A photo-oxidized thin film, which transformed the organic silicone oil into inorganic glass, was coated on optical materials surface by using Xe2 excimer lamp at room temperature. This technique has enabled an optical thin coating capable of transmitting ultraviolet rays [UV] of wavelengths under 200 nm and possessing the characteristics of hardness, strain-free, resistance to high power laser, and resistance to water. UV and IR spectroscopic analysis was carried out for investigation of the oxidized silicone oil. The results revealed that the absorption peak of the CH3 group at 2900 cm-1 decreased as the irradiation time of the excimer lamp increased, and the transmittance of the light in the 172 nm wavelengths conversely became high. The UV transmittance of the silicone oil was 29.2 % before the lamp irradiation; and it improved to 90.6 % after the irradiation for 120 minutes. Moreover, in order to evaluate for resistance to laser damage [J/cm2/10 ns], the films were further irradiated with the Nd: YAG laser of ω [1.06 μm] or 2ω [0.503 μm]. The silica glass substrate had almost same laser tolerance in ω and 2ω, 112 J/cm2 and 113 J/cm2, respectively. The laser damage threshold of the photo-oxidized 100 nm thick film formed on the fused silica substrate was 72 J/cm2 in ω and 107 J/cm2 in 2ω.

Capacitive CMOS MEMS sensors are usually defined by anisotropic dry etching processes (RIE and DRIE). These processes can provide clean and vertical sidewall geometry. However, during the dry-etching processes, charges are added to the gate electrodes of the on-chip MOSFET’s through metal pads and micro-structures, and the voltage may be raised to the level of breaking down the gate oxide, which leads to large leakage current and fails the circuit. On another hand, the thin spring beams in capacitive CMOS MEMS accelerometers suffer from in-plane curling and out-of-plane curling caused by stress gradient. Furthermore, the stress in the layers of MEMS structure is a function of temperature. Therefore, the in-plane curling and out-of-plane curling vary with temperature, leading to varying electrode coupling area in the sensing beams. This in turn causes variation in the sensitivity and the DC offset of sensors, meaning that usually the thermal stability of CMOS MEMS capacitive accelerometers is very poor. To cope with these problems, this work develops a new wafer-level post-CMOS process for fabricating thermally stable capacitive accelerometers. The resultant MEMS structures have high aspect ratio (e.g. 2-2.5 μm gaps versus 57 μm depth) and are insensitive to residual stress as well as temperature change. Excellent thermal stability was achieved intrinsically by making the crystalline Si layer in the sensors thick. Moreover, this process totally avoids the charge damage problem during the dry-etching procedure. For demonstration, an accelerometer sensor was fabricated by using the proposed process and was integrated with an on-chip sensing circuit in commercial 0.35 μm 2P4M CMOS process. High detection sensitivity of 595 mV/g and very low thermal variation of 1.68 mg/°C were successfully achieved.

A top-down approach using classical thermodynamics is presented in this paper to deduce size and shape dependencies of different material properties. Particular attention is focused on the thermal expansion coefficient. The theory developed here can also be used to deduce information on surface energies.

An efficient synthetic route for the synthesis of carcerands derived from tetramethylchlorocavitands and its tetraesters derivative were synthesized. A large-scale preparation was achieved in good yield. These carcerands are in bridging unit between oxygen atoms, i.e. contains a 3,5 dihydroxybencyl alcohol units. 1H, and 13C NMR in solution, FTIR, UV-vis spectroscopy, MS-FAB+ spectrometry and elemental analysis confirmed the structure of this carcerands.

We have investigated, using density functional simulations, the energetics and the electronic properties of oxides of selected transition metals, TMs, adsorbed onto a dia-mond (001) surface. We find that stoichiometric oxides of TMs, particularly Ti and Zn,influence the electron affinity of diamond strongly. The electron affinities of stoichiomet-ric oxides of Ti and Zn are calculated to be around −3 eV, significantly higher than 1.9 eV of commonly used H–termination. The reactions of TMs with an oxygenated diamond are found to be highly exothermic. Based upon the energetics and the electronic properties, we propose that in the regime of ultra thin films, oxides of TMs are promising options for surface coating of diamond–based electron emitters, as these coatings are compatible with semiconductor device fabrication processes, while having the benefit of inducing a large negative electron affinity.

