Book contents
- Frontmatter
- Dedication
- Contents
- Preface
- Acknowledgments
- Disclaimer
- 1 Introduction
- 2 Electrostatic Discharge Characterization Methods
- 3 Process Technology Impact
- 4 Design of Electrostatic Discharge Protection Devices
- 5 High-Current Electrostatic Discharge Behavior
- 6 Advanced Input/Output Electrostatic Design
- 7 Ultra-Large-Scale Integration CMOS Technologies
- 8 Electrostatic Discharge Basics of Aluminum Gallium Nitride/Gallium Nitride High-Electron Mobility Transistors
- 9 Basics of 1D/2D Materials, Thin Film Transistors and Their Electrostatic Discharge Failures
- 10 Challenges in Novel Packaging Technologies
- Glossary
- Index
- References
1 - Introduction
Published online by Cambridge University Press: aN Invalid Date NaN
Book contents
- Frontmatter
- Dedication
- Contents
- Preface
- Acknowledgments
- Disclaimer
- 1 Introduction
- 2 Electrostatic Discharge Characterization Methods
- 3 Process Technology Impact
- 4 Design of Electrostatic Discharge Protection Devices
- 5 High-Current Electrostatic Discharge Behavior
- 6 Advanced Input/Output Electrostatic Design
- 7 Ultra-Large-Scale Integration CMOS Technologies
- 8 Electrostatic Discharge Basics of Aluminum Gallium Nitride/Gallium Nitride High-Electron Mobility Transistors
- 9 Basics of 1D/2D Materials, Thin Film Transistors and Their Electrostatic Discharge Failures
- 10 Challenges in Novel Packaging Technologies
- Glossary
- Index
- References
Summary
Chapter 1 introduces the fundamentals of electrostatic discharge (ESD), focusing on its significance, mechanisms, and impact on microelectronic devices. It begins by illustrating common sources of electrostatic charge generation, such as triboelectric charging and induction, and describes how these charges can accumulate on materials and human bodies. The chapter elaborates on the mechanisms of discharge and their consequences on sensitive semiconductor devices, including dielectric breakdown and junction damage. It also discusses key ESD models like the human body model (HBM), machine model (MM), and charged device model (CDM), which help replicate real-world ESD events for testing. Emphasis is placed on understanding ESD from a physical and system-level perspective, setting the groundwork for subsequent chapters that delve into ESD protection and design strategies. The chapter aims to bridge theoretical understanding with practical implications, making it essential for professionals involved in IC design, testing, and reliability.
Keywords
Electrostatic Discharge (ESD)Electrical Overstress (EOS)Human Body Model (HBM)Charged Device Model (CDM)Integrated Circuit (IC) ReliabilitySemiconductor ManufacturingESD ProtectionFin-Type Field Effect Transistor (FinFET)Oxide BreakdownLatch-upInternational Electrotechnical Commission (IEC) 61000-4-2Advanced CMOSSystem-Level ESD.
Information
- Type
- Chapter
- Information
- High Current ESDPhysics and Design, pp. 1 - 31Publisher: Cambridge University PressPrint publication year: 2026
References
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