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Origins of microplasticity in low-load scratching of silicon

Published online by Cambridge University Press:  03 March 2011

J.C. Morris  and
D.L. Callahan
J.C. Morris
Affiliation:
Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77251
D.L. Callahan
Affiliation:
Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77251
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Abstract

Microstructural characterization of silicon wafers subjected to controlled low-load scratching with a sharp indenter reveals that considerable plastic deformation occurs prior to the onset of fracture. In particular, a completely ductile response to scratching is observed at or below a Vickers load of 1 g, corresponding to penetration depths of 200 nm or less. This anomalous plasticity arises primarily as a result of a pressure-induced semiconductor-to-metal phase transition (Mott transition). Various levels of subsurface dislocation activity and cracking also contribute to the deformation. The relationships among the phase transformation, dislocation activity, and the onset of fracture are discussed. These findings can be applied to other areas of contact damage demonstrating anomalous plasticity, such as hardness testing and ductile-regime turning.

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Articles
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Journal of Materials Research , Volume 9 , Issue 11 , November 1994 , pp. 2907 - 2913
Copyright
Copyright © Materials Research Society 1994

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