To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure no-reply@cambridge.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
The crystal structure of anthraquinone-2-carboxylic acid has been solved and refined using synchrotron X-ray powder diffraction data, and optimized using density functional theory techniques. Anthraquinone-2-carboxylic acid crystallizes in space group P-1 (#2) with a = 3.7942(2), b = 13.266(5), c = 22.835(15) Å, α = 73.355(30), β = 89.486(6), γ = 86.061(1)°, V = 1098.50(7) Å3, and Z = 4. The crystal structure contains two independent molecules of anthraquinone-2-carboxylic acid. Although the expected hydrogen-bonded dimers are present, the dimers are not centrosymmetric. The dimer contains one molecule of each planar low-energy conformation. The crystal structure consists of a herringbone array of centrosymmetric pairs of molecules parallel to the bc-plane. The molecules stack along the short a-axis. The powder pattern has been submitted to ICDD® for inclusion in the Powder Diffraction File™ (PDF®).
The seed coat of tobacco displays an intriguing cellular pattern characterised by puzzle-like shapes whose specific function is unknown. Here, we perform a detailed investigation of the structure of tobacco seeds by electron microscopy and then follow the germination process by time lapse optical microscopy. We use particle image velocimetry to reveal the local deformation fields and perform compression experiments to study the mechanical properties of the seeds as a function of their hydration. To understand the mechanical role of the observed coat structure, we perform finite element calculations comparing structure with puzzle-shaped cells with similar structures lacking re-entrant features. The results indicate that puzzle-shaped cells act as stress suppressors and reduce the Poisson’s ratio of the seed coat structure. We thus conclude that the peculiar cellular structure of these seed coats serves a mechanical purpose that could be relevant to control germination.
Artificial intelligence (AI) has always drawn inspiration from the brain, from its most basic forms like nodes and layers to more recent advances that mimic individual neurons and various aspects of visual and sensory processing.
The dynamic charge density of KZnB3O6, which contains edge-sharing BO4 units, has been characterized using laboratory and synchrotron X-ray diffraction techniques. The experimental electron density distribution (EDD) was constructed using the maximum-entropy method (MEM) from single crystal diffraction data obtained at 81 and 298 K. Additionally, MEM-based pattern fitting (MPF) method was employed to refine the synchrotron powder diffraction data obtained at 100 K. Both the room-temperature single crystal diffraction data and the cryogenic synchrotron powder diffraction data reveal an intriguing phenomenon: the edge-shared B2O2 ring exhibits a significant charge density accumulation between the O atoms. Further analysis of high-quality single crystal diffraction data collected at 81 K, with both high resolution and large signal-to-noise ratio, reveals no direct O–O bonding within the B2O2 ring. The experimental EDD of KZnB3O6 obtained aligns with the results obtained from ab-initio calculations. Our work underscores the importance of obtaining high-quality experimental data to accurately determine EDDs.
The crystal structure of anhydrous Al-MFI (NH4) containing adsorbed Ar has been determined and refined using synchrotron X-ray powder diffraction data taken at 90 K, and optimized using density functional theory techniques. Six highly occupied Ar sites almost completely fill the pore volume of the zeolite. Changing the gas flow from Ar to He at 90 K decreases the Ar occupancies of all six sites, but two decrease more than the others. Warming the sample from 90 to 295 K in Ar flow results in further decreases in site occupancies, but five of the original six sites persist.
Biocalcification is a naturally occurring mineralisation phenomenon resulting from the urease produced by microorganisms inhabiting soil environments. This process, often referred to as microbially induced calcite precipitation (MICP), is primarily exploited in an engineering context for soil stabilisation and the repair of concrete structures. MICP represents an emerging area of research in architecture and design. In this paper, we discuss the appropriation of MICP on Papier Plume, a foam made of paper waste used in the context of ImpressioVivo: a design-led research project exploring the conception and fabrication of 3D-printed and bacterially induced bio-sourced materials for a circular design framework. In the light of a previous study based on two strategies of calcification: (1) direct inoculation (2) spraying, we – a team of two designers and a microbiologist – discuss the relevance of an immersion strategy applied to the dry paper foam substrate. By doing so, we reflect on the relevance of MICP as a material design process underpinned by sustainable and circularity concerns, from a design perspective, but also into an attempt to embrace the perspective of the bacteria supporting these experiments; namely Sporosarcina pasteurii.
Neural networks are vulnerable to adversarial perturbations: slight changes to inputs that can result in unexpected outputs. In neural network control systems, these inputs are often noisy sensor readings. In such settings, natural sensor noise – or an adversary who can manipulate them – may cause the system to fail. In this paper, we introduce the first technique to provably compute the minimum magnitude of sensor noise that can cause a neural network control system to violate a safety property from a given initial state. Our algorithm constructs a tree of possible successors with increasing noise until a specification is violated. We build on open-loop neural network verification methods to determine the least amount of noise that could change actions at each step of a closed-loop execution. We prove that this method identifies the unsafe trajectory with the least noise that leads to a safety violation. We evaluate our method on four systems: the Cart Pole and LunarLander environments from OpenAI gym, an aircraft collision avoidance system based on a neural network compression of ACAS Xu, and the SafeRL Aircraft Rejoin scenario. Our analysis produces unsafe trajectories where deviations under $1{\rm{\% }}$ of the sensor noise range make the systems behave erroneously.
