This article presents germanium telluride (GeTe)-based switches for radiofrequency (RF) applications, capable of reversible switching between their ON and OFF states through optical activation by irradiation. Unlike previous studies, the transition is induced by infrared laser pulses at a wavelength of λ = 915 nm, which is highly promising for future integration of laser sources and the proposal of fully integrated optical activation of phase change material (PCM) switches. This represents a novel approach compared to the existing literature, which primarily focuses on the ultra-violet spectrum, less suitable for on-chip optical integration. Our work also provides combined optical and thermal simulations to elucidate the challenges associated with actuating small PCM switches and demonstrates the effectiveness of PCMs at this wavelength. The study achieves bistable switching at high frequencies up to 40 GHz, with a figure of merit of 31.5 fs, despite the low GeTe conductivity of only 1.85·105 S/m. Additionally, significant advancements over the literature have been made by surpassing 30,000 cycles with optical actuation.