed that POCg was size-reduced, and its silicate layers were disordered by the grinding process. The results of XRD and transmission electron microscopy of the nanocomposites suggested that the POCg particles were well-dispersed in the epoxy matrix with a combination of intercalation and destruction platelet structures. The as-prepared nanocomposites remained thermally stable above 376 °C. Furthermore, the storage modulus in the glass state, surface hardness, char residue, and limiting oxygen index (LOI) of the as-prepared nanocomposite were all significantly increased with increasing the POCg content. The large increment of LOI, 10 units higher than that of neat epoxy, indicated that an extraordinary enhancement on flame retardancy was obtained from EPOCg-5.

The microstructures of Tl2Ba2Ca1Cu2O8 (Tl-2212) films are very strongly influenced by the processing parameters used to synthesize the superconducting phase and also control the microwave surface resistance values that are of key importance in the application of these materials in high-frequency devices. We report here on detailed studies of how the mesotexture of Tl-2212 films develops during synthesis at 820 and 855 °C. Our key observation is that the microstructure, and hence the superconducting properties, are controlled by the mechanism by which stress is relieved in the films and that apparently perfectly epitaxial films do not have the best microwave performance because in these samples the stress is relieved by macroscopic defects rather than local, low-angle grain misorientations.

The annular dark field (ADF) image contrast of a 0.92% tensile strained GaN0.045As0.955 layer on GaAs substrate was studied with a scanning transmission electron microscope (STEM) as a function of ADF detector inner semi-angles ranging from 28 mrad to 90 mrad. The GaN0.045As0.955 layers were brighter than the surrounding GaAs for the values of ADF detector semiangle up to 65 mrad, and the measured contrast decreased with increasing ADF detector inner semi-angle. For a 37 nm thick specimen, the GaN0.045As0.955 intensity is about 13% higher than that of GaAs in the 28 mrad ADF detector inner semi-angle. Multislice simulations show that the displacement around substitutional N atoms plays an important role in the observed ADF-STEM contrast, while the contribution to the contrast due to misfit strain between GaN0.045As0.955 and GaAs is small.

An as-deposited Al–Cu–Fe–Cr film was annealed in flowing argon to study development of a quasicrystalline approximant microstructure. Sputter profile x-ray photoemission spectroscopy analysis showed oxygen incorporation reached approximately 70 at.% at the surface of the film, declined monotonically, and stabilized at ∼10 at.% at a depth of 160 nm. Synchrotron grazing incidence x-ray scattering was used to probe the structure of the coating at various penetration depths by altering the angle of the incident x-ray beam. An amorphous structure was observed near the termination surface, which coexisted with a compressively strained crystalline aluminum. These phases were the dominant microstructure to a depth of 110 nm. Below 150 nm, the film was primarily O1 decagonal approximant. Cross-section transmission electron microscopy elucidated a columnar growth morphology with associated porosity in the interstices between the columns. The resulting development of the Al–Cu–Fe–Cr decagonal approximant coatings from the precursor is reported.

A new fully three dimensional (3D) ballistic deposition simulator 3D-FILMS has been developed for the modeling of thin film deposition and structure. The simulator may be implemented using the memory resources available to workstations. In order to illustrate the capabilities of 3D-FILMS, we apply it to the growth of engineered porous thin films produced by the technique of GLancing Angle Deposition (GLAD).

Monoclinic ZrO2 and its supported materials Co/Ni/ZrO2 (Co:Ni = 1:1) for catalytic decomposition of N2O have been studied with GC, FTIR, EDAX, XPS, and the evaluation of catalytic activity of the materials. It is found that monoclinic ZrO2 alone has the catalytic effect for N2O decomposition, although higher activities are found for Co/Ni/ZrO2 systems. XPS study shows that only Co exists in the surface region of ZrO2, which is attributed to the formation of NiO–ZrO2 solid solution resulting from an interdiffusion between Ni2+ and ZrO2 matrix. The gas decomposition on Co/Ni/ZrO2 can be described as first order with respect to partial pressure of N2O. Surface reactions on ZrO2 and Co/Ni/ZrO2 will also be addressed.