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Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °C

Published online by Cambridge University Press:  31 January 2011

Roy G. Gordon ,
David M. Hoffman  and
Umar Riaz
Roy G. Gordon*
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138
David M. Hoffman*
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138
Umar Riaz
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138
*
a)Address correspondence to these authors.
a)Address correspondence to these authors.
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Abstract

The atmospheric pressure chemical vapor deposition of aluminum nitride coatings using hexakis(dimethylamido)dialuminum, Al2(NMe2)6, and ammonia precursors is reported. The films were characterized by ellipsometry, transmission electron microscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. The films were deposited at 200–250 °C with growth rates up to 1000 Å/min. They displayed good adhesion to silicon, vitreous carbon, and glass substrates and were chemically inert, except to concentrated hydrofluoric acid. Rutherford backscattering analysis showed that the N/Al ratio ranged from 1.1 to 1.2. Refractive indexes were 1.8–1.9. The films were smooth and amorphous by transmission electron microscopy.

Information

Type
Materials Communications
Information
Journal of Materials Research , Volume 6 , Issue 1 , January 1991 , pp. 5 - 7
Copyright
Copyright © Materials Research Society 1991

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