We present the results and critical analyses of recent studies of ultrafast optical nonlinearities of liquid crystals in the isotropic and ordered phases for time scales spanning femtoseconds – microseconds. Pure undoped liquid crystals as well as liquid crystals containing plasmonic nano-particles have been investigated. Individual molecular electronic optical nonlinearities are found to be useful for femtoseconds – nanoseconds nonlinear transmission clamping applications. On the other hand, laser induced order parameter and birefringence modification in aligned nematic cells allow very rapid transmission switching of visible as well as near infrared lasers with response times in the sub-microseconds - few nanoseconds regime.

A key issue in using Polydimethylsiloxane (PDMS) based micropillars ascellular force transducers is obtaining an accurate characterization ofmechanical properties. The Young’s modulus of PDMS has been extended from aconstant in the ideal elastic case to a time-dependent function in theviscoelastic case. However, the frequency domain information is of morepractical interest in interpreting the complex cell contraction behavior. Inthis paper, we reevaluated the Young’s relaxation modulus in the time domainby using more robust fitting algorithms than previous reports, andinvestigated the storage and loss moduli in the frequency domain using theFourier transform technique. With the use of the frequency domain modulusand the deflection of micropillars in the Fourier series, the forcecalculation can be much simplified by converting a convolution in the timedomain to a multiplication in the frequency domain.

In this study, novel Si2Sb2Te6 phase change material is investigated in detail for the phase change memory application using transmission electron microscopy and X-ray photoelectron spectroscopy. The phenomenon that Te diffuses to the film surface during phase switching and successively evaporates out has been confirmed. The phase change memory cells employing Si2Sb2Te6 and Si3Sb2Te3 materials are fabricated and programmed. For the Si2Sb2Te6-based cell a data endurance of 5×105 cycles is achieved with a failure mode resembling reset stuck, which can be attributed to the migration of Tellurium during the operation cycles. It means that a thermally stable material system of SixSb2Te3 is preferred for the PCM applications.

Arrays of CdTe nanowires have been grown on conductive, flexible Mo substrates by the vapor-liquid-solid technique. A method of forming the arrays on a largely continuous CdTe film is described. For producing nanowire solar cells, this structure provides the advantage of preventing shunts. Nanowires having diameters in the range 100-500 nm and lengths up to 100 μm were generated. The influence of growth temperature, time and pressure on the morphology of deposited layers was investigated, and a mechanism for the generation of layer/nanowire combinations is postulated. Characterization by SEM, TEM and low temperature photoluminescence is presented.

Spintronic devices generally require the spin of carriers to be utilized in the storage or manipulation of data. One theoretical model for ferromagnetism in dilute magnetic semiconductors (DMS) results from the percolation of ferromagnetic regions around dilute dopants such as Mn atoms in III-V or group IV materials through the interaction of Mn atoms with carriers. Our work employed Mn implantation in Ge with subsequent rapid thermal annealing or TEM in-situ annealing to study the correlation between structure and magnetic properties. The magnetic properties of 300-350 ºC implanted Ge:Mn (which produced crystalline Ge films) varied significantly with implantation dose and annealing condition due to precipitation and transformation of different MnxGe1-x secondary phases. It was found that Mn substitution of Ge and MnxGe1-x secondary phases can both result in ferromagnetic properties. By combining TEM in-situ annealing and ex-situ magnetic characterization, we have demonstrated detailed correlation of magnetic properties with nanoscale structures in Mn implanted Ge DMS materials.

To achieve ultrasonic transducers operating above 100 MHz, square pillar shaped Pb1.1(Zr0.53Ti0.47)O3 thick film structures were fabricated using a chemical solution deposition (CSD) process. The fabricated sample showed well-saturated P-E hysteresis curve and butterfly-shaped longitudinal displacement curve. The fabricated samples generated more than 100 MHz ultrasonic waves with a pulser/receiver. Electrical impedance properties of the samples were measured with an impedance analyzer. A number of spurious resonant modes were observed in the frequency range from 40 to 300 MHz. The characteristics of the sample were investigated by finite element method (FEM). The FEM simulations were in good agreement with the experimental results. For free-standing (substrate free) 10-μm-thick PZT film models, the resonant frequency of the thickness vibration mode was estimated to be 160 MHz with the FEM simulations. These results indicate that the substrate affects the behavior of the spurious resonant modes. Therefore, a sample structure was designed using the FEM simulation. The FEM result suggests that the backside of the substrate should be removed to reduce the substrate effects. Consequently, the thickness vibration mode was observed clearly at 160 MHz. This structure is applicable to the micromachined ultrasonic transducers (MUT) operating in the thickness vibration mode above 100 MHz.

