Introduction: Patients with advanced malignant and non-malignant disease (advanced disease—AD) who do not want or benefit from aggressive resuscitation may unfortunately receive such treatments if unable to communicate in an emergency. Timely access to patients’ resuscitation wishes is imperative for treating physicians and for medical information systems. Our aim was to determine what proportion of emergency department (ED) patients with AD have accurate, readily accessible resuscitation status documentation. Methods: This cross-sectional, prospective study was conducted at a tertiary care ED during purposefully sampled random accrual times in summer 2016. We enrolled all patients with: 1) palliative care consultation, 2) metastatic malignancy, 3) COPD or CHF on home oxygen, 4) hemodialysis, or 5) advanced neurodegenerative disease/dementia. The primary outcome was the retrieval of any existing resuscitation status documents. Documentation was obtained from a standardized review of forms accompanying the patient (“arrival documents”) and electronic medical record (“EMR”). We measured the time to retrieve this documentation, and interviewed consenting patients to corroborate documentation with their current wishes. Results: Of 85 enrolled patients, only 33 (39%) had any documentation of resuscitation status: 28 (33%) had goals of care retrieved from the hospital EMR, and 11 (15%) from arrival documents (some had both). Patients from long-term care facilities were more likely to have documentation available (odds ratio 13 [95% CI 2.5-65] vs community-living). Of 32 patients who were able to be interviewed, 20 (63%) expressed “do not resuscitate” wishes. Ten of these 20 lacked any documents to support their expressed resuscitation wishes. Previously expressed resuscitation wishes took more than 5 minutes to be retrieved in 3 cases when not filed “one click deep” in our EMR. Conclusion: The majority of patients with AD, including half of those who would not wish resuscitation from cardiorespiratory arrest, did not have goals of care documents readily available upon arrival to the ED. Patients living in the community with AD appear to be at high risk for unwanted resuscitative treatments should they present to hospital in extremis. Having documentation of their goals of care that is easily retrievable from the EMR shows promise, though issues of retrieval, accuracy, and validity remain important considerations.

The importance of Meganyctiphanes norvegica (M. Sars) as a source of vitamin A for its predators has been demonstrated by Fisher, Kon & Thompson (1955). Basing their conclusions on the observations of Macdonald (1927) on the feeding of M. norvegica in Loch Fyne, Fisher, Kon & Thompson (1954) and Kon (1954) suggested a possible scheme of accumulation of vitamin A in the animal. They also made cursory examinations of the stomach contents from animals caught in the same area and their findings appeared to agree fairly well with those of Macdonald, except that from his results he concluded that phytoplankton was a major item in the diet. This conclusion has been disputed by Einarsson (1945) who called for more detailed investigation of fresh material in order to obtain a clearer picture of the feeding of north Atlantic euphausiids. Such information would be of great value in the study of the vitamin A chain in the plankton. We have, therefore, examined the stomach contents of M. norvegica over nearly two years to try to detect every type of food that might be eaten. In addition to our own survey, Dr J. Mauchline (1959) of the Marine Station, Millport, made a more intensive study of the food in relation to the diurnal migrations in July and November.

The ClOVER instrument (described elsewhere in this volume) isbeing built to measure the B-mode polarisation of the Cosmic MicrowaveBackground. Each of the 256 pixels is made up a pseudo-correlationreceiver that can be realised using either waveguide or microstriptechnology. In this work we present a design study for a possiblewaveguide-based solution. Each of the individual components has beenoptimised using electromagnetic finite-element modelling software(HFSS).

We present a new, fully-funded ground-based instrument designed to measurethe B-mode polarization of the Cosmic Microwave Background (CMB). The conceptis based on three independent sub-systems operating at 90, 150 and 220 GHz,each comprising a telescope and a focal plane of horn-coupled background-limited bolometers. This highly-sensitive experiment, planned to be based at Dome C station in Antarctica, is optimised to produce very low systematiceffects. It will allow the detection of the CMB polarization over angular multipoles 20<l<1000accurately enough to measure the B-mode signature from gravitationalwaves to a lensing-confusion-limited tensor-to-scalar ratio r ~ 0.005.

Moderately and heavily Mg-doped GaN were studied by a combination of post-growth annealing processes and electron beam irradiation techniques during cathodoluminescence (CL) to elucidate the chemical origin of the recombination centers responsible for the main optical emission lines. The shallow donor at 20–30 meV below the conduction band, which is involved in the donor-acceptor-pair (DAP) emission at 3.27 eV, was attributed to a hydrogen-related center, presumably a (VN -H) complex. Due to the small dissociation energy (<2 eV) of the (VN -H) complex, this emission line was strongly reduced by low-energy electron irradiation. CL investigations of the DAP at a similar energetic position in Si-doped (n-type) GaN indicated that this emission line is of different chemical origin than the 3.27 eV DAP in Mg-doped GaN. A slightly deeper DAP emission centered at 3.14 eV was observed following low-energy electron irradiation, indicating the appearance of an additional donor level with a binding energy of 100–200 meV, which was tentatively attributed to a VN -related center. The blue band (2.8–3.0 eV) in heavily Mg-doped GaN was found to consist of at least two different deep donor levels at 350±30 meV and 440±40 meV. The donor level at 350±30 meV was strongly affected by electron irradiation and attributed to a H-related defect.

