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Wet oxidation kinetics of AlAs at elevated temperatures

Published online by Cambridge University Press:  31 January 2011

Sun-Chien Ko ,
Sanboh Lee ,
Hai-Lin Wang  and
Y. T. Chou
Sun-Chien Ko
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Sanboh Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Hai-Lin Wang
Affiliation:
Advanced Technology Research Laboratory, Telecommunication Laboratories, Chunghwa Telecom Company, Taoyuan, Taiwan, Republic of China
Y. T. Chou
Affiliation:
Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697
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Abstract

Wet oxidation in the AlAs layer sandwiched between two GaAs plates was investigated for the temperature range of 400 to 480 °C. The oxidation rate increased with increasing thickness of the AlAs layer. Theoretical analysis based on the boundary layer diffusion was performed to account for the thickness effect. The theory is in excellent agreement with the experimental measurement.

Information

Type
Rapid Communications
Information
Journal of Materials Research , Volume 18 , Issue 5 , May 2003 , pp. 1027 - 1030
Copyright
Copyright © Materials Research Society 2003

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References

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