In this paper, we propose a wrap around field termination technique for a vertical Schottky barrier diode fabricated on a free standing GaN substrate. Unlike conventional field plate designs, in the wrap around structure the field plate surrounds the active device area. This allows for better control of the electric field distribution, and reduces field-crowding. 2D finite element simulations using ATLAS show a uniform field distribution across the device. Calculations show that the Ron increases relative to the conventional field plate. A break down voltage of 1300V was predicted for a 5um thick epilayer.

We describe a leiomyosarcoma of the tongue in a 60-year-old man. The diagnosis was supported by immunohistochemical positivity for desmin and alpha-1 smooth muscle actin.

There is no single generalization of distributivity to semilattices. This paper investigates the class of mildly distributive semilattices, which lies between the two most commonly discussed classes in this area—weakly distributive semilattices and distributive semilattices. Particular attention is paid to describing and characterizing congruence distributive mildly distributive semilattices, in contrast to distributive semilattices, whose lattice of join partial congruences is badly behaved and which are difficult to describe.