This paper reports the development of micromachining processes, as well as electrical and mechanical evaluation of a stimuli-responsive, mechanically-dynamic polymer nanocomposite for biomedical microsystems. The nanocomposite, which consists of a cellulose nanofiber network embedded in a poly(vinyl acetate) matrix, was shown to display a switchable stiffness comparable to bulk samples, with a Young’s modulus of 3570 MPa in the dry state, which reduced to ~25 MPa in the wet state, with a stiff-to-flexible transition-time dependent on exposed surface area. Upon immersion in phosphate buffered saline, the ac resistance through the PVAc-TW thickness was found to reduce from 8.04 MΩ to ~17 kΩ. Electrochemical impedance of an Au electrode on PVAc-TW was found to be ~178 kΩ at 1 kHz, and this was found to be stable as the probe shank was flexed to compress the metal, but increased with increasing flex angle when the metal was flexed into a tensile state.

Multiferroics, the study of materials which possess ferromagnetic and ferroelectric ordering in a single phase, has become an area of prominent research. Moreover, this behavior has been extensively studied in materials which possess a perovskite crystal structure such as BiFeO3 and YMnO3. Due to their weak saturation magnetic moment, many rare-earth orthoferrites are currently of extreme interest. Utilizing a solid-state reaction between Y2O3 and Fe2O3 we have developed the rare-earth orthoferrite YFeO3 and conducted a bulk material study to determine this material’s availability for thin film multiferroic research. The absence of Y2O3 and Fe2O3 impurities was confirmed using Copper-Kα XRD. Examination of the dependence of the magnetization M on the temperature T was conducted to determine the reliability of multiferroic behavior across varying temperatures in conjunction with the investigation of the dependence of M on the electric field strength H. Results clearly display ferromagnetic behavior in our bulk material, providing ample evidence that our bulk material is an excellent candidate for thin film studies. Future studies on multiferroic YFeO3 thin films grown via pulsed laser deposition on Lanthanum Aluminate substrates will be conducted. Detailed data will be provided via XRD and SQUID to confirm magnetic properties while impurities are non-existent in our thin films.

In order to realize the magnetic refrigeration system, it is necessary to develop a 100 W class refrigerator with COP > 7.5. This requires us to find new magnetic refrigerant materials, of which cooling capacity is 2.5 times higher than that of Gd. In this paper, first we discuss the cooling capacity of magnetic refrigerant materials to achieve COP = 7.5. Then, we compare the experimental results of MnAsSb, MnFe(PGe) and La(FeCoSi)13 compounds with the calculated cooling capacity. It is suggested that a composite layer material of MnFe(PGe) would show excellent cooling capacity in the temperature span of 20 K.

Recently, a wide range of new applications of diamond materials such as spintronics, field emission, and bio-sensing have been proposed. These applications often require the precise patterning of diamonds, which is not trivial because diamonds are the hardest materials known in nature. Among various patterning techniques, the focused ion beam milling method has been proven to provide flexibility as well as high resolution in the pattern design. In this study, a focused beam of 30 kV Ga+ ions was utilized to create sub-micrometer size patterns out of crystalline diamonds. The sputtering rate, re-deposition, and surface roughening of diamond structure have been closely monitored with various milling parameters during the milling process. Our study revealed a low milling yield of 0.02 μm3/nC, high Ga content re-deposition, and the formation of sub-micron scale terracing on the sidewall of patterned diamonds.

A large-area graphene layer identification technique was developed for research and industrial applications. It is based on the analysis of optical microscopy images using computational image processing algorithms. The initial calibration is performed with the micro-Raman spectroscopy. The method can be applied to the wafer-scale graphene samples. The technique has the potential to be the gateway in the development of fully automated statistical process control methods for the next generation thin-film materials used by the semiconductor industry. The proposed technique can be applied to graphene on arbitrary substrates and used for other atomically thin materials.

Electron spin resonance study of low-κ insulating layers reveals that from a defect perspective these materials resemble oxygen-rich silicon dioxide matrices. The films fabricated using chemical vapor deposition in combination with porogen technology also contain a considerable amount of residual carbon in the form of clusters. Furthermore, ion sputtering damage generates additional defects provisionally identified as dangling bonds in the silicon oxycarbide clusters. The density of these defects is found to increase with increasing porosity of the low-κ insulator. Nevertheless, a lower defect density may be attained if using a porogen-free self-assembly technology.

