Thin-films of magnetic nanoparticles (MNPs) with high coercivities are deposited onto surfaces for use in data storage applications. This usually requires specialist clean-room facilities, sputtering equipment and high temperatures to achieve the correct crystallographic phases. One possible cheaper and more environmentally friendly alternative could be to use biomolecules. Many biomineralization and biotemplating molecules have been identified that are able to template a wide range of technologically relevant materials using mild, aqueous chemistry under physiological reaction conditions. Here, we have designed a dual affinity peptide (DAP) sequence to template MNPs onto a surface. One end of the DAP has a high binding affinity for SiO2 and the other for MNPs of the L10 phase of CoPt, a high coercivity magnetic material. Images of the biomineralized substrates show that nanoparticles of CoPt are localized onto the areas that were functionalized with the biotemplating DAP. Magnetic force microscopy (MFM) plots of the biotemplated nanoparticles show that there is magnetic contrast on the patterned surface.

Silicon carbide has long been a promising material for semiconductor applications in high-temperature environments. Although silicon carbide radiation detectors were demonstrated more than a half century ago, the unavailability of high-quality materials and device manufacturing techniques hindered further development until about twenty years ago. In the late twentieth century, the development of advanced SiC crystal growth and epitaxial chemical vapor deposition methods spurred rapid development of silicon carbide charged particle, X-ray and neutron detectors. The history and status of silicon carbide radiation detectors as well as the influence of materials and device packaging limitations on future detector development will be discussed. Specific silicon carbide materials development needs will be identified.

Thin-film silicon solar cells have been attracted a lot of intention as low-cost solar cells. One of the most important technologies for improving their performances is light trapping. We have demonstrated the high potential of double-textured zinc oxide (ZnO) thin films used as front transparent conductive oxide (TCO) films due to further enhancement of their light-trapping effects. Although the laser scribing method has already been well established for low-cost thin-film silicon solar cell module manufacturing, laser scribing technique on double-textured ZnO is new and still a challenging issue. In this study, we firstly demonstrated the availability of laser scribing for amorphous silicon (a-Si) solar cells fabricated on double-textured ZnO substrates. It is general to utilize lasers with wavelength of 1.06 μm and 532 nm for scribing of TCO and silicon layer, respectively. Here we attempted to scribe both of TCO and silicon layers using a 532 nm wavelength laser (green laser) for process simplifying.

In this work, we numerically investigated the achievable fidelities when controlling an effective three-qubit system consisting of a NV- color center in diamond with a nearby strongly coupled 13C nuclear spin by means of microwave- and radio-frequency pulses in the experimentally attractive low magnetic field regime. We find that gates with straightforward square driving pulses do not achieve the fidelity currently required for the fault-tolerant quantum computing models.

We report on mid-infrared (600 – 4000 cm-1), refection-type optical-Hall effect measurements on epitaxial graphene grown on C-face silicon carbide and present Landau-level transition features detected at 1.5 K as a function of magnetic field up to 8 Tesla. The Landau-level transitions are detected in reflection configuration at oblique incidence for wavenumbers below, across and above the silicon carbide reststrahlen range. Small Landau-level transition features are enhanced across the silicon carbide reststrahlen range due to surface-guided wave coupling with the electronic Landau-level transitions in the graphene layer. We analyze the spectral and magnetic-field dependencies of the coupled resonances, and compare our findings with previously reported Landau-level transitions measured in transmission configuration [4,5,6]. Additional features resemble transitions previously assigned to bilayer inclusion [21], as well as graphite [15]. We discuss a model description to account for the electromagnetic polarizability of the graphene layers, and which is sufficient for quantitative model calculation of the optical-Hall effect data.

Power consumption and dissipation during electrical operation lead to a temperature rise in the package. Elevated temperature in the package structure induces thermo-mechanical stresses which may increase reliability risks. Robust and reliable package design for power systems requires comprehensive analysis of system electrical, thermal, and mechanical behavior. This paper presents a self-consistent approach for package reliability analysis with coupled electro-thermal and thermo-mechanical modeling using TCAD tools.

Accumulated body [1] approach to mitigate the effects of line edge roughness on bulk silicon finFETs and tri-gate FETs is analyzed through 3D TCAD simulations. A side-gate surrounding the body portion of the FET is used to accumulate the body with majority carriers. This approach is predicted to reduce device-to-device variability due to line edge roughness by stronger accumulation of the body in the wider sections of the channel and confinement of the channel away from the edges.

This research presents a new fabrication method for tailoring polymer/carbon nanotubes (CNTs) nanostructures with controlled architecture and composition. The CNTs are finely dispersed in a polymeric latex i.e. polyacrylate, via ultrasonication, followed by a microfiltration process. The later step allows preserving the homogeneous dispersion structure in the resulting solid nanocomposite. The combination of microfiltration and proper choice of the polymer latex allows for the design of complex nanostructures with tunable properties e.g., porosity, mechanical properties. An important attribute of this methodology is the ability to tailor any desired composition of polymer-CNTs systems, i.e., nanotubes content can practically vary anywhere between 0 to 100 wt%. Thus, for the first time a given polymer/CNTs system is studied over the entire CNTs composition, resembling immiscible binary polymer blends. The polymer in these systems exhibits a structural transition from a continuous matrix (nanocomposite) to segregated domains dispersed within a porous CNTs network. An analogy of this structural transition to phase inversion phenomena in immiscible polymer blends is suggested.

