To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure no-reply@cambridge.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
AlN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N2/(N2 + Ar) flow ratios. To investigate the nitrogen function, the ratio of nitrogen ambient was varied during cosputtering. AlN codoped ZnO films with various crystallographic structures and bonding configurations were measured. With an adequate nitrogen atmosphere deposition condition and postannealing temperature at 450 °C, the p-type conductive behaviors of AlN codoped ZnO films were achieved due to the formation of Zn–N bonds. According to the low-temperature photoluminescence spectra, the binding energy (EA) of 0.16 eV for N acceptors can be calculated. Using time-resolved photoluminescence measurement, the carrier lifetime in AlN codoped ZnO films increases due to the reduction of oxygen vacancies caused by the occupation of adequate nitrogen atoms.
As potential substitutes for traditional Ti(Zr)–Cu–Ni-based brazing metals for high strength Ti alloys as well as a study for metallic glass, Zr–Ti–Ni-based alloys have been attracting much attention recently. In this study, the melting temperatures and microstructures of the Zr(Ti)-rich Zr–Ti–Ni alloys with Ni content below 33.3 at.% were systematically studied. A ternary deep eutectic alloy consisting of three phases was found at the composition of Zr50Ti26Ni24 with a solidus temperature of 798 °C and a liquidus temperature of 809 °C, which are significantly lower than the Zr2Ni–(Zr,Ti)2Ni pseudobinary eutectic melting temperature of 850 °C. This ternary eutectic reaction can be presented as L → α-(Zr/Ti) solid solution + Zr2Ni + ternary Laves (Zr,Ti)2Ni.
This study reports the synthesis of monosized Pr nanoparticles with a controllable size ranging from 5 to 20 nm. Pr agglomerates generated by a spark generator first size-selected by a differential mobility analyzer and subsequently sintered in-flight at different temperatures result in spherical and monocrystalline Pr nanoparticles. The dependence of size and size distribution of Pr nanoparticles has been studied as a function of deposition parameters related to spark generator, differential mobility analyzer, and sintering. Transmission electron microscopy, energy-dispersive x-ray analysis, glancing angle x-ray diffraction, and x-ray photoelectron spectroscopy studies confirm that initial Pr agglomerates and the resulting nanoparticles are metallic with d-hexagonal structure and remain stable in air during post-deposition exposure. Incomplete or partially sintered nanoparticles were found to be oxidized, resulting in the formation of amorphous oxide phase due to enhanced oxidation at grain boundaries.
Tarnishing film was developed on the brass surface in Mattsson's solution at room temperature. The filmed brass was removed from the solution, dried, and subjected to a slow strain rate (loading speed = 0.5 mm/min) in air for studying the effect of the film on crack propagation in the brass substrate. It was observed that initial cracks started to emerge in the film and then propagated to the brass matrix in a brittle intergranular manner. However, it changed into a ductile mode after removing the deposited film. The galvanic current between platinum wire and filmed brass sample in Mattson's solution was investigated. The results showed that periodic current fluctuations were observed when the sample was under a constant applied load. These observations showed that the film rupture-formation occurred at cracks under the stress-corrosion cracking condition.
The electron energy structure of self-assembled In(Ga)As/GaAs nanostructures, quantum dots, and quantum rings was studied with capacitance-voltage spectroscopy and one-dimensional numerical simulation using Poisson/Schrödinger equations. The electron energy levels in the quantum dots and quantum rings with respect to the electron ground state of the wetting layer were determined directly from capacitance-voltage measurements with a linear lever arm approximation. In the regime where the linear lever arm approximation was not valid anymore (after the charging of the wetting layer), the energy difference between the electron ground state of the wetting layer and the GaAs conduction band edge was obtained indirectly from a numerical simulation of the conduction band under different gate voltages, which led to the erection of complete electron energy levels of the nanostructures in the conduction band.
In this study, p-type CuInSe2 (CIS) films were prepared by selenization of one-step electrodeposited Cu-In-2Se (atomic ratio) precursors. To obtain high-quality, dense, and homogeneous CIS films for solar cell application, the effects of substrate temperatures during selenization and precursor compositions on the final microstructures were systematically investigated. The precursor layers evolved in very different ways under different selenization conditions. The final microstructures and phases of the films depended critically on the precursor compositions, selenization temperature, and the selenization thermal process history. Low melting temperature CuxSe phase, which tended to segregate at the film surface, can efficiently assist the CIS grain growth. Large hexagonal CuSe platelets were formed at a temperature as low as 170 °C in Cu-rich precursor, which acted as an element-transport flux agent at higher temperature under high Se vapor and reacted with In-Se selenide to form CIS at temperatures above 500 °C. Good crystalline quality chalcopyrite CIS film was obtained at a selenization temperature of 550 °C.
The effect of melt temperature on the structure and mechanical properties of three Zr-based bulk metallic glasses (BMGs)—Zr62Cu17Ni13Al8, Zr55Cu20Ni10Al10Ti5, and Zr52.5Cu17.9Ni14.6Al10Ti5 (Vit105)—has been studied. The results show that the BMGs cast from higher melt temperature exhibit large plastic strains despite their amorphous structure. The samples become macroscopically brittle when the quenched-in crystals form an interconnected microstructure. In contrast to previous studies, there is no notable effect on the Poisson’s ratio (ν) and other elastic constants.
