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COMMISSION 46: ASTRONOMY EDUCATION AND DEVELOPMENT
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- Journal:
- Proceedings of the International Astronomical Union / Volume 6 / Issue T27B / December 2010
- Published online by Cambridge University Press:
- 14 May 2010, pp. 270-272
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- December 2010
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Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
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- 17 March 2011, G2.6
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- 2000
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Surface activity of magnesium during GaN molecular beam epitaxial growth
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 280-286
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- 2000
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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 858-863
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- 1999
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Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W3.65
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- 1999
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Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e12
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- 1998
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Schottky Diodes on MOCVD Grown AlGaN Films.
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e37
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- 1998
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Carbon Incorporation in Si1-yCy Alloys Grown by Ultrahigh Vacuum Chemical Vapor Deposition
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- MRS Online Proceedings Library Archive / Volume 533 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 275
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- 1998
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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
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- 15 February 2011, G9.5
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- 1998
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Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 363
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- 1997
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Factors Influencing the Electrical and Optical Properties of Aigan Layers on Sapphire
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- MRS Online Proceedings Library Archive / Volume 423 / 1996
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- 15 February 2011, 643
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- 1996
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The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of Aigan Samples Grown on Sapphire
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- MRS Online Proceedings Library Archive / Volume 423 / 1996
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- 15 February 2011, 607
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- 1996
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High Resistivity AlxGa1−xN Layers Grown by MOCVD
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
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- 13 June 2014, e36
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- 1996
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Growth of AlBN Solid Solution by OMVPE
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
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- 10 February 2011, 141
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- 1996
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Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE
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- MRS Online Proceedings Library Archive / Volume 449 / 1996
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- 10 February 2011, 591
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- 1996
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GeSi Infrared Detectors Using Selective Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 402 / 1995
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- 15 February 2011, 443
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- 1995
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Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors
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- MRS Online Proceedings Library Archive / Volume 299 / 1994
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- 15 February 2011, 267
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- 1994
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Kinetics of Epitaxial Layer Growth from Silane on (100) Silicon
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- MRS Online Proceedings Library Archive / Volume 312 / 1993
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- 15 February 2011, 237
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- 1993
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Comparison of Mesa- Etched and Ion- Implanted GexSi1-x Heterojunction Bipolar Transistors
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- MRS Online Proceedings Library Archive / Volume 262 / 1992
- Published online by Cambridge University Press:
- 03 September 2012, 785
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- 1992
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Electrical and Structural Properties of Cobalt Annealed on Silicon-Germanium Epilayers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 647
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- 1992
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