Book contents
- Frontmatter
- Dedication
- Contents
- Preface
- Acknowledgments
- Disclaimer
- 1 Introduction
- 2 Electrostatic Discharge Characterization Methods
- 3 Process Technology Impact
- 4 Design of Electrostatic Discharge Protection Devices
- 5 High-Current Electrostatic Discharge Behavior
- 6 Advanced Input/Output Electrostatic Design
- 7 Ultra-Large-Scale Integration CMOS Technologies
- 8 Electrostatic Discharge Basics of Aluminum Gallium Nitride/Gallium Nitride High-Electron Mobility Transistors
- 9 Basics of 1D/2D Materials, Thin Film Transistors and Their Electrostatic Discharge Failures
- 10 Challenges in Novel Packaging Technologies
- Glossary
- Index
- References
2 - Electrostatic Discharge Characterization Methods
Published online by Cambridge University Press: aN Invalid Date NaN
Book contents
- Frontmatter
- Dedication
- Contents
- Preface
- Acknowledgments
- Disclaimer
- 1 Introduction
- 2 Electrostatic Discharge Characterization Methods
- 3 Process Technology Impact
- 4 Design of Electrostatic Discharge Protection Devices
- 5 High-Current Electrostatic Discharge Behavior
- 6 Advanced Input/Output Electrostatic Design
- 7 Ultra-Large-Scale Integration CMOS Technologies
- 8 Electrostatic Discharge Basics of Aluminum Gallium Nitride/Gallium Nitride High-Electron Mobility Transistors
- 9 Basics of 1D/2D Materials, Thin Film Transistors and Their Electrostatic Discharge Failures
- 10 Challenges in Novel Packaging Technologies
- Glossary
- Index
- References
Summary
This chapter presents a comprehensive overview of electrostatic discharge (ESD) characterization methodologies essential for robust integrated circuit (IC) protection design. It begins by detailing standard ESD test models – human body model (HBM), charged device model (CDM),, and machine model (MM) – emphasizing their circuit representations, waveform characteristics, and relevance to real-world failure mechanisms. The influence of IC package types on CDM performance is analyzed, highlighting the need for accurate modeling and simulation. The chapter then discusses electrical overstress (EOS),, system-level ESD standards like International Electrotechnical Commission (IEC) 61000-4-2 and International Organization for Standards (ISO) 10605, and discharge events including cable discharge event (CDE) and charged board event (CBE). A variety of diagnostic tools such as transmission line pulse (TLP), very fast TLP (VfTLP), capacitively coupled TLP (CCTLP), and human metal model (HMM) are reviewed for their role in characterizing ESD robustness. It explores the evolution of test methods, the relevance of failure analysis, and the industry’s push toward revised ESD qualification standards. The chapter in the end emphasizes on the system efficient ESD Design (SEED) as a viable strategy for addressing the demands of advanced technologies and high-speed system interfaces.
Keywords
Electrostatic Discharge (ESD)Human Body Model (HBM)Charged Device Model (CDM)Electrical Overstress (EOS)Machine Model (MM)Transmission Line Pulse (TLP)Very Fast TLP (VfTLP)Capacitively Coupled TLP (CCTLP)Human Metal Model (HMM)International Electrotechnical Commission (IEC) 61000-4-2International Organization for Standards (ISO) 10605ESD Failure AnalysisSystem Efficient ESD Design (SEED)Semiconductor ReliabilityAdvanced Integrated Circuit (IC) Packaging.
Information
- Type
- Chapter
- Information
- High Current ESDPhysics and Design, pp. 32 - 59Publisher: Cambridge University PressPrint publication year: 2026
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