Gallium nitride technology takes advantage of the survivability for low-noise applications, while SiGe and GaAs technologies are recognized for the better noise figure (NF). In this paper, the technique for implementing inductive source degenerated HEMTs in all the stages to have a better NF is combined with a technique of high value gate bias resistor (RGB) to improve survivability. Moreover, this work includes the dependence of the reverse recovery time on different values of RGB with respect to the trap phenomenon and the RC time constant. The designed low-noise amplifier (LNA) achieves an NF better than 1.4 dB for 7.5–11.5 GHz, OIP3 up to 33 dBm, input reflection coefficient better than −8.4 dB, and output reflection coefficient better than −11.1 dB. NF has a minimum of 1.15 dB at 9.9 GHz. The small-signal gain of LNA is better than 15.3 dB in the whole frequency band, and the output power at 1 dB gain compression is 23 dBm at 11.5 GHz. LNA survives an input stress level of up to 39 dBm. The dimensions of the designed LNA MMIC are 2.9 mm × 1.3 mm.