CZTS (Copper zinc tin sulfide) thin films have been synthesized on transparent conducting oxide (TCO) back contacts on a glass substrate, allowing sun light to pass through the entire solar cell. Aqueous solution based co-electrodeposition followed by elevated temperature sulfurization, was used to grow CZTS on transparent fluorinated tin oxide. Loss in conductivity of FTO is observed after sulfurization, causing reduced device efficiency. Increased resistivity of the FTO is likely due to outdiffusion process. A systematic study of resistivity of back contact at various sulfurization temperatures and times is discussed. Various remedial measures for improved conductivity of back contact were proposed and conducted.

Cahn-Hilliard type of phase-field (PF) model coupled with elasticity equations is used to study the instabilities in multilayer thin films. The governing equations of the solid state phase transformation include a 4th order partial differential equation representing the evolution of the conserved PF variable (concentration) coupled to 2nd order partial differential equations representing the mechanical equilibrium. A mixed order Galerkin finite element (FE) model is used including C0 interpolation functions for the displacement, and C1 interpolation functions for the concentration. It is shown that quadratic convergence, expected for conforming elements, is achieved from this coupled mixed-order FE model.

Using the PF – FE model, first, we studied the effect of compositional strain on the PF interface thickness and the results of simulations are compared with the analytical solutions of an infinite thin film diffusion couple with a flat interface.

Morphological instabilities in binary multilayer thin films are investigated. The alloys with and without intermediate phase are considered, as well as the cases with stable and metastable intermediate phase. Maps of transformations in multilayer systems are carried out considering the effects of initial thickness of layers, compositional strain, and growth of a stable/unstable intermediate phase on the instability of the multilayer thin films. It is shown that at some cases phase transformation, intermediate phase nucleation and growth, or deformation of layers due to high compositional strain can lead to the coarsening of the layers which can result in different mechanical and materials behaviors of the original designed multilayer.

Metal oxide nanostructures have shown significant promise for biosensors, gas sensors, photocatalyst and other biomedical applications. Among these, zinc oxide (ZnO) nanostructures, exhibiting interesting properties such as high catalytic activity, biocompatibility, high isoelectric point, large surface to volume ratio, make them a good candidate for biosensing applications. Here we report the synthesis of ZnO nanorods (ZnONR) on ITO films in aqueous phase and its application in Urea biosensor fabrication. ZnONR have been synthesized by a two-step method, first seed growth of ZnO by sputtering on ITO films followed by decomposition of zinc nitrate hexahydrate / hexamethylenetetramine (HMT) in aqueous phase. Exploiting the high isoelectric point of ZnO, a Urease/ZnONR/ITO bioelectrode has been fabricated by physical binding of Urease (Urs) onto ZnONRs. X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), and cyclic voltammetry (CV) have been used to characterize ZnONR and the Urs/ZnONR/ITO bioelectrode. The FE-SEM and XRD measurements confirm the formation of ZnONR. The electrochemical data from the Urs/ZnONR/ITO biolectrode reveal linearity between 1-11 mM with sensitivity of 0.9 μA/mM and a relatively low Michaelis-Menten constant (Km) of 5.01 mM for urea sensing. The results indicate the potential of ZnONR films for fabrication of commercial biosensors.

Thin film silicon solar cells are attractive for photovoltaics; however, the poor charge transport in this material requires that the devices are thinner than the absorption length. Adequate absorption can nevertheless be achieved by light scattering at textured interfaces because light can get trapped inside the absorber layer if it is scattered into angles above the critical angle of total internal reflection. This situation can be identified with the propagation of a guided mode in a waveguide where silicon plays the role of the high index guiding medium and the interface texture serves to couple the incident light to modes via grating coupling. We present an experimental realization of a solar cell structure on a line grating where the enhanced photocurrent can be clearly related to resonant excitation of waveguide modes.

