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High dielectric tunability, low dielectric loss tangent and appropriate level of dielectric constant are the basic requirements for applications as electrically tunable dielectric microwave devices. In our experiments, the SrTiO3 green compacts made of the powder mixtures with various particle sizes were infiltrated with a BaTiO3 precursor solution and sintered at different temperatures between 1280 and 1350 ºC for 2 hours and 1350 ºC for 6 hours. The sintering, microstructural and dielectric properties were investigated. Results showed that the relative density of SrTiO3 ceramics could reached 93% when sintered at 1280 ºC for 2 hours. When sintered for 6 hours at 1350 °C, the room temperature dielectric constant of SrTiO3 reaches 900 at a frequency of 1MHz. It has only weak temperature dependence between 100 and 500K. The reason of the low sintering temperature for the dense SrTiO3 ceramics and the effects of sintering scheme on the dielectric properties from 100 K to 500 K are discussed in this paper.
The nanoscale physical properties of newly electrospun polyamide nanofibrillar matrices < 1 year old versus those that were > 3 year old were investigated with transmission electron microscopy, selected area electron diffraction, contact angle measurements, and Raman spectroscopy. Significant differences in crystallinity, hydrophobicity, and chemistry were found and correspondingly different cell responses by cerebellar granular neurons were observed. The properties of the aged nanofibrillar scaffolds evoked a response for neuron burrowing into a more 3-dimensional environment in addition to better facilitation of neurite outgrowth. The nanophysical properties of tissue scaffolds have been recently shown to directly and indirectly regulate cellular responses. As physical properties can evolve over time, the present investigation addresses the issue of tissue scaffold shelf life, with possible changes in directive signals to cells.
We present a model for organic bistable devices (OBDs) embedded with metallic nanoparticles. In particular, two device architectures have been studied: a single layer device with metallic nanoparticles dispersed in a organic material matrix and a three layer device where two organic material regions are separated by a layer of heavy packed nanoparticles. The model describes the different behavior, the internal charge and potential distributions in the ON-OFF states. The OFF state is represented by charged nanoparticles forming a space charge layer which limits the current. The ON state occurs with neutral nanoparticles.
In this paper, we studied the optimization of preparation for polymeric optical waveguide based bus structures with embedded 45 degree micro-mirrors by metallic hard mold method. The 45º facets on the metallic hard mold, which were used to create the 45 degree micro-mirrors, were studied by the atomic force microscopy (AFM). The surface roughness of the 45 degree facets was reduced from 70nm to be 2nm by a photopolymer coating step. High speed test on the waveguide shows the low loss and high Q-factor performance of the waveguide structures. A backplane bus with 10 Gbits/sec channel will be reported.
The effect of silver nanoparticles showing localised plasmonic resonances on the efficiency of thin film silicon solar cells is studied. Silver (Ag) nanodiscs were deposited on the surface of silicon cells grown on highly doped silicon substrates, through hole-mask colloidal lithography, which is a low-cost and bottom-up technique. The cells have no back reflector in order to exclusively study the effect of the front surface on their properties. Cells with nanoparticles were compared with both bare silicon cells and cells with an antireflection coating. We optically observe a resonance showing an absorption increase controllable by the disc radius. We also see an increase in efficiency with respect to bare cells, but we see a decrease in efficiency with respect to cells with an antireflection coating due to losses at wavelengths below the plasmon resonance. As the material properties are not notably affected by the particles deposition, the loss mechanism is an important absorption in the nanoparticles. We confirm this by numerical simulations.
This work study the effect on aging thermal treatment on micro-alloyed steels API X70 pipe, microstructure and mechanical properties such a yield strength (Y), hardness (Hv) and Young´s modulus (E) are presented in this work. Thermal treatment consists of two phases: i) The solution treatment introducing samples in a electric induction furnace at 1100 °C for 30 min under argon atmosphere and water quenching, ii) aging process for five temperature in the range between 204 to 650 °C for 30 min of time exposition and water quenching, respectively. The microstructural characterization was examined by optical microscopy and matrix samples aging showed microstructures like acicular ferritic, polygonal ferritic and bainitic-ferritic, and the secondary phases were examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) obtained by SEM evidencing the presence of precipitates composed of vanadium (V), niobium (Nb) and titanium (Ti). The mechanical properties were evaluated by depth sensitive indentation test at the samples aging, the results showed increase of the (Hv) and (E)to the conditions of low temperature aging.
