Hg1−xCdxTe crystals with x˜0.2 were grown by the traveling heater method (THM), in either the [111]A or [1 1 1]B directions, using oriented CdTe seeds. Twins are sometimes formed during the growth of these crystals. In crystals grown in the [111]A direction the twins, of orientation [5 1 1]B, are constantly growing at the expense of the original [111]A oriented grain. Growth in the [1 1 1]B direction, on the other hand, suppresses the growth of the twin domain. Photodiodes and capacitors realized on the (111)A plane are markedly superior to those on the twin plane, [5 1 1]B. The difference is due to higher fixed charge and larger fast surface state densities in the case of the [5 1 1]B plane. These effects are explained by the lattice structures in the {111} and {511} planes and their possible influence on surface reactivity.

Hg1−xCdxTe crystals with x∼0.2 were grown by the traveling heater method (THM), in either the [111]A or [111]B directions, using oriented CdTe seeds. Twins are sometimes formed during the growth of these crystals. In crystals grown in the [11]A direction the twins, of orientation [511]B, are constantly growing at the expense of the original [111]A oriented grain. Growth in the [111]B direction, on the other hand, suppresses the growth of the twin domain. Photodiodes and capacitors realized on the (111)A plane are markedly superior to those on the twin plane, (511)B. The difference is due to higher fixed charge and larger fast surface state densities in the case of the (511)B plane. These effects are explained by the lattice structures in the {111} and {511} planes and their possible influence on surface reactivity.