Book contents
- Frontmatter
- Dedication
- Contents
- Preface
- Acknowledgments
- Disclaimer
- 1 Introduction
- 2 Electrostatic Discharge Characterization Methods
- 3 Process Technology Impact
- 4 Design of Electrostatic Discharge Protection Devices
- 5 High-Current Electrostatic Discharge Behavior
- 6 Advanced Input/Output Electrostatic Design
- 7 Ultra-Large-Scale Integration CMOS Technologies
- 8 Electrostatic Discharge Basics of Aluminum Gallium Nitride/Gallium Nitride High-Electron Mobility Transistors
- 9 Basics of 1D/2D Materials, Thin Film Transistors and Their Electrostatic Discharge Failures
- 10 Challenges in Novel Packaging Technologies
- Glossary
- Index
- References
10 - Challenges in Novel Packaging Technologies
Published online by Cambridge University Press: aN Invalid Date NaN
Book contents
- Frontmatter
- Dedication
- Contents
- Preface
- Acknowledgments
- Disclaimer
- 1 Introduction
- 2 Electrostatic Discharge Characterization Methods
- 3 Process Technology Impact
- 4 Design of Electrostatic Discharge Protection Devices
- 5 High-Current Electrostatic Discharge Behavior
- 6 Advanced Input/Output Electrostatic Design
- 7 Ultra-Large-Scale Integration CMOS Technologies
- 8 Electrostatic Discharge Basics of Aluminum Gallium Nitride/Gallium Nitride High-Electron Mobility Transistors
- 9 Basics of 1D/2D Materials, Thin Film Transistors and Their Electrostatic Discharge Failures
- 10 Challenges in Novel Packaging Technologies
- Glossary
- Index
- References
Summary
This chapter explores the electrostatic discharge (ESD) challenges arising from emerging heterogeneous packaging technologies, including 2.5D and 3D integration schemes. It highlights the increasing density and complexity of die-to-die interfaces, hybrid bonding, and microbump-based interconnects, emphasizing their vulnerability to ESD during both manufacturing and operation. The reduced size and capacitance of these interfaces necessitate lower charge device model (CDM) target levels, prompting revised protection strategies and verification methodologies. Techniques such as dual-diode protection, the use of interposer-integrated passive and active ESD elements, and the application of polymer nanocomposites are discussed for robust ESD mitigation. The chapter also examines ESD risks during assembly processes like chip-on-wafer and wafer-on-wafer bonding, recommending specific design and equipment modifications for charge control. Ultimately, the content provides a holistic view of adapting ESD protection in advanced packaging systems to ensure device reliability and performance.
Keywords
Information
- Type
- Chapter
- Information
- High Current ESDPhysics and Design, pp. 367 - 380Publisher: Cambridge University PressPrint publication year: 2026
References
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