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Crystalline silicon thin films: A promising approach for photovoltaics?

Published online by Cambridge University Press:  31 January 2011

A. Slaoui ,
R. Monna ,
J. Poortmans ,
T. Vermeulen ,
O. Evrard ,
K. Said  and
J. Nijs
A. Slaoui
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), 23 rue du Loess, F-67037 Strasbourg cedex, France
R. Monna
Affiliation:
Laboratoire PHASE (UPR 292 CNRS), 23 rue du Loess, F-67037 Strasbourg cedex, France
J. Poortmans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
T. Vermeulen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
O. Evrard
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Said
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Nijs
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

In this paper we review the achievements in the field of silicon crystalline thin film solar cells and correlate these with the different types of growth techniques and substrates. As a starting point we discuss the characteristics of photovoltaic devices based on the use of highly doped monocrystalline substrates as mechanical carriers for the thin films. These films are epitaxially deposited from the gas (CVD) or liquid phase (LPE). The comparison of both techniques is extended to growth on defective silicon substrates, i.e., multicrystalline wafers or silicon ribbons. The intrinsic grain boundary recombination activity in the thin films is assessed as a function of the deposition technique. Bulk passivation by hydrogenation considerably improves the recombination properties. The optimization of the hydrogen passivation conditions is looked at in conjunction with the used surface passivation process. This review is completed with the approaches to realize thin film cells on nonsilicon substrates, including recrystallization in solid and liquid phases.

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Journal of Materials Research , Volume 13 , Issue 10 , October 1998 , pp. 2763 - 2774
Copyright
Copyright © Materials Research Society 1998

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