Payload and high-tech are important characteristics when the goals are aerospace applications. The development of the technologies associated to these applications has interests that transcend national boundaries and are of strategic importance to the nations. Ultra lightweight mirrors, supports and structures for optical systems are important part of this subject. This paper reports the development of SiC substrates, obtained by pressing, to be applied on embedded precision reflective optics. Different SiC granulometries, having YAG as sintering additive, were processed by: ball milling, drying and deagglomeration, sift, uniaxial and isostatic pressing, and, finally, argon atmosphere sintering at 1900°C. Different porosities were obtained according to the amount of organic material added. Into one side of the samples pellets of organic material were introduced to generate voids to reduce the weight of samples as a whole. The substrates were grinding and polished, looking for a SiC surface having low porosity, as porosity is directly related to light scattering that should be avoided on optical surfaces. Laser surface treatments were applied (using or not SiC barbotine) as a method to improve the surface quality. The samples were characterized by optical and laser confocal microscopy, roughness measurements and mechanical tests. The results are very promissory for future applications.

We report the novel use of semiconductor photocatalysis for the deposition of metal onto insulating surfaces and the in-process formation of nano-structured porosity within this metal. In the process of Photocatalytically Initiated Electroless Deposition (PIED) we have developed a controllable, spatially selective and versatile metallisation technique with several advantages over traditional, non-photocatalytic techniques such as enhanced controllability and purity of the deposit as well as reduced operational costs and environmental impact. With the addition of a self-assembled, hexagonally close-packed microparticle template to the substrate prior to metal deposition, PIED can be used to fabricate thin metal films with highly ordered porosity on the nano-scale. Nanoporous metallisation in this way is able to produce substrates with potentially wide applications such as membrane and separation technology, energy storage and sensors – especially surface enhanced resonance Raman spectroscopy (SERRS).

Further miniaturization of magnetic and electronic devices demands thin films of advanced nanomaterials with unique properties. Spinel ferrites have been studied extensively owing to their interesting magnetic and electrical properties coupled with stability against oxidation. Being an important ferrospinel, zinc ferrite has wide applications in the biological (MRI) and electronics (RF-CMOS) arenas. The performance of an oxide like ZnFe2O4 depends on stoichiometry (defect structure), and technological applications require thin films of high density, low porosity and controlled microstructure, which depend on the preparation process. While there are many methods for the synthesis of polycrystalline ZnFe2O4 powder, few methods exist for the deposition of its thin films, where prolonged processing at elevated temperature is not required. We report a novel, microwave-assisted, low temperature (<100°C) deposition process that is conducted in the liquid medium, developed for obtaining high quality, polycrystalline ZnFe2O4 thin films on technologically important substrates like Si(100). An environment-friendly solvent (ethanol) and non-hazardous oxide precursors (β-diketonates of Zn and Fe in 1:2 molar ratio), forming a solution together, is subjected to irradiation in a domestic microwave oven (2.45 GHz) for a few minutes, leading to reactions which result in the deposition of ZnFe2O4 films on Si (100) substrates suspended in the solution. Selected surfactants added to the reactant solution in optimum concentration can be used to control film microstructure. The nominal temperature of the irradiated solution, i.e., film deposition temperature, seldom exceeds 100°C, thus sharply lowering the thermal budget. Surface roughness and uniformity of large area depositions (50x50 mm2) are controlled by tweaking the concentration of the mother solution. Thickness of the films thus grown on Si (100) within 5 min of microwave irradiation can be as high as several microns. The present process, not requiring a vacuum system, carries a very low thermal budget and, together with a proper choice of solvents, is compatible with CMOS integration. This novel solution-based process for depositing highly resistive, adherent, smooth ferrimagnetic films on Si (100) is promising to RF engineers for the fabrication of passive circuit components. It is readily extended to a wide variety of functional oxide films.

The emission from a light emitting diode (LED) that is emitted under the metal electrode cannot escape into free space. A current blocking layer (CBL) is used to address this issue by forcing the current to flow laterally under the electrode reducing the emission absorbed and hence increasing the overall efficiency of the LED. In this paper a new method to fabricate Schottky and isolating CBLs in GaN LED are investigated. Optical and electrical measurements of these vertical LEDs with and without CBL show different light output powers at identical current densities. The results of this study indicate that CBLs could also be used to suppress the efficiency droop effect for GaN LEDs.