Intelligent electromagnetic (EM) sensing is a powerful contactless examination tool in science, engineering and military, enabling us to 'see' and 'understand' visually invisible targets. Using intelligence, the sensor can organize by itself the task-oriented sensing pipeline (data acquisition plus processing) without human intervention. Intelligent metasurface sensors, synergizing ultrathin artificial materials (AMs) for flexible wave manipulation and artificial intelligences (AIs) for powerful data manipulation, emerge in response to the proper time and conditions, and have attracted growing interest over the past years. The authors expect that the results in this Element could be utilized to achieve the goal that conventional sensors cannot achieve, and that the developed strategies can be extended over the entire EM spectra and beyond, which will produce important impacts on the society of the robot-human alliance.
Self-sealing is becoming a necessary function in sustainable systems for enhancing materials lifetime and improving system resilience. In this context, plants are prime models as they have developed various concepts. Moreover, implementing self-sealing into engineering applications is becoming more feasible with the advent of programmable materials. That is because these materials are able to implement simple algorithms by locally and globally processing information and adapting to changing conditions. However, the transfer of bio-inspired system functions into technological applications is tedious. It requires an intimate understanding of the selected biological models and the technological problem. To support the transfer of concepts and principles, we propose easy-to-read flow charts as a common language for biologists and engineers. Describing the functions of biological models and their underlying functional principles as process flow diagrams, allows to convert detailed biological insights into sequential step-wise algorithms, which turns the focus on building blocks necessary to achieve specific functions. We present a first set of flow charts for selected plant models exhibiting different self-sealing mechanisms based on hydraulics, mechanical instabilities, and sap release. For these plant-inspired control flows, we identified technical statements to classify metamaterial mechanisms and unit cells, which represent possible solutions for the steps in the algorithms for sealing procedures in future technical applications. A common language of flow charts will simplify the transfer of functional principles found in plant models into technological applications. Programmable materials expand the available design space of materials, putting us within reach to implement self-sealing functions inspired by plants.
Master fundamental technologies for modern semiconductor integrated circuits with this definitive textbook. It includes an early introduction of a state-of-the-art CMOS process flow, exposes students to big-picture thinking from the outset, and encourages a practical integration mindset. Extensive use of process and TCAD simulation, using industry tools such as Silvaco Athena and Victory Process, provides students with deeper insight into physical principles, and prepares them for applying these tools in a real-world setting. Accessible framing assumes only a basic background in chemistry, physics and mathematics, providing a gentle introduction for students from a wide range of backgrounds; and over 450 figures (many in color), and more than 280 end-of-chapter problems, will support and cement student understanding. Accompanied by lecture slides and solutions for instructors, this is the ideal introduction to semiconductor technology for senior undergraduate and graduate students in electrical engineering, materials science and physics, and for semiconductor engineering professionals seeking an authoritative introductory reference.
The field of research related to CO2 capture is significant and really attractive for sustainable green chemistry. Focusing attention on this topic in our research led to obtaining new compounds based on diamines. As a result of the syntheses carried out using aqueous solutions of diamines exposed to the slow action of carbon dioxide from the air, three new monocarbamates were obtained. X-ray powder diffraction data for the obtained compounds: 12-propCO2 (C4H10N2O2) [a = 9.3033(7), b = 9.2485(7), c = 7.4735(7) Å, β = 111.214(7)°, V = 599.46 Å3, Z = 4, space group Ia]; 13-propCO2 (C4H10N2O2) [a = 5.0065(10), b = 12.2093(23), c = 4.9006(10) Å, β = 96.457(18)°, V = 297.65 Å3, Z = 2, space group P21]; and 13-dytekCO2 (C6H14N2O2) [a = 28.374(3), c = 5.1726(9) Å, V = 3606.53 Å3, Z = 18, space group $R\bar{3}$] are reported in this paper.
As we have seen throughout this book, material deposition and material removal are critical steps in integrated circuit (IC) fabrication. A wide variety of materials, insulators, semiconductors and conductors must be deposited at various stages in chip manufacturing. Usually, these materials are deposited in blanket form covering the entire wafer surface, although there are some deposition methods which are selective and deposit materials only in specific locations on the wafer surface. We will discuss deposition methods in detail in Chapter 10. Selective removal of material is usually accomplished using a lithography-defined mask followed by etching. We will discuss a variety of etching methods in this chapter.
Material removal can also be accomplished using chemical–mechanical polishing (CMP). This process is usually not selective but uses a combination of chemical etching and mechanical polishing to remove materials. The original motivation for developing CMP was to planarize wafer surfaces in back-end structures, since the polishing produces a flat surface.
Multiple deposited layers make up the core of almost all devices, whether micro-electromechanical systems (MEMS) or semiconductor circuits. Successive layers are deposited, patterned and etched to form the complex stacked structures that provide the desired functionality. The range of deposition techniques used varies widely even if we consider a single specific process, such as building a complementary metal-oxide–semiconductor (CMOS) chip. The toolbox of deposition systems is extensive, providing interesting choices for process designers. To provide some structure to this chapter, we divide deposition systems by their thermal profiles, from high-temperature to low-temperature systems, as this often determines their utility at a particular step in a process. It has the advantage of mimicking the historical development, but process engineers use the entire spectrum of systems from the deposition toolbox to develop a novel process.
Almost from the very beginning, it was clear that silicon was the best choice for the material on which to base the integrated circuit (IC) industry. The abundance of silicon, the availability of simple techniques for refining it and growing single crystals, the essentially ideal properties of the Si/SiO2 interface and the invention of manufacturing techniques based on the planar process, all led to the dominance of silicon-based devices by the early 1960s.
However, while silicon has dominated this $500 billion industry, other semiconductors have found markets where they outperform silicon or do things that silicon simply cannot do. The compound semiconductor market today is worth approximately $15 billion, dominated by GaAs devices that operate at higher frequencies than Si devices. SiC and GaN are opening multi-billion-dollar market opportunities in power devices. Light-emitting diodes (LEDs) for general lighting and other displays are a $15 billion market today.