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Conversion of single crystal Si(100) to SiC film by C2H2

Published online by Cambridge University Press:  31 January 2011

Chien C. Chiu  and
Seshu B. Desu
Chien C. Chiu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
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Abstract

SiC thin films grown from the reaction between acetylene (C2H2) and the Si(100) substrates in a horizontal hot-wall CVD reactor by different procedures were studied using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The growth of the SiC films was observed from the behavior of Si2p peaks and their plasmons. A SiC thin film with a thickness of 35 Å and having a smooth surface morphology was obtained in C2H2 diluted by H2 at 1050 °C for a period of 60 min. Etch pits and hillocks were observed with increasing reaction time at 1050 °C. For the conversion conducted in C2H2, but in the absence of H2, a SiC monolayer with smooth morphology was obtained at 950 °C for 7 min and defects were observed for longer reaction times at this temperature. Defects were also observed for reaction times as short as 10 s at higher reaction temperatures (e.g., 1000 °C). H2 seems to play a key role in suppressing the formation of defects and the reaction between C2H2 and Si substrate. The formation of defects was correlated to the out-diffusion of Si in the carbonization process.

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Articles
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Journal of Materials Research , Volume 8 , Issue 3 , March 1993 , pp. 535 - 544
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1Cheng, T. T., Pirouz, P., and Powell, T. A., in Chemistry and Defects in Semiconductor Heterostructures, edited by Kawabe, M., p. 229.Google Scholar
2Ikoma, K., Yamanaka, M., Yamaguchi, H., and Schichi, Y., J. Electrochem. Soc. 138, 3208 (1991).CrossRefGoogle Scholar
3Addamiano, A. and Sprague, J. A., Appl. Phys. Lett. 44, 525 (1984).CrossRefGoogle Scholar
4Learn, A. J. and Khan, I.H., Thin Solid Films 5, 145 (1970).CrossRefGoogle Scholar
5Mogab, C.J. and Leamy, H.J., J. Appl. Phys. 45, 1075 (1974).CrossRefGoogle Scholar
6Smith, F. W., Surf. Sci. 80, 388 (1979).Google Scholar
7Smith, F. W. and Meyerson, B., Thin Solid Films 60, 227 (1979).CrossRefGoogle Scholar
8Khan, I.H. and Learn, A.J., Appl. Phys. Lett. 15, 410 (1969).CrossRefGoogle Scholar
9Sugii, T., Aoyama, T., and Ito, T., J. Electrochem. Soc. 137, 989 (1990).CrossRefGoogle Scholar
10Haq, K.E. and Khan, I.H., J. Vac. Sci. Technol. 7, 490 (1970).CrossRefGoogle Scholar
11Kusunoki, I., Hiroi, M., Sato, T., Igari, Y., and Tomoda, S., Appl. Surf. Sci. 45, 171 (1990).CrossRefGoogle Scholar
12Kim, H.J., Davis, R.F., Cox, X.B., and Linton, R.W., J. Electrochem. Soc. 134, 2269 (1987).Google Scholar
13Kim, H.J., Kong, H-S., Edmond, J. A., Glass, J.T., and Davis, R.F., in Ceramic Transactions, Vol. 2, Silicon Carbide '87, edited by Cawley, J.D. and Samler, C.E..Google Scholar
14Liaw, P. and Davis, R. F., J. Electrochem. Soc. 132, 642 (1985).CrossRefGoogle Scholar
15Bozso, F. and Yates, J.T. Jr., J. Appl. Phys. 57, 2771 (1985).CrossRefGoogle Scholar
16Taylor, P.A., Bozack, M., Choyke, W.J., and Taylor, J.T. Jr., J. Appl. Phys. 65, 1099 (1989).Google Scholar
17Iwami, M., Hirai, M., Kusaka, M., Yakota, Y., and Matsunami, H., Jpn. J. Appl. Phys. 28, L293 (1989).CrossRefGoogle Scholar
18Meyerson, B. S., Appl. Phys. Lett. 48, 797 (1986).CrossRefGoogle Scholar
19Meyerson, B. S., Ganin, E., Smith, D.A., and Nguyen, T. N., J. Electrochem. Soc. 133, 1232 (1986).CrossRefGoogle Scholar
20Nagasawa, H. and Yamaguchi, Y I., J. Cryst. Growth 115, 612 (1991).CrossRefGoogle Scholar
21Hattori, Y., Suzuki, T., Murata, T., Yabumi, T., Yasuda, K., and Saji, M., J. Cryst. Growth 115, 607 (1991).CrossRefGoogle Scholar
22Bozso, F., Muehlhoff, L., Trenary, M., Choyke, W.J., and Yates, J.T. Jr., J. Vac. Sci. Technol. A2 (3), 1271 (1984).CrossRefGoogle Scholar
23Katayama, Y., Shimada, T., and Usami, K., Phys. Rev. Lett. 46, 1146 (1981).CrossRefGoogle Scholar
24Stinespring, CD. and Wormhoudt, J.C., J. Appl. Phys. 65, 1733 (1989).CrossRefGoogle Scholar
25Katayama, Y., Usami, K., and Shimada, T., Philos. Mag. B43, 283 (1981).Google Scholar
26Newman, R. C. and Wakefield, J., in Solid State Physics in Electronics and Telecommunication, edited by Desirant, M. and Michels, J. L., p. 318.Google Scholar
27Stinespring, C. D. and Lawson, W. F., Surf. Sci. 150, 209 (1985).CrossRefGoogle Scholar
28Hong, J.D. and Davis, R.F., J. Am. Ceram. Soc. 63, 546 (1980).CrossRefGoogle Scholar
29Hong, J.D., Davis, R.F., and Newbury, D.E., J. Mater. Sci. 16, 2485 (1981).CrossRefGoogle Scholar