Synthetic biodegradable polymers are commonly used as scaffolds for tissue engineering despite their poor cell adhesion compared to natural polymers. One of the problems in using biodegradable scaffolds is that a higher cell colonization at the scaffold periphery and inadequate colonization at its center is generally noted. Such aspects could seriously compromise the in vivo regeneration of a damaged tissue and, in turn, the success of the implant. Plasma processes have been lately proven as promising scaffold modification techniques. The current work aims at enhancing cell colonization in the core of polymer scaffolds via plasma deposition of coatings with different chemical characteristics. The versatility and ability of plasma processes to modify only the outermost layer of a material can render them competitive with respect to wet chemistry approaches in the field of biomedical materials. In this paper some of the results obtained by plasma processing of 3D interconnected porous polymer scaffolds for Tissue Engineering will be shown. In particular, it will be shown how it is possible to enhance cell adhesion, growth and colonization in porous Polycaprolactone (PCL) scaffolds where gradient of surface compositions are induced from the external (e.g., hydrophobic, slightly cell-repulsive) to the internal (e.g., hydrophilic, cell-adhesive) side of the scaffolds. 3D scaffolds were modified with several RF (13.56 MHz) deposition and treatment plasma processes. Materials were characterized by means of XPS, and FT-IR techniques. Cell-growth experiments were run with cell-lines to check the efficiency of several treatments to enhance/accelerate cell in-growth inside scaffolds.

Nanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak temperature compared to that of the cells with the SiO2 dielectric after constant pulse activation, due to the interface scattering mechanism. Scaling of the SLL dielectric has resulted in higher peak temperatures, which can be even higher after material/structural modifications. Furthermore, the SLL dielectric has good material properties that enable the cells to have high endurance. This shows the effectiveness of the SLL dielectric for advanced memory applications.

The development of suitable hot-forming processes, e.g. forging, is an important step towards the serial production of TiAl parts. Several microstructure parameters change during hot-forming. However, the underlying mechanisms can normally only be inferred from post process metallographic studies.

We used a deformation dilatometer modified for working in the HZG synchrotron beamlines at DESY for hot-deformation experiments. This setup enables the in situ monitoring of the interaction and evolution of microstructure parameters during processing. We observed the evolution of phase fractions, grain size and crystallographic texture during deformation while simultaneously recording the process parameters, like temperature, force and length change.

Here we present the hot compressive deformation behaviour of a Ti-43Al-4Nb-1Mo-0.1B (in at.%) alloy. Several specimens were deformed at three temperatures each with two compression rates. During the experiments the Debye-Scherrer diffraction rings were continuously recorded.

Corrosion attack is implemented on the aluminum alloy AISI 6063-T5 for six different non corroded and pre-corroded specimens. Concerning pre-corroded specimens, they are divided in two groups; the first one is immersed for 1 and 2 minutes in hydrochloric acid with 20% concentration, and the second group for 2, 4, 6 minutes of immersion but in HCl with 38% of concentration. Rotating bending fatigue tests are carried out on corroded and non-corroded specimens at the frequency of 50 Hz, at room temperature and without control of environmental humidity. Loading conditions are fixed by Finite Element numerical simulation; the loading ranges are 90%, 80%, 70% and 60% of the yield stress of this aluminum alloy. A numerical simulation study is carried out by means of the Ansys software to investigate the stress concentration factor variation induced by the proximity of two close pitting holes: in longitudinal and transversal direction regarding the principal applying loading. Finally, optical microscopy is used to analyze the fracture surfaces in longitudinal and transversal directions, in order to establish possible causes of fatigue fracture.

This dietary study compares concentrations of trace elements in human skeletal series from the municipal cemetery of Xoclán, in Mérida, Yucatan, and a skeletal collection that was donated by the Yucatecan State Justice Department (PGH). The results from these modern samples are to be compared to those obtained from human collections from a colonial cemetery from Campeche and the pre-Hispanic Maya site of Xcambó. Our results indicate that the archaeological series show higher concentrations of Sr compared to the modern populations, both of which showed very similar values. Zn concentrations were similar when the modern values were compared to those derived from the colonial series from Campeche. Xcambó´s population, in turn, shows a high degree of variability in Zn values, which may be due to diagenetic contamination.

