We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.
We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.
The redistribution of Ni in InP is studied by annealing samples ofInP implanted with 0.9 MeV Ni at 60o angle of ion incidencewith respect to target surface normal as a function of dose (8.5×1012−4.5×1015 cm−2). Ni profiles are measured by secondaryion mass spectrometry (SIMS) and implantation induced damage by Rutherford backscattering spectrometry in channeling (RBS/C) condition. The highest dose sampleis characterised by remarkable Ni accumulation near the surface (at ∼ $0.3R_{\rm np}$ 
) that has not been observed earlier along with two otherdistinct accumulation zones at R np+ $\Delta R_{\rm np}$ 
and $2.2R_{\rm np}$ 
after annealing at 650 °C for 30 min. Here, R np is the normalcomponent of the projected range for oblique angle bombardment.