Convenient preparation of nano/micro scale topography is crucial for the fabrication of low-cost biodevices, which could be useful tools for understanding cell biology mechanisms and for the development of scaffolds for tissue engineering. Such intelligent surfaces have been conventionally fabricated through photolithography, micro-contact printing, and nano/micro imprinting. However, considering the process integration, these approaches are not always adequate in order to produce large dimensional patterns in a convenient and rapid way. In this study, we focused on the convenient fabrication of nano-wrinkles based on the elastic instability between a shape memory polymer sheet and a conductive polymeric film, on which the behavior of murine skeletal muscle cells (C2C12) was evaluated. A tens-of-nm-thick layer of poly(3,4-ethylenedioxythiophene) with poly(styrenesulfonate) (PEDOT:PSS) was spincoated on a thermo-retractable polymer sheet. Then, thermal treatment produced different periodicity of the unidirectional nano-wrinkles on the polymer sheet covered with different thickness of PEDOT:PSS layer. Finally, adhesion and proliferation of C2C12 were evaluated, comparing different samples. The cells preferentially adhered and anisotropically aligned on low and narrow ridges (1.5 μm height) rather than on high and wide ones (2.5 μm height). Furthermore, we observed that these trends were confirmed in the differentiation stage of C2C12 into myotubes. The combination of living cells and tunable nano-wrinkles made of conductive polymeric materials will represent a unique tool for the development of innovative biomedical devices.
Despite the many superior attributes of diamond, electronic device performance to date has fallen well behind theoretical expectation. The potential realization of highly efficient electronic polycrystalline diamond devices has been more than limited by certain technological challenges such as maintaining efficient/shallow n-type doping without higher density of defects or incorporation of sp2 bonded carbon as a result of doping(during ion implantation process). Specific n-type diamond reports demonstrating phosphorus doping (with activation energy reported in the range of 485 meV to 600 meV in (100) oriented systems have been particularly problematic as a lower solubility is found as compared to (111) oriented synthesis efforts, in addition to the reported self-compensating nature. Amongst the previous reports of Phosphorus-doped diamond nearly all experimental reports to date show visual crystallographic dislocation/pitting on the (100) facet with even moderate doping where dislocations have been observed to be incorporated into the bulk volume during growth. These dislocations, which are known carrier scattering sites, subsequently lower mobility rendering poor conductance and high resistivity. Due to this well-known sensitivity of phosphorus incorporation to the crystal quality, typically lower in polycrystalline than homoepitaxial films, polycrystalline-based experimental reports have been largely absent. With respect to Phosphorus in-situ doping based efforts, rendered films demonstrate both the visually identifiable pitting and electronically identifiable poor conduction characteristic, and with respect to ion beam doping efforts, complete graphitic flaking at even moderate doses (i.e. greater than 3x1017cm−3). Motivated by these shortcomings and the success of recent experimentation, we present the methodology and data from our recent successful fabrication of polycrystalline diamond P+-i-N junction (diode) with high crystal quality, high power handling capability, high current density, low threshold voltage, and ohmic contact, under room temperature operation, previously undemonstrated across all diamond material types. The superior electrical performance of the device was obtained by novel ion beam methodology designed to resolve previously unaddressed issues relating to n-type doping of diamond materials. A high current density of approximately 104 A/cm2 is attained at 20V forward bias.
Spatial fluctuations of the microstructure suggest possible self-organized criticality in the Portevin–Le Chatelier plastic instability occurring in age-hardenable alloys. The discontinuous yielding found in a supersaturated Al alloy can be characterized by a universal power-law spectrum that is independent of the experimental conditions. The result provides an explanation for the formation of unexpected detrimental strain localizations when samples are severely deformed, giving a framework for studying the simultaneous effects of solute atoms and precipitates in the decomposition of solid solutions.