Silicon nanoparticles of 100 nm obtained by high-energy ball milling were characterized by X-ray diffraction (XRD) and transmission electronic microscopy (TEM). Results show dark areas due to a staking of defects. On the other hand, brighter areas exhibit a combination of small crystalline and amorphous zones. To fulfill and cover the micro-cracking and micro-pores generated during the welding process of 304 stainless steels joined by brazing, these nanoparticles were deposited directly in the fracture. The amorphous silicon drove the Transient Liquid Phase (TLP) at 1000°C for 20 min. This amorphous silicon decreases the energies of reaction between the substrate and melting filler. TLP increases the wettability and capillary forces between micro-cracking and micro-pores; due to that, the eutectic phase contained by the melting filler forms a liquid. Moreover, the weld beads were characterized by Scanning Electron Microscopy (SEM) to analyze the effect of silicon nanoparticles on the weld beads. These results showed that the interaction of the Si nanoparticles with metallic filler in the melting zone decreases the size and change the morphology of the present phases as well as the zone of isothermic growth.

Reflective fibres were obtained in a two step process. First a core polyamide 6 fibre was spun from the melt and successively stretched. Then a chiral nematic liquid crystal coating was applied onto the surface of this fibre and further cured under UV light. The liquid crystal alignment was controlled by the molecular orientation of the polymer fibre and the 10 μm thick mono-domain coating presented a periodic helical organisation with a pitch of 350 nm. The obtained fibre showed strong Bragg reflection giving an intense green colour changing upon viewing angle. The fibre has been integrated into a fabric suggesting its application for textile design, fashion, and apparel.

A novel resistive device with a floating electrode (RFED) has been manufactured as a stack of layers Cu/TaOx/Pt/TaOx/Cu in a crossbar array comprising two single resistive switches merged antiserially at the common inert Pt floating electrode. The device exhibits four states HRS/HRS, HRS/LRS, LRS/HRS and LRS/LRS, where HRS and LRS are the high and low resistance states, respectively, with only LRS/LRS being fully conductive. When the voltage on one Cu electrode is increased to a value Vth-on(A), a conductive nanofilament (CF) in switch A is formed, while suppressing CF formation in switch B. When the voltage is then extended to negative bias, a sudden jump in the I-V characteristics is observed at Vth-on(B), when the 2nd CF in switch B is formed rendering the RFED device fully conductive. If the current surge just after the formation of CF in 2nd switch exceeds the reset current of the 1st CF, the 1st CF ruptures shortly thereafter, i.e. the conductive state is destroyed as soon as it has been created. This property proves valuable for applications in neural networks where a generation of a current pulse at a critical threshold is required. The height and the time width of the firing pulse is an inherent property of the device and can be controlled by the parameters of the individual switches and their set/reset operations.

A unique simulation method of epoxy-based chemically-amplified resist by coarse-grained molecular dynamics was proposed. The mechanical properties of an epoxy-based chemically-amplified resists with various cross-linking ratios were simulated using a newly developed coarse-grained molecular dynamics simulation that employs a bead-spring model. Models with the different cross-linking ratios were created in the molecular dynamics calculation step and uniaxial elongation simulations were performed. The results reveal that the simulated elastic modulus of the resist modeled by the bead-spring model with an extended angle bending potential depends on the cross-linking ratio; its dependency exhibits good agreement with that determined by nanoindentation tests.

Single-crystalline organic solar cells were investigated. Rubrene single crystals made by train sublimation method were used for the active layer of the solar cells. Typical solar cell characteristics and external quantum efficiency (EQE) were observed with the film thickness of several micrometers. In spite of their large film thickness, the EQE spectra showed no screening effect, which means that absorbed photons efficiently converted to electric charges. This can be attributed to the extended exciton diffusion due to uniform and trap free characteristic of rubrene single crystal.

Nd3+-doped fluorozirconate glasses, which were additionally doped with chlorine ions, were investigated for their photoluminescence (PL) properties. Upon heat treatment of the as-made glass, hexagonal phase BaCl2 nanocrystals are formed within the material, which undergo a phase transformation to orthorhombic BaCl2 upon annealing at a higher temperature. The glasses with hexagonal phase BaCl2 nanocrystals show an enhanced Nd3+ PL in the visible spectral range. Time-resolved spectroscopy on the 4 G5/2 / 2 G7/2 → 4 I9/2 transition shows that the existence of hexagonal BaCl2 nanocrystals results in a significantly longer decay time. The temperature dependence of the lifetime yielded that the enhanced PL is due to a reduced multi-phonon relaxation rate.