With general lighting applications being responsible for over 20% of the energy consumption in the United States, advances in solid-state lighting have the potential for considerable energy and cost savings. The United States Department of Energy predicts that the increased use of solid state lighting will result in a 46% lighting consumption energy savings by the year 2030. Smart lighting systems have the potential for reducing energy costs while also providing a means for short distance data transmission via free space optics. The group III-nitride (III-N) family of materials, including aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), their binary and ternary alloys, are uniquely situated to provide light emitting diodes (LEDs) across the full visible spectrum, photodetectors (PDs) and high power, high speed transistors. In this work, aluminum gallium nitride (AlGaN) / GaN high electron mobility transistors (HEMTs) and indium gallium nitride (InGaN) photodiodes (PDs) are fabricated and characterized. HEMTs and LEDs (or PDs) are grown on the same substrate for the purpose of creating electronic and optoelectronic integrated circuits.

In this study, synthesis and characterization of rutile-Titanium dioxide (TiO2) thin films using pulsed DC Magnetron Sputtering at room temperature, along with the fabrication and characterization of MIM capacitors have been discussed. XPS and RBS data show that the films are stoichiometric and have compositional uniformity. The influence of electrode materials on electrical characteristics of the fabricated MIM capacitors has been studied. The Al/TiO2/Al based capacitors show low capacitance density (9 fF/μm2) with low dielectric constant (K=25) and high EOT (3.67 nm) due to low dielectric constant TiO2 phase formation on Al/Si substrate. On the other hand, Ru/TiO2/Ru based capacitors show high capacitance density (49 fF/μm2) with high dielectric constant (K=130) and low EOT (0.7nm) values at high frequency (100 KHz) due to high dielectric constant phase (rutile) formation of TiO2, on Ru/Si substrate. Raman spectra confirm that the films deposited on Ru/Si substrate show the rutile phase.

In this study, we fabricated blue OLEDs with quantum well structure (QWS) using four different blue emissive materials such as DPVBi, ADN and DPASN, and BAlq as QWS material. Conventional QWS blue OLEDs used to be composed of emissive layer and charge blocking layer with lower HOMO-LUMO energy level, but we designed triple emitting layer for more significant hole-electron recombination in EML and a wider region of exciton generation as forming QWS spontaneously. The structure of triple emitting layered blue OLED is ITO / NPB(700 Å) / X(100 Å) / BAlq(100 Å) /X (100 Å) / Bphen(300 Å) / Liq(20 Å) / Al(1200 Å) (X= DPVBi, ADN, DPASN). HOMO-LUMO energy levels of DPVBi, ADN, DPASN and BAlq were 2.8-5.9, 2.6-5.6, 2.3-5.2 and 2.9-5.9 eV, respectively. The maximum luminous efficiency was 5.32 cd/A at 3.5 V in a blue OLED with DPASN / BAlq / DPASN QWS.

Hydrothermal synthesis of ThO2, UxTh1-xO2, and UOx at temperatures between 670°C and 700°C has been demonstrated. Synthesis at these temperatures is 50-80°C below prior growth studies and represents a new lower bound of successful growth. ThO2 single crystals of dimensions 6.49mm x 4.89mm x 3.89 mm and weighing 0.633g have been synthesized at average growth rates near 0.125mm/week. Single crystal UxTh1-xO2 crystals with mole fractions up to x≈0.30 have also been grown. The largest alloyed crystal with mole fraction x≈0.23 has dimensions of 2.97mm x 3.23mm x ∼3mm and recorded average growth rates near 0.2mm/week. Four structures were solved from X-ray diffraction data and their crystallographic data reported here. Rocking curve analysis determined a dislocation density of 1.2×109 cm-2.

The effect of thermal annealing on the optical properties of Al2O3 films with different Si content was investigated by the photoluminescence method. Si-rich Al2O3 films were prepared by RF magnetron co-sputtering of the silicon and alumina targets on long quarts glass substrates. Photoluminescence (PL) spectra of freshly prepared Si-rich Al2O3 films are characterized by three PL bands with the peak positions at 2.97-3.00, 2.25-2.29 and 1.50 eV. The thermal annealing of the films at 1150 °C during 30 min stimulates the formation of Si nanocrystals (NCs) in the film area with Si content exceeded 60%. After the thermal annealing the PL intensity of all mentioned PL bands decreases and the new PL band appears with the peak position at 1.67 eV. The new PL band is attributed to the photo currier recombination inside of Si NCs. The size of NCs estimated from the PL peak position 1.67 eV of Si NC emission is about ∼-4.5-5.0 nm.