Porous platinum thin films were prepared by thermal decomposition at temperatures from 25 to 675 °C of platinum oxide films deposited by a pulsed reactive sputtering technique. The samples’ chemistry and structure were investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and x-ray absorption near edge structure (XANES), showing that the decomposition of the oxide begins as low as 400 °C and follows a sigmoidal trend with increasing annealing temperature. In the XRD spectra, only an amorphous-like signature was observed for temperatures below 575 °C, while Pt 4f XPS showed that the deposited oxide was a mixture of PtO2 and PtO. Pt-L3 edge XANES and Pt 4f XPS spectra showed that the Pt concentration and electronic structure are predominant for temperatures equal to or above 575 °C. The morphologies of the films were investigated by the area-perimeter method from atomic force microscopy and scanning electron microscopy (SEM) images, indicating that the surfaces exhibit a combination of Euclidian and fractal characteristics. Moreover, the thermal evolution of these characteristics indicates the agglomeration of the grains in the film as observed by SEM.
We use the first-principles GW + Bethe–Salpeter equation approach to study the electronic structure and optical absorption spectra of uniaxial strained graphene. Applied strain induces an anisotropic Fermi velocity and tilts the axis of the Dirac cone. As a result, the optical response of strained graphene is dramatically changed; the optical absorption is anisotropic; the characteristic single optical absorption peak of pristine graphene is split into two peaks with enhanced excitonic effects. Within the infrared regime, the optical absorbance of uniaxial strained graphene is no longer a constant because of the broken symmetry and anisotropic excitonic effects. Within the visible-light regime, we observe a prominent optical absorption peak due to an enhanced red shift by electron–hole interactions, enabling us to change the visible color and transparency of stretched graphene. Finally, we also reveal enhanced excitonic effects within the ultraviolet regime, where a few nearly bound excitons are identified.
Bulk ceramics In2−xGexO3 have been synthesized in air by using citrate gel process. Nanoparticles of less than 20 nm have been synthesized through an accurate control of the processing parameters. X-ray diffraction and scanning electron microscopy studies confirmed that the solubility limit of Ge in In2O3 (xℓ) is very small and that additions of more than about 0.5 at.% Ge lead to the presence of In2Ge2O7 inclusions. Thanks to a high interdispersion of metal ions and homogeneity in elemental composition of the nanopowders obtained by citrate gel process, well-dispersed In2Ge2O7 secondary phases can be formed in the Ge-doped In2O3 matrix. An abrupt increase in the electrical conductivity and in the carrier concentration with x is observed in the monophasic region (x < xℓ), whereas in the biphasic region (x > xℓ), these values do not vary significantly. Similarly, the thermopower |S| value is correlated to this variation decreasing as x increases for x < xℓ. Above the solubility limit, the decrease in the lattice thermal conductivity is shown to be dependent on the presence of well-dispersed In2Ge207 secondary phases. The dimensionless figure of merit value is increased up to 0.3, thanks to electron doping and phonon scattering.
The Bosch process is a high-speed, deep reactive ion etching technology for silicon, which has both excellent flexibility and selectivity. For better understanding and control of the time evolution of the feature profile during the Bosch process, an accurate, predictive, and fast simulation tool would be useful. In this article, a simplified model for three-dimensional simulation of the Bosch process is proposed. Etching is modeled by an isotropic etching rate superposed by an anisotropic term. For the passivation cycle, a perfect conformal deposition is assumed corresponding to a constant deposition rate. Level set method was used for tracking the surface evolution. Since the etching and deposition rates are the model input parameters which are not computed, the computational time is significantly reduced. Calculation results presented here illustrate some typical applications of the Bosch process.
