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Characterization of oxygen and nitrogen rapid thermal annealing processes for ultra-low-k SiCOH films

Published online by Cambridge University Press:  31 January 2011

Sungwoo Lee ,
Donggeun Jung ,
Jaeyoung Yang ,
Jin-hyo Boo ,
Hyoungsub Kim ,
Jaewon Lee  and
Heeyeop Chae
Sungwoo Lee
Affiliation:
Department of Physics, Brain Korea 21 Physics Research Division, Institute of Basic Science, and Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746, Republic of Korea
Donggeun Jung
Affiliation:
Department of Physics, Brain Korea 21 Physics Research Division, Institute of Basic Science, and Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746, Republic of Korea
Jaeyoung Yang
Affiliation:
Advanced Nano-Tech Development Team, Semiconductor Business, Dongbu HiTek Co., Ltd., Eumseong-Gun, Chungbuk 369-852, Republic of Korea
Jin-hyo Boo
Affiliation:
Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Republic of Korea
Hyoungsub Kim
Affiliation:
Department of Materials Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
Jaewon Lee
Affiliation:
Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
Heeyeop Chae*
Affiliation:
Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
*
a)Address all correspondence to this author. e-mail: hchae@skku.edu
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Abstract

Rapid thermal annealing (RTA) processing under N2 and O2 ambient is suggested and characterized in this work for improvement of SiCOH ultra-low-k (k = 2.4) film properties. Low-k film was deposited by plasma-enhanced chemical vapor deposition (PECVD) with decamethylcyclopentasiloxane and cyclohexane precursors. The PECVD films were treated by RTA processing in N2 and O2 environments at 550 °C for 5 min, and k values of 1.85 and 2.15 were achieved in N2 and O2 environments, respectively. Changes in the k value were correlated with the chemical composition of C–Hx and Si–O related groups determined from the Fourier transform infrared (FTIR) analysis. As the treatment temperature was increased from 300 to 550 °C, the signal intensities of both the CHx and Si–CH3 peaks were markedly decreased. The hardness and modulus of the film processed by RTA have been determined as 0.44 and 3.95 GPa, respectively. Hardness and modulus of RTA-treated films were correlated with D-group [O2Si–(CH3)2] and T-group [O3Si–(CH3)] fractions determined from the FTIR Si–CH3 bending peak. The hardness and modulus improvement in this work is attributed to the increase of oxygen content in (O)x–Si–(CH3)y by rearrangement.

Keywords

Dielectric propertiesPlasma-enhanced CVD (PECVD) (deposition)Thin film

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Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 3 , March 2008 , pp. 856 - 861
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Bohr, M.: Interconnect scaling—the real limiter to high performance ULSI in Technical Digest of the International Electron Device Meeting, Washington, DC IEEE Piscataway, NJ 1995 241–244Google Scholar
2Milella, A., Delattre, J.L., Palumbo, F., Fracassi, F., d’Agostino, R.: From low-k to ultralow-k thin-film deposition by organosilicon glow discharges. J. Electrochem. Soc. 153, F106 2006CrossRefGoogle Scholar
3Lee, S., Yang, J., Yeo, S., Lee, J., Lee, J., Jung, D., Boo, J., Kim, H., Chae, C.: Effect of annealing temperature on dielectric constant and bonding structure of low-k SiCOH thin films deposited by plasma enhanced chemical vapor deposition. Jpn. J. Appl. Phys. 46(2), 536 2007CrossRefGoogle Scholar
4Cui, J., Madsen, J.M., Takoudis, C.G.: A thermal processing system for microelectric materials. Meas. Sci. Technol. 15, 2099 2004CrossRefGoogle Scholar
5Yang, J., Lee, S., Park, H., Jung, D., Chae, H.: Characterization of low-dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethylcyclopentasiloxane and cyclohexane as the precursors. J. Vac. Sci. Technol., A 24, 165 2006CrossRefGoogle Scholar
6Wang, L., Ganor, M., Roklin, S.I., Grill, A.: Nanoindentation analysis of mechanical properties of low to ultralow-dielectric constant SiCOH films. J. Mater. Res. 20(8), 2080 2005CrossRefGoogle Scholar
7Kinoshita, K., Nakano, A., Kawahara, J., Kunimi, N., Hayashi, Y.: Vapor phase reactions in polymerization plasma for divinylsiloxane-bis-benzocyclobutene film deposition. J. Vac. Sci. Technol. A. 24, 2192 2006CrossRefGoogle Scholar
8Shioya, Y., Shimoda, H., Maeda, K., Ohdaira, T., Suzuki, R., Seino, Y.: Low-k SiOCH film deposited by plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and water vapor. Jpn. J. Appl. Phys. 44, 3879 2005CrossRefGoogle Scholar
9Chang, C.Y., Sze, S.M.: ULSI Technology McGraw-Hill Companies Inc., New York 1996 145Google Scholar
10Shieh, J.M., Chang, S.C., Dai, B.T., Feng, M.S.: Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization. Jpn. J. Appl. Phys. 41, 5104 2002CrossRefGoogle Scholar
11Grill, A., Neumayer, D.: Structure of low-dielectric constant to extreme low-dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization. J. Appl. Phys. 94, 6697 2003CrossRefGoogle Scholar
12Burkey, D.D., Gleason, K.K.: Temperature-resolved Fourier transform infrared study of condensation reactions and porogen decomposition in hybrid organosilicon–porogen films. J. Vac. Sci. Technol., A 22, 61 2004CrossRefGoogle Scholar
13Yang, J., Shim, C., Jung, D.: Effects of post-deposition in-situ heat treatment on the properties of low-dielectric constant plasma polymer films deposited using decahydronaphthalene and tetraethyl orthosilicate as the precursors. J. Mater. Res. 17(6), 1248 2002CrossRefGoogle Scholar
14Han, L.M., Pan, J.S., Chen, S.M., Balasubramanian, N., Shi, J., Wong, L.S., Foo, P.D.: Characterization of carbon-doped SiO2 low k thin films: Preparation by plasma-enhanced chemical vapor deposition from tetramethylsilane. J. Electrochem. Soc. 148, F148 2001CrossRefGoogle Scholar
15Lin, Y., Tsui, T.Y., Vlassak, J.J.: Octamethylcyclotetrasiloxane-based, low-permittivity organosilicate coatings. J. Electrochem. Soc. 153, F144 2006CrossRefGoogle Scholar
16Ross, A.D., Gleason, K.K.: Effects of condensation reactions on the structural, mechanical, and electrical properties of plasma-deposited organosilicon thin films from octamethylcyclotetrasiloxane. J. Appl. Phys. 97, 113707 2005CrossRefGoogle Scholar