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Crystal growth and structural analysis of perovskite chalcogenide BaZrS3 and Ruddlesden–Popper phase Ba3Zr2S7

Published online by Cambridge University Press:  28 November 2019

Shanyuan Niu
Affiliation:
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, USA
Boyang Zhao
Affiliation:
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, USA
Kevin Ye
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Elisabeth Bianco
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, Ohio 45433, USA
Jieyang Zhou
Affiliation:
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, USA
Michael E. McConney
Affiliation:
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, Ohio 45433, USA
Charles Settens
Affiliation:
Materials Research Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Ralf Haiges
Affiliation:
Loker Hydrocarbon Research Institute and Department of Chemistry, University of Southern California, Los Angeles, California 90089, USA
Rafael Jaramillo
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Jayakanth Ravichandran*
Affiliation:
Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, USA; and Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA
*
a)Address all correspondence to this author. e-mail: jayakanr@usc.edu
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Abstract

Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High-quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS3 and its Ruddlesden–Popper phase Ba3Zr2S7 by a flux method. X-ray diffraction analyses showed the space group of Pnma with lattice constants of a = 7.056(3) Å, b = 9.962(4) Å, and c = 6.996(3) Å for BaZrS3 and P42/mnm with a = 7.071(2) Å, b = 7.071(2) Å, and c = 25.418(5) Å for Ba3Zr2S7. Rocking curves with full width at half maximum of 0.011° for BaZrS3 and 0.027° for Ba3Zr2S7 were observed. Pole figure analysis, scanning transmission electron microscopy images, and electron diffraction patterns also establish the high quality of the grown crystals. The octahedral tilting in the corner-sharing octahedral network is analyzed by extracting the torsion angles.

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Type
Invited Paper
Copyright
Copyright © Materials Research Society 2019 

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