Two kinds of type-II heterostructures (HSs) of ZnO (wurtzite)/ZnSe (wurtzite) [ZnO (WZ)/ZnSe (WZ)] and ZnO (wurtzite)/ZnSe (zinc blende) [ZnO (WZ)/ZnSe (ZB)] were designed for photovoltaic applications by first-principle calculations. The calculated effective bandgap of 1.51 eV for the ZnO (WZ)/ZnSe (WZ) HS is more favorable for solar cell applications compared to that of 1.69 eV for the ZnO (WZ)/ZnSe (ZB) HS. Furthermore, the electrons and holes are more effectively separated at the interface of ZnO (WZ)/ZnSe (WZ) HS due to the stronger misfit stress field. Finally, a strained ZB ZnSe layer was introduced to transport the separated holes from WZ ZnSe layer, and an optimal structure of ZnO (WZ)/ZnSe (WZ)/ZnSe (ZB) was proposed to realize a solar cell with near-infrared response.
The residual stress in Al–Cu–Fe–B quasicrystalline thin films has been characterized by x-ray diffraction and the curvature method. Films with thicknesses in a range from 0.55 to 2.6 μm were deposited using magnetron sputtering on Si(100) substrates maintained at a temperature of 560 °C. It is found that the tensile stress in uncracked films as determined by the curvature method is close to that measured by a modified sin2ψ method using main diffraction peaks of the icosahedral structure and corresponds approximately to 1.1 GPa. This value is close to that of the thermal stress estimated from the mismatch between thermal expansion coefficients of the film and substrate, suggesting that thermal stress is the main source of residual stress. Increasing film thickness results in the development of cracks and partial delamination of the film, accompanied by the sudden decrease of the stress. The fracture toughness of the quasicrystalline films is estimated between 1.5 and 1.9 MPa.
Nanowires have attracted tremendous research interests due to their potential applications. Their mechanical properties are critical for the reliability and durability of the nanowire-based devices. Compared to many other characterization techniques, the lateral probing of a nanowire using nanoindentation has the advantage of relatively simple sample preparation. However, the data analysis is difficult due to the complex contact mechanics. In all previous studies, some questionable approximations have been made to proceed with data analysis. In this study, a quantitative physical picture of nanowire lateral probing is proposed, which we believe is the first time in the literature. Three-dimensional finite element analysis (FEA) is performed and compared to a double-contact analytical model in which the two contacts, namely contact 1 (indenter/nanowire) and contact 2 (nanowire/substrate), are considered. Both the FEA and analytical models are for a specific case: an elastic spherical indention of a GaN nanowire on a Si substrate. We find that contact 1 cannot be well approximated by a Hertzian elliptical contact as assumed in many studies. We also find a large contact deformation at contact 2, which has been ignored in almost all previous studies. Finally, the adhesion condition and nanowire-receding at contact 2 are found to have insignificant effects on the data analysis.
The Fe64B22.8Nd6.6Y3.9Nb2.7 nanocomposite permanent magnets in the form of rods of 2 mm in diameter and 25 mm in length have been prepared by annealing the amorphous precursors. The phase evolution, microstructure, and magnetic properties of Fe64B22.8Nd6.6Y3.9Nb2.7 nanocomposite permanent magnets have been investigated by x-ray diffractometry, transmission electron microscopy, and magnetometry techniques. The exchange coupling between the magnetically soft and hard magnetic phase is evidenced by the δM curves. The hard magnetic properties of the nanocomposites were found to be sensitive to the annealing process. The microstructure of the annealed nanocomposite consists of magnetically soft α-Fe (15–25 nm) and Fe3B (25–35 nm) grains and hard magnetic Nd2Fe14B (45–55 nm) grains. The optimum hard magnetic properties, such as jHc = 961.6 kA/m (12.0 kOe), Br = 0.65 T (6.5 kG), and BHmax = 65.17 kJ/m3 (8.19 MGOe), were obtained by annealing the alloy at 700 °C for 15 min and are related to the more refined nanostructure leading to strong exchange coupling between the soft and hard magnetic grains. Annealing above 700 °C induces a decoupling effect due to the coarsening of soft and hard magnetic phases.