Molecular beam epitaxy-grown GaN with different Mn concentrations (5–23 × 10 cm-3) and codoped with Si were investigated by cathodoluminescence (CL) spectroscopy and optical transmission measurements. In the GaN:Mn, an intense absorption peak at 1.414 +/- 0.002 eV was observed. This peak was attributed to an internal T2∼> E transition of the deep neutral Mn3+ state since its intensity scaled with the Mn3+ concentration. The CL measurements showed that Mn-doping concentrations around 1020 cm-3 had three effects on the emission spectrum: (i) the donor bound exciton at 3.460 eV was reduced by more than one order of magnitude, (ii) the donor-acceptor-pair band at 3.27 eV was completely quenched and (iii) the yellow luminescence centered at 2.2 eV was the strongly decreased. The latter two effects were attributed to a reduced concentration of VGa. In the infrared spectral range, three broad, Mn-doping related CL emission bands centered at 1.01 ± 0.02 eV, 1.09 ± 0.02 eV and 1.25 ± 0.03 eV were observed. These bands might be related to deep donor complexes, which are generated as a result of the heavy Mn-doping, rather than internal transitions at the Mn atom.

CL spectroscopy studies at varying temperatures and excitation power densities as well as depth-resolved CL imaging were conducted to investigate the impact of low energy electron beam irradiation (LEEBI) on native defects and residual impurities in metal-organic vapor phase epitaxy (MOVPE) grown Mg-doped p-type GaN. Due to the dissociation of (Mg-H)0 complexes, LEEBI significantly increases the (e,Mg0) emission (3.26 eV) at 300 K and substantially decreases the H-Mg donor-acceptor-pair (DAP) emission (3.27 eV) at 80 K. In-plane and depth-resolved CL imaging indicates that hydrogen dissociation results from electron-hole recombination at H-defect complexes rather than heating by the electron beam. The dissociated hydrogen atoms associate with nitrogen vacancies, forming a deeper donor, i.e. a (H-VN) complex. The corresponding deeper DAP emission with Mg centered at 3.1 eV is clearly observed between 160 and 220 K. Moreover, a broad yellow luminescence (YL) band centered at 2.2 eV is observed in MOVPE-grown Mg-doped GaN after LEEBI-treatment. It is suggested that a combination of LEEBI-induced Fermi-level downshift due to Mg-acceptor activation and simultaneous dissociation of gallium vacancy-impurity complexes, i.e. (VGa-H), is responsible for the observed YL.

Raman scattering (RS) spectroscopy is employed to characterize the effect of nitrogen on structural properties of GaNxP1-x alloy with nitrogen composition up to 3 %. Two-mode behavior of the alloy is clearly shown. The frequency of the GaP-like LO phonons is found to decrease with N composition as –1.13 cm-1x. This dependence is proposed to be largely due to the biaxial strain in the GaNP epilayers, as a result of lattice mismatch to the GaP substrate. The frequency of the GaN-like phonons is found to be more sensitive to nitrogen content, increasing with the rate of +2.6 cm-1x. The addition of nitrogen is also found to cause a dramatic quenching of the two-phonon Raman scattering and an appearance of the zone edge GaP-like vibrations. These effects are suggested to reflect local distortion in the GaNP lattice induced by nitrogen, as well as possible clustering of N atoms.

In this paper we evaluate the in-depth homogeneity of GaN epilayers and the influence of electric field present in strained GaN/AlGaN heterostructures and quantum wells on the yellow and “edge” emission in GaN and AlGaN. Our depth-profiling cathodoluminescence measurements show an increased accumulation of defects at the interface. Inhomogeneities in the doping level are reflected by the enhancement of the yellow emission in the interface region. The piezoelectric effect is found to strongly reduce the emission from the strained AlGaN quantum-well barriers. We also show that Ga droplets, commonly found on surfaces of samples grown in Ga-rich conditions, screen the internal electric field in a structure and thus result in a local enhancement of the edge emission intensity.

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Metalorganic chemical vapor deposition (MOCVD) GaSb growth using trimethylgallium and trimethylantimony as a function of substrate temperature and V/III ratio was examined. These parameters were found to have a significant effect on the growth rate and surface morphology of the GaSb films. A phase diagram is used to interpret the effect of these growth parameters on the GaSb film growth. The region of single-phase growth was found to be narrow, falling between 540 and 560 °C. The optimum growth conditions for the MOCVD growth of GaSb have been determined for a TMGa flow rate of 20 sccm and a carrier gas flow of 8 l/min. The optimum substrate temperature and V/III ratio were found to be 540 °C and 0.72, respectively. In these conditions the lowest hole concentration of 5 × 1016 cm-3 and the highest room temperature mobility of 500 cm2 V-1 s-1 were achieved, accompanied by a steep, well-resolved band edge at 0.72 eV.

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

Traditionally, control algorithms for Terfenol-D® magnetostrictive actuators have modelled the strain as a linear function of magnetic field and stress, but nonlinearity becomes important for strains of more than a few hundred parts per million (ppm), and for many applications even the maximum strain, about 1500 ppm, is inadequate. Larger strokes can be obtained by various types of stroke amplifiers, by resonant operation, or by inchworming. Previously, SatCon successfully used a 10:1 lever arm stroke amplifier in a helicopter flap actuator [1]. Current projects include a water pump using a hydraulic stroke amplifier, which potentially could be more compact and efficient than a lever arm amplifier, and linear and rotary inchworm motors for robotics. In all these designs, satisfactory performance requires careful attention to machining tolerances and to making the mechanisms and housing stiff enough or compliant enough. A model for inchworm motors has been developed, including finite load and resonant effects. Nonlinear control algorithms will be discussed, applicable to arbitrarily large Terfenol-D® strains, stresses, and magnetic fields.