Lateral conductivity effects have been investigated in self-organised InAsquantum dot (QD) structures grown in a GaAs matrix with different caplayers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitanceand conductance frequency dependence, fast defect transient (FDT),and electron beam induced conductivity (EBIC) measurements were applied.The conductivity in the QD plane decays within a distance of 10 microns.The capacitance transients are dominated by the local QD-plane transversalconductivity and by the free carrier transport in the cap layer.The nonequilibrium free carrier created by electron beam excitationdevelop a potential barrier at macroscopic distances from the electricalcontacts.