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Separation of film thickness and grain boundary strengthening effects in Al thin films on Si

Published online by Cambridge University Press:  31 January 2011

Ramnath Venkatraman  and
John C. Bravman
Ramnath Venkatraman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
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Abstract

We have measured stress variations with temperature as a function of film thickness and a given grain size in pure Al and Al–0.5% Cu films on Si substrates. The variation in thickness for a given grain size is brought about by using the same film and the repeated controlled growth and dissolution of a barrier anodic oxide which can be grown uniformly on the film. Stress measurements were made as a function of temperature by measuring wafer curvature after successively removing each 0.1 μm of Al film. The components of strengthening due to the film thickness and the presence of grain boundaries were separated by assuming that the flow stress of the film is simply the sum of these two components. It is found that strengthening due to film thickness varies inversely with the thickness, which is consistent with results obtained by us using laser-reflowed films in an earlier work. The Hall–Petch coefficients calculated from the strengthening due to the grain boundaries are slightly higher than those reported for bulk Al. However, it is also recognized that the variation of the flow stress as g−1, where g is the grain size, is more plausible than that predicted by the Hall–Petch relation (i.e., as g−1/2). The variations of these two components with temperature, and under tension and compression, are discussed.

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Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 2040 - 2048
Copyright
Copyright © Materials Research Society 1992

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References

1.Sinha, A. K. and Sheng, T. T., Thin Solid Films 48, 117 (1978).CrossRefGoogle Scholar
2.Hershkovitz, M., Blech, I. A., and Komem, Y., Thin Solid Films 130, 87 (1985).CrossRefGoogle Scholar
3.Koleshko, V. M., Belitsky, V. F., and Kiryushin, I. V., Thin Solid Films 142, 199 (1986).CrossRefGoogle Scholar
4.Flinn, P. A., Gardner, D. S., and Nix, W. D., IEEE Trans. Electron Dev. ED-34, 689 (1987).CrossRefGoogle Scholar
5.Doerner, M. F. and Nix, W. D., in CRC Critical Reviews in Solid State and Materials Sciences (CRC Press, Cleveland, OH, 1988), Vol. 14, p. 225.Google Scholar
6.Brotzen, F. R., Rosemayer, C. T., and Gale, R. J., Thin Solid Films 166, 291 (1988).CrossRefGoogle Scholar
7.Gardner, D. S. and Flinn, P. A., IEEE Trans Electron Dev. 35, 2160 (1988).CrossRefGoogle Scholar
8.Gardner, D. S. and Flinn, P. A., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J. C., Nix, W. D., Barnett, D. M., and Smith, D. A. (Mater. Res. Soc. Symp. Proc. 130, Pittsburgh, PA, 1989), p. 69.Google Scholar
9.Nix, W. D., Metall. Trans. A 20A, 2217 (1989).CrossRefGoogle Scholar
10.Venkatraman, R., Davies, P. W., Flinn, P. A., Fraser, D. B., Bravman, J. C., and Nix, W. D., J. Electron Mater. 19, 1231 (1990).CrossRefGoogle Scholar
11.Venkatraman, R., Chen, S., and Bravman, J. C., J. Vac. Sci. Technol. A 9, 2536 (1991).CrossRefGoogle Scholar
12.Murakami, M., Thin Solid Films 59, 105 (1979).CrossRefGoogle Scholar
13.Chaudhari, P., Philos. Mag. 39, 507 (1979).CrossRefGoogle Scholar
14.Meyers, M. A. and Chawla, K. K., Mechanical Metallurgy (Prentice Hall Inc., Englewood Cliffs, NJ, 1984).Google Scholar
15.Griffin, A. J., Jr., Brotzen, F. R., and Dunn, C. F., Thin Solid Films 150, 237 (1987).CrossRefGoogle Scholar
16.Griffin, A. J., Jr., Brotzen, F. R., and Dunn, C., Scripta Metall. 20, 1271 (1986).CrossRefGoogle Scholar
17.Mullins, W. W. and Shewmon, P. G., Acta Metall. 7, 163 (1959).CrossRefGoogle Scholar
18.Thompson, C. V., in Annual Review of Materials Science (Annual Review Inc., 1990), p. 245.Google Scholar
19.Ross, C. A., Drewery, J. S., Somekh, R. E., and Evetts, J. E., J. Appl. Phys. 66, 2349 (1989).CrossRefGoogle Scholar
20.Young, L., Anodic Oxide Films (Academic Press, New York, 1961), Chap. 16.Google Scholar
21.Schwartz, G. C. and Platter, V., J. Electrochem. Soc. 122, 1508 (1975).CrossRefGoogle Scholar
22.Townsend, P. H., Barnett, D. M., and Brunner, T. A., J. Appl. Phys. 62, 4438 (1987).CrossRefGoogle Scholar
23.Doerner, M. F., Gardner, D. S., and Nix, W. D., J. Mater. Res. 1, 845 (1986).CrossRefGoogle Scholar
24.Dieter, G. E., Mechanical Metallurgy (McGraw-Hill Book Co., New York, 1986).Google Scholar
25.Romig, A. D., Jr., Frear, D. R., and Headley, T. J., in Proceedings of the 47th Annual Meeting of the Electron Microscopy Society of America (1989), p. 216.Google Scholar
26.Frear, D. R., Sanchez, J. E., Romig, A. D., Jr., and Morris, J. W., Jr., Metall. Trans A. 21A, 2449 (1990).CrossRefGoogle Scholar
27.Chute, C. J. and Cohen, J. B., J. Mater. Res. 6, 950 (1991).Google Scholar
28. Private communication with Dr. Nix, W. D., Stanford University.Google Scholar
29.Venkatraman, R., Besser, P. R., Brennan, S., and Bravman, J. C., in Thin Films: Stresses and Mechanical Properties III, edited Nix, W. D., Bravman, J. C., Arzt, E., and Freund, L. B. (Mater. Res. Soc. Symp. Proc. 239, Pittsburgh, PA, 1992).Google Scholar