The effects of the fatigue deformation on the localized deformation of a ZCAP-3 bulk metallic glass (BMG) were studied using the nanoindentation technique. A localized mechanical hardening was observed in the ZCAP-3 BMG between the shear bands in the fatigue-damaged zone. In contrast to the indentations of the BMG made far away from the fatigue-damaged zone, there was no indentation size effect. Both the reduced contact modulus and the indentation hardness were larger than those corresponding to the indentations of the ZCAP-3 BMG in the undamaged zone. These observations revealed the possible effects of local heating and stress-induced atomic rearrangements (i.e., inelastic deformation) on the reduction of the free volume in the BMG from the propagation of the fatigue crack.
The uniaxial compressive deformation of core/shell-type Cu/Ag nanoparticles and naked Cu nanoparticles were simulated by molecular dynamics, revealing the role of nanophase boundaries in the mechanical deformation. The simulations show that single type of partial dislocations glide across the entire slip planes of the Cu cores, resulting in elongated Cu cores compared with circular Cu cores of naked Cu nanoparticles. The phase boundary is the nucleation source of dislocations, and the ultrahigh atomic level stress of part atoms in the phase boundary can ensure the movement of the single type of dislocations under compressed.
Inorganic potassium dihydrogen phosphate (KDP) is widely known for its value as a nonlinear optical material. In this study, pure and l-arginine–doped KDP single crystals were grown by the slow solvent evaporation technique and further subjected to infrared absorption and Raman studies for the confirmation of chemical group functionalization and possible bonding between the organic and inorganic materials. The appearance in the infrared absorption spectra of additional vibrational lines, which mostly originate from disturbed N–H, C–H, and C–N bonds of the l-arginine–doped salt, confirm the interaction between KDP and the organic material. This affirmation is supported by more evidence from Raman measurements, where the disappearance of NH vibrations of the amino group is observed. We are thus led to the possibility of hydrogen bonding primarily between the nucleophilic O− of the phosphate unit of KDP and the amino group of the l-arginine.
Formation and evolution details of a two-phase coupled microstructure in AISI 304 stainless steel are studied by quenching method during directional solidification. Results show that the coupled growth microstructure, which is composed of thin lath-like ferrite (δ) and austenite (γ), crystallizes first in the form of colony from the melt. As solidification develops, the retained liquid transforms into austenite gradually. On cooling, solid-state transformation from ferrite to austenite results in the disappearance of part thinner ferrites and the final two-phase coupled microstructure is formed after the solid-state transformation. The formation mechanism of the two-phase coupled microstructure is analyzed based on the nucleation and constitutional undercooling criterion (NCU) before steady-state growth of each phase is reached.
Research in n-channel field-effect transistors based upon III–V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel material in 1–2% compressive strain. The strain modifies the valence band structure, resulting in hole mobilities as high as 1500 cm2/Vs. The next steps toward an ultra-low-power complementary metal oxide semiconductor technology will include development of a compatible insulator technology and integration of n- and p-channel transistors.
The stable superparamagnetic colloidal suspension of chitosan-poly(acrylic acid) (CS-PAA)/Fe3O4 nanoparticles was synthesized by graft copolymerization AA on the surface of CS stabilized Fe3O4 nanoparticles. The size, size distribution, structure, and magnetic properties of the resultant CS-PAA/Fe3O4 nanoparticles were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscope (TEM), dynamic light scattering, Fourier transform infrared spectroscopy, x-ray diffraction, and vibrating sample magnetometry (VSM). FE-SEM and TEM showed the spherelike morphology of CS-PAA/Fe3O4 nanoparticles with their diameter ranging from 15 to 60 nm. VSM measurements indicated that CS-PAA/Fe3O4 nanoparticles preserved the superparamagnetism. CS-PAA complex was proved to be a good stabilizer to prepare the well-dispersed suspension of superparamagnetic Fe3O4 nanoparticles. The stabilizing mechanisms were attributed to the electrostatic repulsion and steric hindrance. The controlled release of entrapped camptothecin from these magnetic nanoparticles was studied and the release mechanism was analyzed.
The electronic transport and magnetic properties of nanocomposites, in which nanoparticles of superconducting (SC) molybdenum carbides are embedded in a ferromagnetic (FM) carbon matrix to form a three-dimensional SC-FM network, are studied. The high-resolution transmission electron microscope observation shows that the carbon in the nanocomposites is in both ordered and disordered forms. The magnetic properties of the nanocomposites are ruled by the ferromagnetic carbon matrix. The temperature dependence of electrical resistivity of the nanocomposites is dominated by the carbon matrix, showing the semi-conductivity. The special I-V curves near the zero voltage bias of the nanocomposites are observed at low temperatures, due to the influence of contact barriers between molybdenum carbides and the carbon matrix.
Turnbull performed much experimental and theoretical research on nucleation and on fundamental aspects of phase transformations in condensed matter. Nucleation of precipitates followed in parallel or sequentially by their growth and coarsening is a complex scientific subject and technologically highly relevant because of the many critical roles played by structural metallic alloys and their relevance to the energy problem. The focus herein is on nucleation, growth, and coarsening of precipitates employing atom-probe tomography, lattice kinetic Monte Carlo simulations, and diffusion theory, which constitute a unique approach for studying phase separation in concentrated multicomponent alloys.
Various α-GaOOH nanorods were synthesized through a microwave-assisted method at 80 °C. In the synthesis, Ga(NO3)3 was used as the gallium source, and urea, L-cysteine, and EDTA disodium salt were used as the additives. The thermal decomposition of the as-prepared α-GaOOH nanorods could selectively produce α-, β-, and ε-Ga2O3 nanorods. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and cathodoluminescence were used to characterize the resulting samples. On the basis of characterization results, the possible growth mechanisms of these various GaOOH nanorods were proposed. This study provides a controllable method to prepare various gallium oxyhydroxide and gallium oxide nanorods.