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P-type CuInSe2 thin films prepared by selenization of one-step electrodeposited precursors

Published online by Cambridge University Press:  31 January 2011

Lei Wan ,
Yongsheng Cao  and
Deliang Wang
Deliang Wang*
Affiliation:
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
*
a) Address all correspondence to this author. e-mail: eedewang@ustc.edu.cn
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Abstract

In this study, p-type CuInSe2 (CIS) films were prepared by selenization of one-step electrodeposited Cu-In-2Se (atomic ratio) precursors. To obtain high-quality, dense, and homogeneous CIS films for solar cell application, the effects of substrate temperatures during selenization and precursor compositions on the final microstructures were systematically investigated. The precursor layers evolved in very different ways under different selenization conditions. The final microstructures and phases of the films depended critically on the precursor compositions, selenization temperature, and the selenization thermal process history. Low melting temperature CuxSe phase, which tended to segregate at the film surface, can efficiently assist the CIS grain growth. Large hexagonal CuSe platelets were formed at a temperature as low as 170 °C in Cu-rich precursor, which acted as an element-transport flux agent at higher temperature under high Se vapor and reacted with In-Se selenide to form CIS at temperatures above 500 °C. Good crystalline quality chalcopyrite CIS film was obtained at a selenization temperature of 550 °C.

Keywords

AnnealingElectrodepositionMicrostructure

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Articles
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Journal of Materials Research , Volume 24 , Issue 7 , July 2009 , pp. 2293 - 2300
Copyright
Copyright © Materials Research Society 2009

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