Carbon is a favorable alternative as counter electrode material for dye sensitized solar cells (DSSC) as compared to Pt. Various carbon materials such as carbon nanotubes (CNT), activated carbon (AC) and carbon nanofibers have been investigated as counter electrodes for DSSC applications, based on their high electrochemical activity, high specific surface area, chemical inertness and high electrical conductivity. Among various phases of carbon, diamond is the most robust and chemical inert material that can be used for electrode application. It has band gap of 5.5 eV, high thermal conductivity. its electrical resistivity can be tuned by doping such as boron. In this work, we investigate boron doped diamond thin film electrode for DSSCs. The conductive diamond thin electrode films were grown using Blue Wave hot wire chemical vapor deposition (HWCVD) system. The electrical resistance in diamond thin films was tuned by controlling grow temperature, filament power, dopant concentration and sp3/sp2 ratio in the film, it thickness, and initial seeding process. Scanning electron microscopy, Raman spectroscopy and electrical resistivity measurement were used to characterize morphology, diamond quality and electrode conductivity, respectively. Diamond film electrodes with optimized surface morphology and electrical characteristics were used for DSSC fabrication. We used nanocrystalline TiO2 paste (P25 Degussa) with average particle size of 25nm as an active layer, the electrolyte comprised of a LiI/I2 electrolyte in acetonitrile (CH3CN), a Ru based metal complex dye [cis-diisothiocyanato-bis(2,2’-bipyridyl-4,4’-dicarboxylato) ruthenium(II) bis(tetrabutylammonium)] OR N719 was used as sensitizer. The photovoltaic performance was determined using J-V characteristics under standard illumination conditions and was compared to a reference DSSC with Pt counter electrode. Results are discussed in the context of diamond electrical and durability and chemical stability of diamond films against most commonly used family of iodine based electrolytes.

We have studied the structural and magnetic properties of La0.7Sr0.3Mn1-xNixO3 (x=0.05, 0.10, 0.20, 0.30, and 0.40) perovskites using x-ray and neutron diffraction and magnetic measurements. To our knowledge, there exists no neutron diffraction data available for this group of perovskite compositions. Neutron (λ = 1.479Å) and x-ray (λ = 1.5481Å; Cu Kα) powder diffraction indicate that for x ≥ 0.1 all samples are two-phase with a rhombohedral perovskite structure (space group R-3c) and a small amount of NiO (space group Fm3m). Neutron diffraction data for the perovskite phase at 12K and 300K show ferromagnetic ordering for x ≤ 0.2 and antiferromagnetic ordering for x = 0.4. However, for x = 0.3, neutron diffraction data at 12K show coexisting ferromagnetic and antiferromagnetic ordering while at 300K no magnetic ordering is found. Magnetic measurements indicate that the Curie temperature decreases with increasing Ni content. The NiO phase for all samples was found to have antiferromagnetic ordering at 12K and 300K. The magnetic measurements are consistent with the neutron diffraction data and together indicate long-range magnetic ordering for samples at low temperature and transitions from ferromagnetic to paramagnetic to antiferromagnetic ordering for samples at room temperature.

In this work, we present a reliability and stability study of doped hydrogenated amorphous silicon (n+-a-Si:H) thin-film silicon MEMS resonators. The n+-a-Si:H structural material was deposited using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and processed using surface micromachining at a maximum deposition temperature of 110 ºC. n+-a-Si:H resonant bridges can withstand the industry standard of 1011 cycles at high load with no structural damage. Tests performed up to 3x1011 cycles showed a negligible level of degradation in Q during the entire cycling period which in addition shows the high stability of the resonator. In measurements both in vacuum and in air a resonance frequency shift which is proportional to the number of cycles is established. This shift is between 0.1 and 0.4%/1x1011 cycles depending on the applied V DC. When following the resonance frequency in vacuum during cyclic loading, desorption of air molecules from the resonator surface is responsible for an initial higher resonance frequency shift before the linear dependence is established.

