The effect of sheared E × B flow on the blob dynamics in the scrape-off layer (SOL) of HL-2A tokamak has been studied during the plasma current ramp-up in ohmically heated deuterium plasmas by the combination of poloidal and radial Langmuir probe arrays. The experimental results indicate that the SOL sheared E × B flow is substantially enhanced as the plasma current exceeds a certain value and the strong sheared E × B flow has the ability to slow the blob radial motion via stretching its poloidal correlation length. The locally accumulated blobs are suggested to be responsible for the increase of plasma density just outside the Last Closed Flux Surface (LCFS) observed in this experiment. The results presented here reveal the significant role played by the strong sheared E × B flow on the blob dynamics, which provides a potential method to control the SOL width by modifying the sheared E × B flow in future tokamak plasmas.

Although the strong coupling of polarization to spontaneous strain in ferroelectrics would impart a flux-closure with severe disclination strains, recent studies have successfully stabilized such a domain via a nano-scaled multi-layer growth. Nonetheless, the detailed distributions of polarizations in three-dimensions (3D) and how the strains inside a flux closure affect the structures of domain walls are still less understood. Here we report a 3D polarization texture of a 4-fold flux closure domain identified in tensile strained ferroelectric PbTiO3/SrTiO3 multilayer films. Ferroelectric displacement analysis based on aberration-corrected scanning transmission electron microscopic imaging reveals highly inhomogeneous strains with strain gradient above 107/m. These giant disclination strains significantly broaden the 90° domain walls, while the flexoelectric coupling at 180° domain wall is less affected. The present observations are helpful for understanding the basics of topological dipole textures and indicate novel applications of ferroelectrics through engineering strains.

This article presents an extruded Mg–Gd–Zn–Zr alloy produced by conventional ingot metallurgy, exhibiting high-strength and excellent ductility at room and elevated temperatures. The superplastic behavior was observed in the Mg–Gd–Zn (–Zr) alloy at elevated temperatures above 573 K. In the alloy, both the X phase in grain boundaries and the lamellae within matrix have the 14H-type long-period, stacking-ordered structure. It indicates that the X phase and the lamellae within matrix play important roles in the excellent mechanical properties.

The coherent fine lamellae consisting of the 2H-Mg and the 14H-type long period stacking ordered (LPSO) structure within α′-Mg matrix have been first observed in an as-cast Mg96.32Gd2.5Zn1Zr0.18 alloy. During subsequent solid solution heat treatment at 698–813 K, in addition to the lamellae within matrix, a novel lamellar X phase (Mg–8.37±1.0Zn–11.32±1.0Gd, at.%) with the 14H-type LPSO structure was transformed from the dendritical β phase, and a corresponding time–temperature–transformation (TTT) diagram was established. The 14H-type LPSO structure existing in Mg–Gd–Zn–Zr alloys derives from two variant means: the formation of LPSO structure within α′-Mg matrix and the transformation of the dendritical β phase to a lamellar X phase with the LPSO structure. The alloy solid solution treated at 773 K for 35 h exhibits higher tensile strength and better elongation than the nonheated alloy because of the lamellar X phase with the 14H-type LPSO structure and the 14H-type LPSO structure within matrix.

In this paper, new minimax theorems for mixed lower-upper semicontinuous functions in probabilistic metric spaces are given. As applications, we utilise these results to show the existence of solutions of abstract variational inequalities, implicit variational inequalities and saddle point problems, and the existence of coincidence points in probabilistic metric spaces.

GaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.