Charge injection property of organic thin film devices is a key issue tounderstand the device operation. Displacement current measurement (DCM) is apowerful technique to probe the charge injection behaviors in terms of achange in the apparent capacitance of test devices. However, it requires tosuppress actual current flowing through the device for investigating thedetails of interface phenomena. We propose here the use of ionic liquids(ILs) as a top contact insulator in organic metal-insulator-semiconductor(MIS) structures. Because of the high stability and dielectric constant ofthe ILs, the external applied voltage was applied mainly to the organiclayer with suppressing the actual current. The DCM curves of Ptwire/IL/α-NPD/ITO structure were measured, and they actually show thesignals due to the hole injection from theITO to α-NPD layer andaccumulation at the IL/α-NPD.

We present a novel ZnO:Al fabrication process consisting of room-temperature vacuum sputtering followed by an excimer laser annealing (ELA). The ELA treatment improves the optical transmission of the films, and the film resistivities (<1 mΩ·cm) remain stable or improve with increasing laser fluence up to 0.6 J/cm2, as the carrier density increases but the carrier mobility is degraded. This process is followed by a standard dilute HCl chemical texturing step, and produces substrates with suitable texture, conductivity, and transparency properties for thinfilm photovoltaic applications. Substrates resulting from this process display elevated haze levels (80% at 600 nm and 50% at 800 nm) after the wet-chemical etching step. Such substrates have been used to make single junction hydrogenated nanocrystalline silicon solar cells, and an increase in the short-circuit current of up to 2.2 mA/cm2 is observed compared to a substrate deposited by a standard room-temperature sputtering + wet-etch process. This gain is primarily due to increased photo-response in the red due to improved light-scattering, as at wavelengths greater than 600 nm, a gain in photocurrent of up to 1.7 mA/cm2 is observed.

Faience production methods include efflorescence, direct glaze application, and cementation glazing. However, similar processing has been used with a variety of other materials, such as glazed monolithic quartz, ground and re-fired faience, and steatite bodies. Furthermore, faience technology has been linked by similar processing to glass, synthetic pigment and glazing technologies. Here we reinforce these cross-craft relationships by comparing the range of similar functioning chemical elements in faience and glazed artifacts from a variety of archaeological sites that range from the Indus Valley to the Mediterranean. This broad comparative method based primarily on x-ray fluorescence analysis reveals trends in faience production, relationships with metallurgical technologies, and aspects of processing that provide areas of study that may be considered more closely in the future.

The unipolar resisitive switching properties of MOCVD deposited NiO in Ni/NiO/TiN stacks is reported. The switching quality is defined as function of RESET current and Roff/Ron ratio, and the importance of the Forming current and voltage on these parameters is discussed. The effect of structural stack variations as NiO thickness, Ti doping, and TiN thickness on the switching behavior of NiO is explained by the effect on the forming current and voltage conditions, and on Joule heating dissipation. Thinner NiO films, Ti doping, as well as thicker top electrode improve the switching quality by decreasing the RESET current and increasing the Roff/Ron ratio.

In this study we investigate how exposure to ambient air and light duringdevice processing affects the opto-electronic properties of poly-3-hexylthiophene (P3HT) : [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bulkheterojunction solar cells (BHJ). The properties of pure P3HT layersprepared in an inert atmosphere, under ambient conditions, and additionallydegraded under light in ambient conditions were investigated usingphotoluminescence (PL) and photoinduced absorption (PIA). It was observedthat exposure to air during processing leads to oxygen doping of thepolymer. Exposure to air combined with light was found to significantlydecrease the PL and PIA signals. The current-voltage (I-V) and externalquantum efficiency (EQE) characteristics of solar cells fabricated in aninert atmosphere were compared to solar cells processed under ambientconditions. It was observed that processing in air leads to a reduction inthe photocurrent in the devices which is attributed to electron trapping byoxygen in the active layer.