ITO nanowires were synthesized by carbothermal reduction process, using a co-evaporation method, and have controlled size, shape, and chemical composition. The electrical measurements of nanowires showed they have a resistance of about 102 Ω. In order to produce nanocomposites films, nanowires were dispersed in toluene using an ultrasonic cleaner, so the PMMA polymer was added, and the system was kept under agitation up to obtain a clear suspension. The PMMA polymer was filled with 1, 2, 5 and 10 % in weight of nanowires, and the films were done by tape casting. The results showed that the electrical resistance of nanocomposites changed by over 7 orders of magnitude by increasing the amount of filler, and using 5 wt% of filler the composite resistance decreased from 1010 Ω to about 104 Ω, which means that percolation threshold of wires occurred at this concentration. This is an interesting result once for nanocomposites filled with ITO nanoparticles is necessary about 18% in weight to obtain percolation. The addition of filler up to 10 wt% decreased the resistance of the composite to 103 Ω, which is a value close to the resistance of wires. The composites were also analyzed by transmission electron microscopy (TEM), and the TEM results are in agreement with the electrical ones about percolation of nanowires. These results are promising once indicates that is possible to produce conductive and transparent in the visible range films by the addition of ITO nanowires in a polymeric matrix using a simple route.

Because of their superior electronic properties and bottom-up growth mode, Carbon Nanotubes (CNT) may offer a valid alternative for high aspect ratio vertical interconnects in future generations of microchips. For being successful, though, CNT based interconnects must reach sufficiently low values of resistance to become competitive with current W or Cu based technologies. This essentially means that CMOS compatible processes are needed to produce dense CNT shells of extremely high quality with almost ideal contacts. Moreover, their electrical properties must be preserved at every process step in the integration of CNT into vertical interconnect structures. In this work this latter aspect is analyzed by studying the changes in the electrical characteristics when encapsulating CNT into different oxides. Oxide encapsulation is often exploited to hold the CNT in place and to avoid snapping during a polishing step. On the other hand, oxide encapsulation can influence the properties of the grown CNT which are directly exposed to possibly harmful oxidative conditions. Two different deposition techniques and oxides were evaluated: Chemical Vapor Deposition (CVD) of SiO2 (reference) and Atomic Layer Deposition (ALD) of Al2O3 in less aggressive oxidizing conditions. The two processes were transferred to CNT interconnect test structures on 200mm wafers and electrically benchmarked. The CNT resistance was measured in function of the CNT length which allows the extraction and individual distinction of the resistive contributions of the CNT and the contacts. It is shown that the encapsulating SiO2 deposited by CVD degrades the resistance of CNT by altering their quality. Directions for future improvements have been identified and discussed.

The focus of this paper is the characterization of novel thermophotovoltaic (TPV) cell designs which employ a monovalent barrier layer in the p-n junction. The use of a barrier layer enables these cells to operate at longer wavelengths, higher efficiencies, and higher operating temperatures. Initial designs have been made using gallium antimonide (GaSb), which is one of the more common TPV materials. Simulations were performed using Sentaurus by Synopsys to determine barrier materials as well as to optimize the cell. The p-B-n cell was then compared to a simple p-n junction. The simulations show that a p-B-n cell outperforms a typical p-n junction. Additionally, we expect to see increased performance differentials from this device structure when moving to longer wavelength devices.

Electrode thin films made of LiCoO2, Li-Mn-O and SnO2 were synthesized by rf magnetron sputtering on silicon and stainless steel substrates. In order to increase the active surface direct laser structuring methods using ns- and ps-laser sources were applied. A laser system operating at a wavelength of 248 nm with a pulse length of 4-6 ns and repetition rates up to 500 Hz enabled the formation of high aspect ratio micro- and sub-micron structures with feature sizes down to less than 400 nm. Subsequent to the laser structuring process, laser annealing of LiCoO2 and Li-Mn-O was performed in order to achieve an appropriate crystalline phase which shows improved electrochemical cycling performance. Laser annealing was applied via a high power diode laser system operating at a wavelength of 940 nm. In case of LiCoO2 the high temperature phase was obtained through laser-annealing while for Li-Mn-O the spinel phase was formed. For both LiCoO2 and Li-Mn-O thin films appropriate annealing parameters were temperatures of up to 680 °C and an annealing time of 100 s.

We report on the influence of the laser heating effect, potentially present in a Raman scattering experiment, on the behaviour of carbon phonon lines in the spectra of nanodiamond particles. Aside from the laser power used in the experiment, the extent of the thermal effect in question depends also on the nanodiamonds origin (obtained through detonation and high pressure high temperature techniques) as well as on the nanoparticles size. Laser heating should be properly taken into account when discussing Raman spectra of carbonaceous species, in particular, prior to addressing peak assignment and possible quantum confinement effects.