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  • Publisher:
    Cambridge University Press
    ISBN:
    9781316105375
    9781107089051
    DOI:
    https://doi.org/10.1017/9781316105375
    Dimensions:
    (244 x 170 mm)
    Weight & Pages:
    00kg, 412 Pages
    Dimensions:
    Weight & Pages:
    • Subjects:
    Engineering, Electronic, Optoelectronic Devices, and Nanotechnology, Circuits and Systems
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    Subjects:
    Engineering, Electronic, Optoelectronic Devices, and Nanotechnology, Circuits and Systems
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    Book description

    Covering a wide spectrum of semiconductor technologies, this book offers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), fin field-effect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin film transistor (TFT) technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability.

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