In this study, the authors focused on children from 2-8 years of age and asked the simple question: what do engineers do? The number one response was: “I don’t know”, the number two response was “they drive a train.” While children are very familiar with professionals such as doctors, teachers, nurses, firefighters and policemen, they are rarely introduced to engineers. With this motivation, the authors developed a novel children’s book on engineering: Engineering Elephants. This book is an outreach tool that introduces children to the dynamic world of engineering design through roller coasters, fireworks, and a plethora of other exciting adventures. The book teaches children about relevant topics such as nanotechnology, renewable energy, and prosthetics by engaging them through an interactive journey of an elephant and his questioning of the world around him. The text was strategically developed using the language of science (asking questions) and introducing vocabulary relevant to science and math using a lyrical pattern. This presentation will highlight the development of this book as an instructional aid but also detail the response of various age groups to engineering activities presented as a companion to this book. In particular, an elementary school district in West Texas designed a 4-5th grade 3-week summer school curriculum around this book. Results from this study will have an impact on future generations by inspiring them to consider the exciting profession of engineering at an early age.

A study is presented on nanocrystalline diamond (NCD) growth on different substrates, including silicon with and without different metallic interlayers, on aluminum nitride (AlN), and on a Si/AlN-based cantilever. It is shown that non-diamond substrate treatment prior to NCD growth is important for achieving high nucleation densities. AFM measurements reveal that an additional Si surface pretreatment with hydrogen plasma increases the nucleation density by a factor of four. A similar effect was indirectly demonstrated with acidic pretreatment of AlN. In both cases it is believed that the surface roughening is the key factor for explaining this phenomenon.

The microstructure and compression response of a quaternary Mo-Nb-Si-B alloy has been examined in in the temperature interval 1200°C-1600°C and in the strain rate regime 10–4 s–1 to 10–6 s–1 and compared to earlier results on the ternary Mo-Si-B alloys The microstructure is composed of a three-phase microlamellar eutectic composed of the Mo-Nb solid solution phase, the T1 and the T2 intermetallic phases. Compression test confirm significantly superior creep resistance for the eutectic alloy compared to the ternary Mo-rich Mo-Si-B alloys with virtually no microstructural degradation.

The work presents the model for the ionic thermoelectric phenomenons, which is based on the consideration of Grotthuss, hopping mechanism for the proton conductivity. The Seebeck coefficient and figure of merit are estimated in good agreement with experimental data.

We have investigated a correlation between electronic deep levels and current collapses in AlGaN/GaN hetero-structures by capacitance-voltage and photo-capacitance spectroscopy techniques, using Schottky barrier diodes. Three specific deep levels located at ~2.07, ~2.80, ~3.23eV below the conduction band were found to be significantly enhanced for the severe current collapse. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapses of the AlGaN/GaN hetero-structures.

The origin of sub-diffraction-limit apertures in Sb-based thin films is discussed. Electromagnetic energy can be channeled by these apertures thus allowing near-field focussing- the Super-RENS effect. The aperture formation within Sb, Sb2Te3, Sb2Te, SbTe and Ge2Sb2Te5 is investigated by time resolved optical pump-probe techniques and found to occur without melting. Density functional calculations have shown that these materials exhibit a thresholdlike change in their optical properties below their melting temperatures. The threshold is shown to be a consequence of thermally induced misalignment of p-orbital bonds. It is the non-linearity of this process that leads to the formation of the sub-diffraction-limit apertures.

Intermetallic TiAl-alloys can replace the heavier Ni-based superalloys in several high temperature applications with regards to their mechanical properties, however they can not be used at temperatures above 800°C in oxidizing environments for longer times because of insufficient oxidation resistance. Despite an Al-content of about 45 at.% in technical alloys, no protective alumina layer is formed because the thermodynamic stabilities of titanium oxide and aluminum oxide are of the same order of magnitude. Therefore a mixed TiO2/Al2O3-scale is formed which is fast growing so that the metal consumption rate is quite high. On the other hand the formation of a slow growing alumina layer is promoted by a fluorine treatment. This so called fluorine effect leads to the preferential intermediate formation of gaseous aluminum fluorides at elevated temperatures if the fluorine content at the surface stays within a defined concentration range. These fluorides are converted into solid Al2O3 due to the high oxygen partial pressure of the high temperature service environment forming a protective pure Al2O3 surface scale. In this paper results of high temperature oxidations tests of several technical TiAl-alloys will be presented. Different F-treatments e.g. dipping or spaying which are easy to apply have been used and their results will be compared. The mass change data of the F-treated specimens are always lower than those of the untreated ones. Post experimental investigations such as light microscopy, scanning electron microscopy and energy dispersive X-ray analysis reveal the formation of a thin alumina layer on the F-treated samples after optimization of the process while a thick mixed scale is found on the untreated samples. The results will be discussed in view of an optimized procedure and the future use of TiAl-components in high temperature environments.