The temperature dependences of PL spectra of Si-rich Al2O3 films have been studied in the range of 10-300K with the aim to reveal the mechanism of recombination transitions for mentioned above PL bands 2.97-3.00, 2.25-2.29 and 1.50 eV in freshly prepared films. The thermal activation of PL intensity and permanent PL peak positions in the temperature range 10-300K permit to assign these PL bands to defect related emission in Al2O3 matrix.

Nanocomposites of polysaccharide matrices, chitosan-starch and carboxymethyl cellulose-starch reinforced with graphene oxide and graphene grafted with keratin were developed. Composites films had been prepared for the casting/solvent evaporation method. The nanocomposites of chitosan/starch matrix improved substantially their mechanical properties with respect to the film without reinforcing, obtaining an increase of 929 % in the storage modulus (E’ 35°C) with only 0.5 wt% of graphene oxide and outstanding increments in E’ at 150°C and 200°C when keratin grafted graphene oxide is incorporated (0.1 wt%). In contrast, the graphene oxide incorporated into the carboxymethyl cellulose-starch matrix tends to decrease the stiffness of the film behaving in opposite way to nanocomposite of chitosan/starch matrix.

The thermoelectric properties of W-substituted CaMn1-xWxO3-δ (x = 0.01, 0.03; 0.05) samples, prepared by soft chemistry, were investigated from 300 K to 1000 K and compared to Nb-substituted CaMn0.98Nb0.02O3-δ. All compositions exhibit both an increase in absolute Seebeck coefficient and electrical resistivity with temperature. Moreover, compared to the Nb-substituted sample, the thermal conductivity of the W-substituted samples was strongly reduced. This reduction is attributed to the nearly two times greater mass of tungsten. Consequently, a ZT of 0.19 was found in CaMn0.97W0.03O3-δ at 1000 K, which was larger than ZT exhibited by the 2% Nb-doped sample.

Magnetic cobalt ferrite nanoparticles provide a pathway towards nanocomposites, due to the ability to fabricate particle-matrix thin films in the submicron range. In this work flexible particulate 0-3 type thin-films, composed of magnetic CoFe2O4 particles (8-18 nm) and ferroelectric poly(vinylidene fluoride-co-hexafluoropropene) (P(VDF-HFP)) polymer, have been fabricated via multiple spin-coating. The thickness of the thin-films was controlled in the range of 500 nm to 1.2 μm, with magnetic particles dispersively embedded in the polymer matrix. Structural information was analyzed by TEM, XRD, HRTEM and SEM. The dielectric and magnetic properties of the cobalt ferrite/copolymer thin films are systematically investigated. The nanocomposite thin films exhibit composition-dependent effective permittivity and loss tangent, as well as temperature and composition-dependent specific saturation magnetization (Ms). The coercivity (Hc) was not affected by the composite’s composition. These films have great potential in smart magnetic devices and biomagnetic applications.

Mesoporous silicas are highly potential materials for applications in the nuclear field like separation, recycling or nuclear wastes confinement. In this work, the effects of the radiation damage on the mesoporous network were investigated by XRR (X-Rays Reflectivity) and nitrogen adsorption isotherm on respectively mesoporous organized thin films (SBA) and disordered bulk mesoporous materials (Vycor glass). The article attempts to answer the question of the existence of a relationship between the rigidity of the mesoporous silica network, and the behavior of silica materials under irradiation.

Pentacene-based ferroelectric gate transistors with croconic acid (CrA) thin film was fabricated for the first time. The memory window (MW) of 1.9 V was obtained from the capacitance-voltage (C-V) characteristics of Al/CrA(50 nm)/SiO2/Si(100) metal-ferroelectric-insulator-semiconductor (MFIS) diode, where the deposition temperature of CrA was room temperature (RT). Butterfly type C-V characteristics was observed for Al/CrA(50 nm)/Al/SiO2/ Si(100) metal-ferroelectric-metal (MFM) diode. Furthermore, a pentacene-based p-type organic field-effect transistor (OFET) with CrA gate insulator was fabricated, and clockwise hysteresis loop was observed in ID-VG characteristic, which is attributed to the ferroelectric properties of CrA gate insulator.

Zinc oxide (ZnO) nanoparticles and nanoparticles of luminescent zinc oxide (ZnO:Zn) phosphor were successfully synthesised and well characterised. A transparent polystyrene composite sheet containing ZnO:Zn nanoparticles was prepared by a solvent casting method. The sheet manifested comparable transmission to a virgin polystyrene film due to very uniform dispersion of the ZnO:Zn nanoparticles into the polystyrene. Evidence for uniform dispersion was evident in both its luminescent properties and in a SEM image. The photoluminescent characteristics of the ZnO:Zn, both as a pure powder and embedded in a polystyrene matrix, are reported. The uniformity of the photoluminescence of the composite sheet under near ultraviolet excitation is demonstrated. The luminescent ZnO:Zn nanoparticles are shown to have applications for use not only as an inhibitor of the ultraviolet degradation of polymers, but also for providing polymers with light emitting functionality.